Patents by Inventor Masatoshi Ikeda

Masatoshi Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200209184
    Abstract: A gas sensor element includes a solid electrolyte body having oxygen ion conductivity, a measurement electrode provided on one surface of the solid electrolyte body and exposed to a measurement gas, and a reference electrode provided on the other surface of the solid electrolyte body and exposed to a reference gas. Both the measurement electrode and the reference electrode include noble metal particles, solid electrolyte particles having oxygen ion conductivity, and pores. The measurement electrode comprises a surface measurement electrode layer comprising a surface serving as a contact surface with the measurement gas and an intermediate measurement electrode layer disposed in contact with a surface at solid electrolyte body side of the surface measurement electrode layer. The surface measurement electrode layer has a higher porosity than the intermediate measurement electrode layer has. The gas sensor comprises the gas sensor element.
    Type: Application
    Filed: March 10, 2020
    Publication date: July 2, 2020
    Inventors: Masatoshi IKEDA, Shota HAGINO, Chika NAMEKATA
  • Publication number: 20200141896
    Abstract: A gas sensor element includes a solid electrolyte having oxygen-ion conductivity, a first electrode film located on one side of the solid electrolyte, a second electrode film located on the other side of the solid electrolyte. At least one of the first electrode film and the second electrode film includes noble metal particles, solid electrolyte particles having oxygen-ion conductivity, and pores, and a capacitance in the electrode film is 80 ?F or less. A gas sensor includes the gas sensor element.
    Type: Application
    Filed: January 7, 2020
    Publication date: May 7, 2020
    Inventors: Chika NAMEKATA, Yasufumi SUZUKI, Makoto ITO, Masatoshi IKEDA, Shota HAGINO
  • Publication number: 20200064303
    Abstract: In a gas sensor element, an electrolyte layer has a solid electrolyte body having oxygen ionic conductivity. A first insulation body is stacked at a first surface side of the electrolyte layer. A second insulation body is stacked at a second surface side of the electrolyte layer. A measurement gas chamber is surrounded by the electrolyte layer and the first insulation body, into which a detection target gas is introduced. A reference gas chamber is surrounded by the electrolyte layer and the second insulation body, into which a reference gas is introduced. A heater is embedded in the first insulation body. The second insulation body has a low thermal conductivity part having a thermal conductivity which is lower than a thermal conductivity of a heater embedded part formed in the first insulation body in which the heater is embedded.
    Type: Application
    Filed: August 22, 2019
    Publication date: February 27, 2020
    Inventors: Masatoshi IKEDA, Shota HAGINO, Makoto ITO, Daisuke KAWAI
  • Publication number: 20190391109
    Abstract: A gas sensor is equipped with a sensor device made of a stack of a solid electrolyte body, a sensor electrode, a reference electrode, a first insulator, a second insulator, a gas chamber, a reference gas duct, a heater, and a heat transfer member. The heater has a heating element at least partially overlapping the sensor electrode and the reference electrode. The heat transfer member is made of a dense metallic oxide material which blocks passage of measurement gas therethrough. The heat transfer member is held between the sensor electrode and the first insulator in which the heater is embedded within the gas chamber and works to facilitate transfer of thermal energy, as generated by the heater, to the solid electrolyte body, the sensor electrode, and the reference electrode. This results in enhanced thermal conductivity of the sensor device and achieves quick activation of the sensor device.
    Type: Application
    Filed: June 25, 2019
    Publication date: December 26, 2019
    Inventors: Shota HAGINO, Masatoshi IKEDA, Makoto ITO, Zhenzhou SU, Hao WU, Takashi HIRAYAMA, Daisuke KAWAI, Satoshi NAKAMURA
  • Patent number: 10480083
    Abstract: The objective of the present invention is to provide a steam electrolysis cell of which current efficiency is high and by which hydrogen can be efficiently produced, and a method for producing hydrogen using the steam electrolysis cell. The steam electrolysis cell according to the present invention is characterized in comprising an anode layer, a cathode layer, and a proton conducting oxide electrolyte layer between the anode layer and the cathode layer, wherein the anode layer comprises a perovskite oxide, and the perovskite oxide comprises Ba and Co.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: November 19, 2019
    Assignee: NIPPON SHOKUBAI CO., LTD.
