Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1); 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2); and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05?Al/(In+Ga+Sn+Al)?0.30 . . . (4).

Abstract: A tracking device includes full-spherical cameras arranged on the right and left. The tracking device pastes a left full-spherical camera image captured with the full-spherical camera on a spherical object, and is installed with a virtual camera inside the spherical object. The virtual camera may freely rotate in a virtual image capturing space formed inside the spherical object, and acquire an external left camera image. Similarly, the tracking device is also installed with a virtual camera that acquires a right camera image, and forms a convergence stereo camera by means of the virtual cameras. The tracking device tracks a location of a subject by means of a particle filter by using the convergence stereo camera formed in this way. In a second embodiment, the full-spherical cameras are vertically arranged and the virtual cameras are vertically installed.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: An image recognition device includes: an image processing device that acquires a feature amount from an image; and an identification device that determines whether a prescribed identification object is present in the image, and identifies the identification object. The identification device includes a BNN that has learned the identification object in advance, and performs identification processing by performing a binary calculation with the BNN on the feature amount acquired by the image processing device. Then, the identification device selects a portion effective for identification from among high-dimensional feature amounts output by the image processing device to reduce the dimensions used in identification processing, and copies low-dimensional feature amounts output by the image processing device to increase dimensions.

Abstract: An image processing device has a function for plotting a luminance gradient co-occurrence pair of an image on a feature plane and applying an EM algorithm to form a GMM. The device learns a pedestrian image and creates a GMM, subsequently learns a background image and creates a GMM, and calculates a difference between the two and generates a GMM for relearning based on the calculation. The device plots a sample that conforms to the GMM for relearning on the feature plane by applying an inverse function theorem. The device forms a GMM that represents the distribution of samples at a designated mixed number and thereby forms a standard GMM that serves as a standard for image recognition. When this mixed number is set to less than a mixed number designated earlier, the dimensions with which an image is analyzed are reduced, making it possible to reduce calculation costs.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size D1 is in a range from 0.05 ?m to 0.5 ?m.

Abstract: An image recognition device involves successively extracting co-occurrence pairs in synchronization with a clock, setting a weighting for the portion connecting the input layer and the intermediate layer corresponding to the extracted co-occurrence pairs, and successively inputting a first vote to the input layer. Meanwhile, the intermediate layer adds and stores the successively inputted number of votes. By continuing this operation, a value the same as if a histogram were inputted to an input layer is achieved in the intermediate layer, without creating a histogram. In this way, the image recognition device of this embodiment can perform image recognition while avoiding the creation of a histogram, which consumes vast amounts of memory. As a result of this configuration, it is possible to save memory resources, simplify circuits, and improve calculation speed, and achieve an integrated circuit suitable to an image recognition device.

Abstract: An image processing device can use a calculation formula based on an ellipse to approximate a base function of a reference GMM. The burden rate according to a co-occurrence correspondence point can be approximately determined by a calculation in which the Manhattan distance to the ellipse and the co-occurrence correspondence point and the width of the ellipse are input to a calculation formula for the burden rate based on the base function. The width of the ellipse is quantized by the nth power of 2 (where n is an integer of 0 or greater), and the calculation can be carried out by means of a bit shift.

Abstract: A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2?) range defined by (A) to (F) below as measured by X-ray (Cu-K ? ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Abstract: An image processing device converts an image that is a recognition object image to high-resolution, medium-resolution, and low-resolution images. The device sets the pixel of interest of the high-resolution image, and votes the co-occurrence in a gradient direction with offset pixels, the co-occurrence in the gradient direction pixels in the medium-resolution image, and the co-occurrence in the gradient direction pixels in the low-resolution image, to a co-occurrence matrix. The device creates such a co-occurrence matrix for each pixel combination and for each resolution. The device executes the process on each of the pixels of the high-resolution image, and creates a co-occurrence histogram wherein the elements of a plurality of co-occurrence matrices are arranged in a line. The device normalizes the co-occurrence histogram and extracts, as a feature quantity of the image, a vector quantity having as a component a frequency resulting from the normalization.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1), 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2), and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03?X/(In+Ga+Sn+X)?0.25 . . . (4).

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: A crystalline structure compound A is represented by a composition formula (2) and has having diffraction peaks respectively in below-defined ranges (A) to (K) of an incidence angle observed by X-ray diffraction measurement. (InxGayAlz)2O3??(2) In the formula (2), 0.47?x?0.53, 0.17?y?0.43, 0.07?z?0.33, and x+y+z=1. 31° to 34° (A), 36° to 39° (B), 30° to 32° (C), 51° to 53° (D), 53° to 56° (E), 62° to 66° (F), 9° to 11° (G), 19° to 21° (H), 42° to 45° (I), 8° to 10° (J), and 17° to 19° (K).

Abstract: An image recognition device executes a Hilbert scan of frame image data constituting moving-image data to generate one-dimensional spatial image data, and further arrays the one-dimensional spatial image data in a time direction to generate two-dimensional spatio-temporal image data that holds spatial information and temporal information. The image recognition device converts the moving-image data into the two-dimensional spatio-temporal image data while holding the spatial and temporal information. By means of a CNN unit, the image recognition device executes a convolution process wherein a two-dimensional filter is used on the spatio-temporal image data to image-recognize a behavior of a pedestrian who is a recognition object.