Patents by Inventor Masatoshi Hase

Masatoshi Hase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10389307
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: August 20, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Patent number: 10326481
    Abstract: A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: June 18, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Publication number: 20190097590
    Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
    Type: Application
    Filed: November 27, 2018
    Publication date: March 28, 2019
    Inventor: Masatoshi HASE
  • Publication number: 20190089307
    Abstract: A power amplifier circuit includes an amplifier that receives an input signal with an alternating current and outputs an output signal obtained by amplifying power of the input signal to a first node; an inductive element that is connected between the first node and a second node; and a variable capacitor that is connected between the second node and a reference potential, and whose electrostatic capacitance increases as power of the output signal increases.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 21, 2019
    Inventors: Satoshi Tanaka, Masatoshi Hase, Norio Hayashi, Kazuo Watanabe, Yuuri Honda
  • Publication number: 20190052233
    Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventor: Masatoshi HASE
  • Patent number: 10177724
    Abstract: A power amplifier circuit includes first and second transistors and a first voltage output circuit. A radio frequency signal is input into a base of the first transistor. The first voltage output circuit outputs a first voltage in accordance with a power supply voltage. The first voltage is supplied to a base or a gate of the second transistor. An emitter or a source of the second transistor is connected to a collector of the first transistor. A first amplified signal generated by amplifying the radio frequency signal is output from a collector or a drain of the second transistor.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: January 8, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Kazuo Watanabe, Takayuki Tsutsui, Masao Kondo, Satoshi Arayashiki, Fumio Harima, Masatoshi Hase
  • Patent number: 10171044
    Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: January 1, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Patent number: 10135403
    Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: November 20, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Patent number: 10135395
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: November 20, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Publication number: 20180287562
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Application
    Filed: June 6, 2018
    Publication date: October 4, 2018
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Patent number: 10050647
    Abstract: A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: August 14, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Publication number: 20180226922
    Abstract: A power amplifier module includes a combining circuit including a combiner. The combining circuit further includes a first inductor connected in series between an output terminal of a first amplifier and the combiner, a second inductor connected in series between an output terminal of a second amplifier and the combiner, and a second capacitor having an end connected to the combiner and another end grounded. A phase of a third signal from the output terminal of the first amplifier to the second amplifier through the combiner is delayed by about 45 degrees in the first inductor and the second capacitor, and is delayed by about 45 degrees in the second inductor and the second capacitor. A phase of the third signal from the output terminal of the first amplifier to the second amplifier through the first capacitor is advanced by about 90 degrees.
    Type: Application
    Filed: January 15, 2018
    Publication date: August 9, 2018
    Inventor: Masatoshi HASE
  • Publication number: 20180152143
    Abstract: A power amplifier circuit includes a first transistor, a second transistor, a first bias circuit supplying a first bias current or voltage, a second bias circuit supplying a second bias current or voltage, a first inductor, and a first capacitor. A power supply voltage is supplied to a collector of the first transistor, and an emitter thereof is grounded. A radio frequency signal and the first bias current or voltage are supplied to a base of the first transistor. The power supply voltage is supplied to a collector of the second transistor, and an emitter thereof is connected to the collector of the first transistor via the first capacitor and is grounded via the first inductor. The second bias current or voltage is supplied to a base of the second transistor. An amplified radio frequency signal is output from the collector of the second transistor.
    Type: Application
    Filed: November 22, 2017
    Publication date: May 31, 2018
    Inventors: Satoshi Tanaka, Masatoshi Hase, Yuri Honda, Kazuo Watanabe, Takashi Soga
  • Publication number: 20180152145
    Abstract: Provided is a power amplification circuit that includes: a first transistor that has an emitter to which a first radio frequency signal is supplied, a base to which a first DC control current or DC control voltage is supplied and a collector that outputs a first output signal that corresponds to the first radio frequency signal; a first amplifier that amplifies the first output signal and outputs a first amplified signal; and a first control circuit that supplies the first DC control current or DC control voltage to the base of the first transistor in order to control output of the first output signal.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Inventor: Masatoshi Hase
  • Patent number: 9917550
    Abstract: Provided is a power amplification circuit that includes: a first transistor that has an emitter to which a first radio frequency signal is supplied, a base to which a first DC control current or DC control voltage is supplied and a collector that outputs a first output signal that corresponds to the first radio frequency signal; a first amplifier that amplifies the first output signal and outputs a first amplified signal; and a first control circuit that supplies the first DC control current or DC control voltage to the base of the first transistor in order to control output of the first output signal.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: March 13, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Publication number: 20170359038
    Abstract: A power amplifier circuit includes first and second transistors and a first voltage output circuit. A radio frequency signal is input into a base of the first transistor. The first voltage output circuit outputs a first voltage in accordance with a power supply voltage. The first voltage is supplied to a base or a gate of the second transistor. An emitter or a source of the second transistor is connected to a collector of the first transistor. A first amplified signal generated by amplifying the radio frequency signal is output from a collector or a drain of the second transistor.
    Type: Application
    Filed: May 22, 2017
    Publication date: December 14, 2017
    Inventors: Satoshi TANAKA, Kazuo WATANABE, Takayuki TSUTSUI, Masao KONDO, Satoshi ARAYASHIKI, Fumio HARIMA, Masatoshi HASE
  • Publication number: 20170310286
    Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Inventor: Masatoshi Hase
  • Publication number: 20170279413
    Abstract: Provided is a power amplification circuit that includes: a first transistor that has an emitter to which a first radio frequency signal is supplied, a base to which a first DC control current or DC control voltage is supplied and a collector that outputs a first output signal that corresponds to the first radio frequency signal; a first amplifier that amplifies the first output signal and outputs a first amplified signal; and a first control circuit that supplies the first DC control current or DC control voltage to the base of the first transistor in order to control output of the first output signal.
    Type: Application
    Filed: December 16, 2016
    Publication date: September 28, 2017
    Inventor: Masatoshi Hase
  • Patent number: 9735744
    Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: August 15, 2017
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masatoshi Hase
  • Publication number: 20170230013
    Abstract: A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.
    Type: Application
    Filed: February 1, 2017
    Publication date: August 10, 2017
    Inventor: Masatoshi Hase