Patents by Inventor Masatoshi Nakagaki

Masatoshi Nakagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220209497
    Abstract: A light emitting device includes first to third semiconductor laser elements. Each of the semiconductor laser elements includes at least two emitters, and configured to emit red-color light, green-color light, or blue-color light. The mount member includes first to third conduction parts, each including a plurality of metal films including mounting regions that are aligned in a predetermined direction. The first to third semiconductor laser elements are respectively mounted on the first to third conduction parts of the mount member in a junction-down configuration.
    Type: Application
    Filed: March 17, 2022
    Publication date: June 30, 2022
    Inventors: Masatoshi NAKAGAKI, Soichiro MIURA
  • Patent number: 11336075
    Abstract: A light emitting device comprises: a semiconductor laser element; a base portion comprising: a bottom portion on which the semiconductor laser element is located, and a frame portion comprising a step and surrounding the semiconductor laser element; and a light reflecting member disposed on the bottom portion of the base portion so as to lean against the step, the light reflecting member being configured to reflect light from the semiconductor laser element.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 17, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Masatoshi Nakagaki, Kazuma Kozuru
  • Patent number: 11309681
    Abstract: A mount member includes first and second conduction parts. In the first conduction part, as seen in a top view, a length in a first direction parallel to an emission end surface of a first semiconductor laser element is smaller than a length in a second direction perpendicular to the emission end surface, and, in relation to the second direction, a first wiring region extends from a first mounting region in a direction from the light emission end surface to an opposite end surface. In relation to the second direction, a second conduction part extends further than the first conduction part in a direction from an emission end surface to an opposite end surface of a second semiconductor laser element, and from a region where the second conduction part extends further than the first conduction part, the second conduction part extends toward the first conduction part in the first direction.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: April 19, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Masatoshi Nakagaki, Soichiro Miura
  • Publication number: 20220102332
    Abstract: A light-emitting device includes first and second light-emitting elements, first and second support members bonded to the first and second light-emitting elements, respectively, first and second protective elements, and a plurality of wirings including: a first wiring with one end being bonded to the first light-emitting element or the first support member; a second wiring with one end being bonded to the first light-emitting element or the first support member and the other end being bonded to the second light-emitting element or the second support member; a third wiring with one end being bonded to the first protective element or a support member equipped with the first protective element; and a fourth wiring with one end being bonded to the second protective element or a support member equipped with the second protective element.
    Type: Application
    Filed: September 29, 2021
    Publication date: March 31, 2022
    Inventors: Takeshi IMAI, Masatoshi NAKAGAKI
  • Publication number: 20220013429
    Abstract: A semiconductor device includes: a semiconductor element; a submount on which the semiconductor element is mounted, wherein the submount has a first surface on which the semiconductor element is mounted, a second surface located on a side opposite the first surface, and a lateral surface located between the first surface and the second surface, and wherein the submount comprises: a groove located at the second surface, a heat dissipation portion located at the second surface, and an electrode pattern located at the first surface; a package substrate on which the submount is mounted; a first joint member that physically joins the heat dissipation portion to the package substrate; and a connection portion located on the side surface, wherein the connection portion electrically connects the electrode pattern and the package substrate, and the connection portion comprises a second joint member.
    Type: Application
    Filed: July 6, 2021
    Publication date: January 13, 2022
    Applicant: NICHIA CORPORATION
    Inventors: Tadaaki MIYATA, Yoshihiro KIMURA, Masatoshi NAKAGAKI
  • Publication number: 20200251881
    Abstract: A mount member includes first and second conduction parts. In the first conduction part, as seen in a top view, a length in a first direction parallel to an emission end surface of a first semiconductor laser element is smaller than a length in a second direction perpendicular to the emission end surface, and, in relation to the second direction, a first wiring region extends from a first mounting region in a direction from the light emission end surface to an opposite end surface. In relation to the second direction, a second conduction part extends further than the first conduction part in a direction from an emission end surface to an opposite end surface of a second semiconductor laser element, and from a region where the second conduction part extends further than the first conduction part, the second conduction part extends toward the first conduction part in the first direction.