    Inventors: Kuninori Miyazaki, Masatoshi Ikeda
  • Publication number: 20190049404
    Abstract: A gas sensor element includes a solid electrolyte plate, and a measurement electrode and a reference electrode provided on surfaces of the solid electrolyte plate. In a section plane of the reference electrode along a thickness direction, noble metal regions, solid electrolyte regions, mixed regions, and void spaces are present. When a ratio of an area B of the mixed regions in the section plane with respect to an area A of the reference electrode in the section plane is a mixed region ratio B/A, and a ratio of an area C of the void spaces in the section plane with respect to the area A of the reference electrode in the section plane is a void space ratio C/A, a parameter value as a product of the mixed region ratio B/A and the void space ratio C/A falls within a range of 0.001 to 0.01.
    Type: Application
    Filed: December 14, 2016
    Publication date: February 14, 2019
    Inventors: Masatoshi IKEDA, Makoto ITO
  • Patent number: 10131545
    Abstract: A method which can efficiently produce ammonia at low temperature and low pressure and which can respond flexibly to an unsteady electrical power supply condition. In addition, a catalyst which is excellent in activity for synthesizing ammonia and which is used in a method for efficiently producing ammonia without regard to supply condition and supply location of electrical power. The method is characterized in that a reactor for synthesizing ammonia is used, and the reactor has a pair of electrodes, a voltage applying means for applying voltage between the electrodes, a catalyst between the electrodes, a raw material gas inlet port, and an ammonia-containing gas discharge port, and including introducing at least nitrogen and hydrogen as a raw material gas into the reactor for synthesizing ammonia, and applying a voltage to the electrodes of the reactor for synthesizing ammonia, wherein electrical discharge does not occur by the voltage.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: November 20, 2018
    Assignee: NIPPON SHOKUBAI CO., LTD.
    Inventors: Yasushi Sekine, Hideaki Tsuneki, Masatoshi Ikeda
  • Publication number: 20170211193
    Abstract: The objective of the present invention is to provide a steam electrolysis cell of which current efficiency is high and by which hydrogen can be efficiently produced, and a method for producing hydrogen using the steam electrolysis cell. The steam electrolysis cell according to the present invention is characterized in comprising an anode layer, a cathode layer, and a proton conducting oxide electrolyte layer between the anode layer and the cathode layer, wherein the anode layer comprises a perovskite oxide, and the perovskite oxide comprises Ba and Co.
    Type: Application
    Filed: May 20, 2015
    Publication date: July 27, 2017
    Applicant: NIPPON SHOKUBAI CO., LTD.
    Inventors: Kuninori MIYAZAKI, Masatoshi IKEDA
  • Publication number: 20150353369
    Abstract: The objective of the present invention is to provide a method which can efficiently produce ammonia at low temperature and low pressure and which can respond flexibly to an unsteady electrical power supply condition. In addition, the objective of the present invention is to provide a catalyst which is excellent in activity for synthesizing ammonia and which is used in a method for efficiently producing ammonia without regard to supply condition and supply location of electrical power.
    Type: Application
    Filed: January 9, 2014
    Publication date: December 10, 2015
    Inventors: Yasushi SEKINE, Hideaki TSUNEKI, Masatoshi IKEDA
  • Patent number: 9207202
    Abstract: A gas sensor element has a solid electrolyte of an oxygen ion conductivity, a target gas electrode formed on one surface of the solid electrolyte, a reference gas electrode formed on the other surface of the solid electrolyte, a porous diffusion resistance layer through which the target gas passes to reach the target gas electrode, and a catalyst layer formed on an outer surface of the porous diffusion resistance layer. The target gas electrode is formed around the porous diffusion resistance layer. The catalyst layer contains noble metal catalysts. The noble metal catalysts contain at least rhodium and palladium. A content of rhodium is not less than 10 mass % and a content of palladium is not less than 20 mass % to the entire of the noble metal catalysts.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: December 8, 2015
    Assignees: DENSO CORPORATION, NIPPON SOKEN, INC.
    Inventors: Yasufumi Suzuki, Masatoshi Ikeda
  • Patent number: 8506359
    Abstract: A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: August 13, 2013
    Assignee: JSR Corporation
    Inventors: Hirotaka Shida, Takafumi Shimizu, Masatoshi Ikeda, Shou Kubouchi, Yousuke Shibata, Kazuhito Uchikura, Akihiro Takemura
  • Publication number: 20130005874
    Abstract: The present invention relates to a pigment composition containing a) a pigment, and b) a polyvinyl alcohol/acrylic acid/methyl methacrylate copolymer or an aminoalkyl methacrylate copolymer, and such pigment composition is available in the use for drug medicines and the like, and exhibits better dispersibility.
