Abstract: Provided is a heat treatment apparatus in which a heat treatment apparatus in which the thermal efficiency is high, the maintenance expense is low, the throughput is high, the surface roughness of a sample can be reduced, and the discharge uniformity is excellent, although the heat treatment is performed at 1200° C. or more. A heat treatment apparatus includes: parallel planar electrodes; a radio-frequency power supply generating plasma by applying radio-frequency power between the parallel planar electrodes; a temperature measuring section measuring the temperature of a heated sample; and a control unit controlling an output of the radio-frequency power supply, wherein at least one of the parallel planar electrodes has a space where the heated sample is installed, therein, and heats the sample in the electrode by the plasma generated between the parallel planar electrodes.

Abstract: Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.

Abstract: The present invention relates to a heat treatment apparatus that performs activation annealing or defect repair annealing and surface oxidization which succeed impurity doping intended to control the conductive property of a semiconductor substrate. In the present invention, a sample to be heated is placed on a lower electrode in a plasma treatment chamber. A gap between an upper electrode and the lower electrode is filled with a gap whose main raw material is a rare gas (helium, argon, krypton, xenon, or the like) having a pressure close to the atmospheric pressure. A power fed from a high-frequency power supply is applied to the upper electrode in order to induce an atmospheric-pressure glow discharge. Gas heating in the gap between the electrodes, which depends on the glow discharge, is used to heat-treat the sample to be heated.

Abstract: A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.

Abstract: The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.

Abstract: The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer.

Abstract: A plasma processing apparatus which can remove foreign particles over an object to be processed during or before/after the discharging is provided. The plasma processing apparatus includes a processing chamber; a processing gas supplying unit for supplying a processing gas into the processing chamber, an antenna electrode for supplying a radio frequency electric power into the processing chamber and forming a plasma, a vacuum evacuating unit for evacuating the inside of the processing chamber; a disposing electrode for disposing the object into the processing chamber and holding the object therein; and a DC power supply for supplying a negative electric potential to the antenna electrode.

Abstract: An organoxy-terminated organopolysiloxane of the general formula (A): wherein R is a monovalent hydrocarbon group, R1 is a monovalent hydrocarbon group of 1-18 carbon atoms, and R2 is an organic group of 1-18 carbon atoms, and “a” is an integer of 0, 1 or 2, is prepared by reacting an organopolysiloxane of the formula: HO(R2SiO)nH having a viscosity of 10-100,000 centistokes at 25° C. with an organoxysilane of the formula: (R2O)4-a—Si—(R1)a or a partial hydrolyzate thereof in the presence of a tetraalkoxytitanium.

Abstract: A room temperature curable organopolysiloxane composition comprising (1) a hydroxyl end-blocked organopolysiloxane having a viscosity of 10-1,000,000 centistokes at 25° C. in admixture with a premix of (2) methyltriacetoxysilane or a partial hydrolyzate thereof as a curing agent and (3) methanol is improved in shelf stability, physical properties and outer appearance as well as adhesion to aluminum.

Abstract: A hydrolyzable group end-blocked organopolysiloxane is prepared by reacting (A) an organopolysiloxane having a silanol group at each end of its molecular chain with (B) an organosilicon compound having hydrolyzable groups or a partial hydrolyzate thereof in the presence of (C) a condensation catalyst. Use is made of a vibratory mixer comprising a conduit through which a fluid flows in an axial direction and an agitating element disposed in the conduit for reciprocal motion in the flow direction. A reactant mixture of necessary components is introduced into the conduit where the components are vibro-agitated by the agitating element while reaction takes place.

Abstract: In a process for preparing a one-package RTV organopolysiloxane composition comprising (A) an organopolysiloxane containing at least two Si—OH groups or hydrolyzable groups, (B) an organosilane having at least two hydrolyzable groups or a partial hydrolyzate thereof, and (C) an inorganic filler, components (A) and (B) are premixed in a substantially anhydrous state, and component (C) is then added to the premix. Despite the absence of sag-control agents, the composition in the uncured state has a sufficient viscosity for sag-control, ease of extrusion, and improved slump properties.

Abstract: The invention provides an RTV organopolysiloxane composition comprising (A) a terminally di- or trifunctional organopolysiloxane, (B) an alkoxysilane, (C) calcium carbonate surface treated with a carboxylic acid having a melting point of at least 100.degree. C., and (D) a condensation catalyst. The composition cures into a cured product capable of forming a durably thermoresistant and water immersion-resistant bond to substrates such as surface treated aluminum members, fluoro-resin coated steel strips and acrylic resin electrodeposited steel strips.

Abstract: In an RTV organopolysiloxane composition comprising a hydroxy-terminated diorganopolysiloxane and an organic silicon compound having at least three hydrolyzable groups, there is blended calcium carbonate which has been treated with 1-2.5% by weight of an agent having a melting or softening point of at least 100.degree. C. or a saturated fatty acid having at least 21 carbon atoms. The composition is adhesive to even surface treated aluminum plates and maintain a firm bond under water immersion and at elevated temperatures.

Abstract: A primer composition comprises (A) an organosilicon compound of the general formula (1) ##STR1## wherein R represents an alkylene group having from 1 to 6 carbon atoms, R.sup.1 represents a divalent hydrocarbon group having not less than 4 carbon atoms, R.sup.2 's may be the same or different and independently represent an unsubstituted or substituted monovalent hydrocarbon group, a is 0 or 1, and b is 0, 1, 2 or 3, and (B) a catalyst for condensation of the organosilicon compound and (C) an organopolysiloxane resin.

Abstract: Novel aluminosiloxanes having an Al--O--Si linkage, titanosiloxanes having a Ti--O--Si linkage, and stannosiloxanes having a Sn--O--Si linkage in a molecule are provided. Aluminosiloxanes are formed by reacting aluminum alkoxides with cyclotrisiloxanes. Titanosiloxanes are formed by reacting titanium alkoxides with cyclotrisiloxanes. Stannosiloxanes are formed by reacting diorganotin dialkoxides with cyclotrisiloxanes. Reaction processes are simple.