Abstract: A method of manufacturing a laser package includes: providing a plurality of laser devices, each including: a submount, and an edge-emitting semiconductor laser element disposed on the submount; providing one or more optical members; providing a substrate; disposing a first bonding material and a second bonding material on the substrate; placing the plurality of laser devices on the upper surface of the substrate via the first bonding material, and placing the one or more optical members on the upper surface of the substrate via the second bonding material; and collectively heating the plurality of laser devices and the one or more optical members on the substrate without pressing the plurality of laser devices and the one or more optical members onto the substrate, so as to bond the laser devices and the one or more optical members to the substrate via the first and second bonding materials.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: A bare welding electrode of a diameter of at least 3.0 mm for use in a large current gas shielded arc welding process in which steel for low temperature use is welded by a welding current of at least 500 A in a shielding gas composed mainly of an inert gas such as Ar, He or the like. In one aspect the electrode comprises up to 0.12% C, up to 0.8% Si, up to 3.0% Mn up to 0.25% Ti, at least one member selected from the group consisting of up to 4.0% Ni, up to 0.8% Cr and up to 1.0% Mo and the carbon equivalent (Ceq), of said electrode being up to 0.60% which is represented by the formulaCeq = C + 1/6Mn + 1/24Si + 1/40Ni + 1/5Cr + 1/4 Mowherein each element denotes the content, % by weight of the element. In the second aspect the bare welding electrode comprises up to 0.12% C, up to 0.8% Si, up to 3.0% Mn, up to 0.19% Ti, 0.0005 to 0.015% B, at least one member selected from the group consisting of up to 4.0% Ni, up to 0.8% Cr and up to 1.0% Mo and which a carbon equivalent of up to 0.

Abstract: A method of manufacturing a thick, high-strength steel pipe for low temperature service comprising the steps of forming into tubular shape a steel plate having a thickness of over 12 mm and a specific composition, of which the C.sub.eq value is adjusted to less than 0.50, when the Mn content is less than 1.0 % whereas the C.sub.eq value is adjusted to less than 0.45 when the Mn content is over 1.0 % and less than 2.0 %, and nextly of welding said tube form at high speeds and high efficiency by the process of single electrode or multiple electrode large-current gas-shielded arc welding with one pass per electrode on each side of the seam at a specific condition, each electrode preferably consisting of a solid wire essentially containing less than 0.3 % Ti with or without the addition of less than 0.