    Type: Application
    Filed: March 14, 2011
    Publication date: January 3, 2013
    Applicant: TAISHO PHARMACEUTICAL CO., LTD
    Inventors: Toshiki Nakajima, Masakiyo Urabe, Mariko Numao, Masatoshi Ikeda, Kenji Yamabe
  • Patent number: 8309263
    Abstract: A fuel cell assembly has a housing defining an electricity generation/combustion chamber, and electricity generation/combustion means disposed within the housing. A fuel gas and an oxygen-containing gas are supplied to the electricity generation/combustion means, and a combustion gas formed within the electricity generation/combustion chamber is discharged from the electricity generation/combustion chamber. A heat exchanger having a first channel and a second channel is disposed on at least one surface of the housing, the combustion gas is discharged from the interior of the electricity generation/combustion chamber through the first channel of the heat exchanger, and one of the oxygen-containing gas and the fuel gas is supplied to the electricity generation/combustion means through the second channel of the heat exchanger.
    Type: Grant
    Filed: January 6, 2009
    Date of Patent: November 13, 2012
    Assignee: Kyocera Corporation
    Inventors: Takashi Ono, Naruto Takahashi, Masatoshi Ikeda, Kazumasa Maruya, Michiaki Nishimura
  • Patent number: 8304809
    Abstract: In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: November 6, 2012
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Shusuke Kaya, Seikoh Yoshida, Masatoshi Ikeda, legal representative, Sadahiro Kato, Takehiko Nomura, Nariaki Ikeda, Masayuki Iwami, Yoshihiro Sato, Hiroshi Kambayashi, Koh Li
  • Patent number: 8178898
    Abstract: A GaN-based semiconductor element includes a substrate, a buffer layer formed on the substrate, including an electrically conductive portion, an epitaxial layer formed on the buffer layer, and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: May 15, 2012
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Nariaki Ikeda, Seikoh Yoshida, Masatoshi Ikeda, legal representative
  • Patent number: 8004161
    Abstract: A multilayered piezoelectric element and a method of producing the multilayered piezoelectric element are disclosed. The multilayered piezoelectric element is made of piezoelectric ceramic layers and electrode formation layers which are alternately laminated. The piezoelectric ceramic layers are made of crystal oriented ceramic as polycrystalline material. The crystal oriented ceramic is made mainly of an isotropic perovskite type compound in which the specific {100} crystal plane of each of crystal grains that form the polycrystalline material is oriented. The electrode formation layers have electrode parts forming inner electrodes containing a conductive metal. The isotropic perovskite type compound is expressed by a general formula (1): [Agh{Lix(K1-yNay)1-x}1-h]j(Nb1-z-wTazSbw)O3-k ??(1), where 0?x?0.2, 0?y?1, 0?z?0.4, 0?w?0.2, x+z+w>0, 0<h?0.05, 0.94?j?1, and 0?k?0.5).
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: August 23, 2011
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Toshiatsu Nagaya, Kouji Noda, Masatoshi Ikeda, Masaya Nakamura, Daisuke Shibata
  • Patent number: 7998848
    Abstract: The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: August 16, 2011
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Yuki Niiyama, Seikoh Yoshida, Masatoshi Ikeda, legal representative, Hiroshi Kambayashi, Takehiko Nomura
  • Publication number: 20110139619
    Abstract: A noble metal catalyst powder produced by using co-precipitation method is made of noble metal alloy particles containing Pa, Pd, and Rh. The noble metal alloy particles have an average particle size within a range of 0.2 ?m to 2.0 ?m. A standard deviation in content of each of Pa, Pd, and Rh is not more than 20 mass %. This standard deviation in content of each of Pa, Pd, and Rh is detected at not less than ten detection-points of the noble metal catalyst powder by quantitative elemental analysis. A gas sensor element has the noble metal catalyst powder. An A/F sensor is equipped with the gas sensor element using the noble metal catalyst powder.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 16, 2011
    Applicants: NIPPON SOKEN, INC., DENSO CORPORATION
    Inventors: Masatoshi IKEDA, Yasufumi Suzuki, Hiroshi Matsuoka
  • Publication number: 20110081780
    Abstract: A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021/g.
    Type: Application
    Filed: February 13, 2009
    Publication date: April 7, 2011
    Applicant: JSR CORPORATION
    Inventors: Hirotaka Shida, Takafumi Shimizu, Masatoshi Ikeda, Shou Kubouchi, Yousuke Shibata, Michiaki Andou, Kazuhito Uchikura, Akihiro Takemura
  • Publication number: 20110053462
    Abstract: A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.
    Type: Application
    Filed: January 16, 2009
    Publication date: March 3, 2011
    Applicant: JSR CORPORATION
    Inventors: Hirotaka Shida, Takafumi Shimizu, Masatoshi Ikeda, Shou Kubouchi, Yousuke Shibata, Kazuhito Uchikura, Akihiro Takemura