Patents by Inventor Masatoshi Miyake
Masatoshi Miyake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220246302Abstract: An object of the invention is to harmonize prediction accuracy and an analysis time of an ensemble model. Therefore, when performing data analysis using an ensemble model 300 that makes an inference by integrating inferences by first to n-th models, an i-th model (1?i?n) constituting the ensemble model 300 is selected from an i-th model group of the model data, at least one model group of the first to n-th model groups includes a plurality of models, and the first to n-th models capable of constituting an ensemble model satisfying a performance requirement for data analysis and a constraint requirement for time required for the data analysis are selected from the first to n-th model groups 301 to 303.Type: ApplicationFiled: June 22, 2020Publication date: August 4, 2022Applicant: Hitachi High-Tech CorporationInventors: Daisuke FUKUI, Hiromitsu NAKAGAWA, Takeshi TANAKA, Yuko SANO, Masatoshi MIYAKE, Nobuya HORIKOSHI
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Publication number: 20210244317Abstract: To provide a walking mode display method, a walking mode display system and a walking mode analyzer each of which allows for analysis of a walking mode of a user and display thereof in an easily understandable manner. The walking mode display method includes: selecting measurement of a walker and measurement of a reference walker to be compared with the walker; displaying a first walking model that displays a walking for one walking step of the walker as an animation; displaying a second walking model that displays a walking for one walking step of the reference walker as the animation; and displaying a magnitude of predetermined feature amount data related to the measurement of the walker and the magnitude of predetermined feature amount data related to the measurement of the reference walker in a comparable manner.Type: ApplicationFiled: April 15, 2019Publication date: August 12, 2021Applicant: HITACHI HIGH-TECH CORPORATIONInventors: Daisuke FUKUI, Masashi EGI, Hiromitsu NAKAGAWA, Takeshi TANAKA, Masatoshi MIYAKE, Takashi ONO, Nobuya HORIKOSHI, Minori NOGUCHI
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Patent number: 10418224Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.Type: GrantFiled: April 12, 2018Date of Patent: September 17, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
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Publication number: 20180233329Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.Type: ApplicationFiled: April 12, 2018Publication date: August 16, 2018Inventors: Naoyuki KOFUJI, Ken'etsu YOKOGAWA, Nobuyuki NEGISHI, Masami KAMIBAYASHI, Masatoshi MIYAKE
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Patent number: 9960014Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.Type: GrantFiled: December 6, 2016Date of Patent: May 1, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
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Publication number: 20170084430Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.Type: ApplicationFiled: December 6, 2016Publication date: March 23, 2017Inventors: Naoyuki KOFUJI, Ken'etsu YOKOGAWA, Nobuyuki NEGISHI, Masami KAMIBAYASHI, Masatoshi MIYAKE
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Patent number: 9490104Abstract: Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher. The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.Type: GrantFiled: July 17, 2012Date of Patent: November 8, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ken'etsu Yokogawa, Masatoshi Miyake, Takashi Uemura, Masaru Izawa, Satoshi Sakai
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Patent number: 9271341Abstract: Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.Type: GrantFiled: November 29, 2010Date of Patent: February 23, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ken'etsu Yokogawa, Masatoshi Miyake
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Publication number: 20150156856Abstract: A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode.Type: ApplicationFiled: November 25, 2014Publication date: June 4, 2015Inventors: Masatoshi MIYAKE, Kenetsu YOKOGAWA, Takashi UEMURA, Hiromichi KAWASAKI
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Publication number: 20140305915Abstract: A heat treatment apparatus, for enabling stable plasma discharge, with preventing desorption of silicon from silicon carbonite suppressing an amount of discharge of thermions therefrom, comprises a treatment chamber for heating a heating sample therein, a plate-shaped upper electrode, being disposed in the treatment chamber, a plate-shaped lower electrode, facing to the upper electrode and for producing plasma between the upper electrode, and a gas supplying means for supplying a gas into the treatment chamber, wherein the upper electrode and the lower electrode are made of a base material of silicon carbonite, and each being covered by a carbon film around thereof.Type: ApplicationFiled: February 17, 2014Publication date: October 16, 2014Inventors: Masatoshi Miyake, Hiromichi Kawasaki, Ken'etsu Yokogawa, Takashi Uemura