    Type: Application
    Filed: January 28, 2020
    Publication date: August 6, 2020
    Inventors: Masatoshi NAKAGAKI, Soichiro MIURA
  • Publication number: 20200227888
    Abstract: A light emitting device comprises: a semiconductor laser element; a base portion comprising: a bottom portion on which the semiconductor laser element is located, and a frame portion comprising a step and surrounding the semiconductor laser element; and a light reflecting member disposed on the bottom portion of the base portion so as to lean against the step, the light reflecting member being configured to reflect light from the semiconductor laser element.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 16, 2020
    Applicant: NICHIA CORPORATION
    Inventors: Masatoshi NAKAGAKI, Kazuma KOZURU
  • Patent number: 10424555
    Abstract: A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main surface of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: September 24, 2019
    Assignee: NICHIA CORPORATION
    Inventor: Masatoshi Nakagaki
  • Publication number: 20190006310
    Abstract: A mounting component includes a main body and a metal layer. The main body has a first main surface and a second main surface. The metal layer is arranged on the first main sur face of the main body. The metal layer includes at least one concave recognition mark having an inclined surface that is inclined with respect to a main surface of the metal layer.
    Type: Application
    Filed: June 26, 2018
    Publication date: January 3, 2019
    Inventor: Masatoshi NAKAGAKI
  • Publication number: 20180183205
    Abstract: A method of manufacturing a laser package includes: providing a plurality of laser devices, each including: a submount, and an edge-emitting semiconductor laser element disposed on the submount; providing one or more optical members; providing a substrate; disposing a first bonding material and a second bonding material on the substrate; placing the plurality of laser devices on the upper surface of the substrate via the first bonding material, and placing the one or more optical members on the upper surface of the substrate via the second bonding material; and collectively heating the plurality of laser devices and the one or more optical members on the substrate without pressing the plurality of laser devices and the one or more optical members onto the substrate, so as to bond the laser devices and the one or more optical members to the substrate via the first and second bonding materials.
    Type: Application
    Filed: December 26, 2017
    Publication date: June 28, 2018
    Applicant: NICHIA CORPORATION
    Inventors: Masatoshi NAKAGAKI, Kazuma KOZURU, Eiichiro OKAHISA
  • Patent number: 9780523
    Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: October 3, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Hideyuki Fujimoto, Masatoshi Nakagaki
  • Publication number: 20160111854
    Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.
    Type: Application
    Filed: December 29, 2015
    Publication date: April 21, 2016
    Inventors: Hideyuki Fujimoto, Masatoshi Nakagaki
  • Publication number: 20130250987
    Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 26, 2013
    Inventors: Hideyuki FUJIMOTO, Masatoshi NAKAGAKI
  • Patent number: 4068113
    Abstract: A bare welding electrode of a diameter of at least 3.0 mm for use in a large current gas shielded arc welding process in which steel for low temperature use is welded by a welding current of at least 500 A in a shielding gas composed mainly of an inert gas such as Ar, He or the like. In one aspect the electrode comprises up to 0.12% C, up to 0.8% Si, up to 3.0% Mn up to 0.25% Ti, at least one member selected from the group consisting of up to 4.0% Ni, up to 0.8% Cr and up to 1.0% Mo and the carbon equivalent (Ceq), of said electrode being up to 0.60% which is represented by the formulaCeq = C + 1/6Mn + 1/24Si + 1/40Ni + 1/5Cr + 1/4 Mowherein each element denotes the content, % by weight of the element. In the second aspect the bare welding electrode comprises up to 0.12% C, up to 0.8% Si, up to 3.0% Mn, up to 0.19% Ti, 0.0005 to 0.015% B, at least one member selected from the group consisting of up to 4.0% Ni, up to 0.8% Cr and up to 1.0% Mo and which a carbon equivalent of up to 0.
    Type: Grant
    Filed: November 26, 1975
    Date of Patent: January 10, 1978
    Assignee: Kobe Steel, Ltd.
    Inventors: Tomokazu Godai, Isao Aida, Masatoshi Nakagaki
  • Patent number: 4020312
    Abstract: A method of manufacturing a thick, high-strength steel pipe for low temperature service comprising the steps of forming into tubular shape a steel plate having a thickness of over 12 mm and a specific composition, of which the C.sub.eq value is adjusted to less than 0.50, when the Mn content is less than 1.0 % whereas the C.sub.eq value is adjusted to less than 0.45 when the Mn content is over 1.0 % and less than 2.0 %, and nextly of welding said tube form at high speeds and high efficiency by the process of single electrode or multiple electrode large-current gas-shielded arc welding with one pass per electrode on each side of the seam at a specific condition, each electrode preferably consisting of a solid wire essentially containing less than 0.3 % Ti with or without the addition of less than 0.
    Type: Grant
    Filed: November 21, 1975
    Date of Patent: April 26, 1977
    Assignees: Nippon Kokan Kabushiki Kaisha, Kobe Steel Ltd.
    Inventors: Mutsuro Araki, Bunshiro Sakai, Itaru Watanabe, Makoto Yamada, Koshiro Tsukada, Tomokazu Godai, Isao Aida, Masatoshi Nakagaki