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Patent number: 8809727Abstract: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.Type: GrantFiled: May 12, 2011Date of Patent: August 19, 2014Assignee: Hitachi High-Technologies CorporationInventors: Ken'etsu Yokogawa, Masatoshi Miyake
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Publication number: 20140202995Abstract: A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber 100 for heat the sample 101 to be treated therein, a first electrode 102, which is disposed within the treatment chamber, a plate-shaped second electrode 103, which is disposed opposing to the first electrode 102, a radio-frequency power supply 111 for supplying radio-frequency electric power to the first electrode 102 or the second electrode 103, and a gas introducing means 113 for supplying a gas within the treatment chamber, wherein the first electrode 102 has an opening portion therein.Type: ApplicationFiled: August 1, 2013Publication date: July 24, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Masatoshi MIYAKE, Ken'etsu YOKOGAWA, Takashi UEMURA, Hiromichi KAWASAKI
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Publication number: 20140008352Abstract: In order to provide a heat treatment apparatus that is high in thermal efficiency, and can reduce a surface roughness of a specimen surface even when a specimen is heated at 1200° C. or higher, in a heat treatment apparatus that conducts a heat treatment by the aid of plasma, a heat treatment chamber includes a heating plate that heats a specimen by the aid of the plasma, and an electrode that is applied with a plasma generation radio-frequency power. The heating plate includes a beam, and is connected to the heat treatment chamber through the beam and the thermal expansion absorption member, and the thermal expansion absorption member has an elastic member.Type: ApplicationFiled: June 27, 2013Publication date: January 9, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Takashi UEMURA, Ken'etsu YOKOGAWA, Masatoshi MIYAKE, Hiromichi KAWASAKI
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Patent number: 8569647Abstract: Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200 ° C. or more. A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.Type: GrantFiled: July 19, 2011Date of Patent: October 29, 2013Assignee: Hitachi High-Technologies CorporationInventors: Masatoshi Miyake, Ken'etsu Yokogawa
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Publication number: 20130277354Abstract: There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.Type: ApplicationFiled: August 10, 2012Publication date: October 24, 2013Inventors: Masatoshi Miyake, Ken'etsu Yokogawa, Takashi Uemura, Masaru Izawa, Satoshi Sakai
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Publication number: 20130112670Abstract: Provided is a heat treatment apparatus that is high in thermal efficiency and can reduce surface roughness of a substrate to be treated even when a specimen is heated at 1200° C. or higher. The heat treatment apparatus heating the specimen includes a heating plate heated by plasma formed in an area of a gap to heat the specimen.Type: ApplicationFiled: July 17, 2012Publication date: May 9, 2013Inventors: Ken'etsu YOKOGAWA, Masatoshi Miyake, Takashi Uemura, Masaru Izawa, Satoshi Sakai
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Publication number: 20130112669Abstract: The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.Type: ApplicationFiled: January 20, 2012Publication date: May 9, 2013Inventors: Takashi UEMURA, Kenetsu Yokogawa, Masatoshi Miyake, Masaru Izawa, Satoshi Sakai
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Publication number: 20130087285Abstract: A plasma etching apparatus of an electrodeless system can uniformize a radical density, and improve the uniformity of etching. The plasma etching apparatus of the electrodeless system includes a decompression chamber, a gas supply mechanism, a dielectric window, a plasma generation unit, a stage on which a sample is placed, and a first RF power supply connected to the stage. The plasma etching apparatus further includes a gas introduction mechanism for supplying a second gas, and a second RF power supply for inputting a RF power that allows radicals to be generated in an outer periphery of the sample.Type: ApplicationFiled: August 22, 2012Publication date: April 11, 2013Inventors: Naoyuki Kofuji, Ken'etsu Yokogawa, Nobuyuki Negishi, Masami Kamibayashi, Masatoshi Miyake
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Patent number: D713304Type: GrantFiled: March 27, 2013Date of Patent: September 16, 2014Assignee: Mazda Motor CorporationInventors: Yasutake Tsuchida, Yoshito Iwauchi, Masatoshi Miyake, Ryuji Kumagai
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Patent number: D883880Type: GrantFiled: September 20, 2017Date of Patent: May 12, 2020Assignee: MAZDA MOTOR CORPORATIONInventors: Hiroto Arai, Yuka Moriwaki, Masatoshi Miyake, Heitetsu Takemoto