Abstract: A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07±0.15 ?, b=10.45±0.15 ?, c=11.01±0.15 ?, ?=111.70±0.50°, ?=107.70±0.50° and ?=90.00±0.50°.

Abstract: A vehicle inspection device includes an inspection processing section and a communication processing section. The inspection processing section includes an inspection control section that generates a first communication request or a second communication request based on an inspection program, a communication request transmission buffer that stores the first communication request, and a transmission buffer for high-speed communication that stores the second communication request. The communication processing section transmits the first communication request to an ECU to be inspected and transmits the second communication request to an ECU on which writing is to be performed.

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Abstract: An image recognition device includes: an image processing device that acquires a feature amount from an image; and an identification device that determines whether a prescribed identification object is present in the image, and identifies the identification object. The identification device includes a BNN that has learned the identification object in advance, and performs identification processing by performing a binary calculation with the BNN on the feature amount acquired by the image processing device. Then, the identification device selects a portion effective for identification from among high-dimensional feature amounts output by the image processing device to reduce the dimensions used in identification processing, and copies low-dimensional feature amounts output by the image processing device to increase dimensions.

Abstract: An image recognition device includes: an image processing device that acquires a feature amount from an image; and an identification device that determines whether a prescribed identification object is present in the image, and identifies the identification object. The identification device includes a BNN that has learned the identification object in advance, and performs identification processing by performing a binary calculation with the BNN on the feature amount acquired by the image processing device. Then, the identification device selects a portion effective for identification from among high-dimensional feature amounts output by the image processing device to reduce the dimensions used in identification processing, and copies low-dimensional feature amounts output by the image processing device to increase dimensions.

Abstract: A spatio-temporal image recognition device includes spatio-temporal image data generation units for converting moving-image data which continuously holds spatial information and temporal information to spatio-temporal image data, and they scan the moving-image data on scanning paths different from each other. The spatio-temporal image data generation units generate spatio-temporal image data scanned on the scanning paths different from each other and output them to an image recognition unit. The image recognition unit generates two-dimensional feature maps by individual convolution process of the spatio-temporal image data and then, integrates them, analyzes them by a neural network, and outputs an image recognition result.

Abstract: An image recognition device executes a Hilbert scan of frame image data constituting moving-image data to generate one-dimensional spatial image data, and further arrays the one-dimensional spatial image data in a time direction to generate two-dimensional spatio-temporal image data that holds spatial information and temporal information. The image recognition device converts the moving-image data into the two-dimensional spatio-temporal image data while holding the spatial and temporal information. By means of a CNN unit, the image recognition device executes a convolution process wherein a two-dimensional filter is used on the spatio-temporal image data to image-recognize a behavior of a pedestrian who is a recognition object.

Abstract: A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80?In/(In+Y+Ga)?0.96??(1), 0.02?Y/(In+Y+Ga)?0.10??(2), and 0.02?Ga/(In+Y+Ga)?0.10??(3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005?Al/(In+Y+Ga+Al)?0.07??(4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.

Abstract: A sintered oxide includes an In2O3 crystal, and a crystal A whose diffraction peak is in an incidence angle (2?) range defined by (A) to (F) below as measured by X-ray (Cu—K ? ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Abstract: An image processing device has a function for plotting a luminance gradient co-occurrence pair of an image on a feature plane and applying an EM algorithm to form a GMM. The device learns a pedestrian image and creates a GMM, subsequently learns a background image and creates a GMM, and calculates a difference between the two and generates a GMM for relearning based on the calculation. The device plots a sample that conforms to the GMM for relearning on the feature plane by applying an inverse function theorem. The device forms a GMM that represents the distribution of samples at a designated mixed number and thereby forms a standard GMM that serves as a standard for image recognition. When this mixed number is set to less than a mixed number designated earlier, the dimensions with which an image is analyzed are reduced, making it possible to reduce calculation costs.

Abstract: An image processing device converts an image that is a recognition object image to high-resolution, medium-resolution, and low-resolution images. The device sets the pixel of interest of the high-resolution image, and votes the co-occurrence in a gradient direction with offset pixels, the co-occurrence in the gradient direction pixels in the medium-resolution image, and the co-occurrence in the gradient direction pixels in the low-resolution image, to a co-occurrence matrix. The device creates such a co-occurrence matrix for each pixel combination and for each resolution. The device executes the process on each of the pixels of the high-resolution image, and creates a co-occurrence histogram wherein the elements of a plurality of co-occurrence matrices are arranged in a line. The device normalizes the co-occurrence histogram and extracts, as a feature quantity of the image, a vector quantity having as a component a frequency resulting from the normalization.

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1), 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2), and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03?X/(In+Ga+Sn+X)?0.25 . . . (4).

Abstract: An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01?Ga/(In+Ga+Sn)?0.30 . . . (1); 0.01?Sn/(In+Ga+Sn)?0.40 . . . (2); and 0.55?In/(In+Ga+Sn)?0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05?Al/(In+Ga+Sn+Al)?0.30 . . . (4).

Abstract: A collecting apparatus comprises: a housing which is long and includes a housing space capable of housing a collecting member, the housing having formed therein an inflow port and an outflow port; a gas flow generator that generates a gas flow within the housing space; and a holding portion that holds the collecting member in a position that the gas flow flows, the inflow port being formed on a more upstream side than the collecting member held by the holding portion, and the outflow port being formed on a more downstream side than the collecting member held by the holding portion, and the outflow port opening toward the downstream side such that air that has flowed out from the outflow port flows along a housing outer surface on a more downstream side than the outflow port.

Abstract: A vehicle inspection device includes an inspection processing section and a communication processing section. The inspection processing section includes an inspection control section that generates a first communication request or a second communication request based on an inspection program, a communication request transmission buffer that stores the first communication request, and a transmission buffer for high-speed communication that stores the second communication request. The communication processing section transmits the first communication request to an ECU to be inspected and transmits the second communication request to an ECU on which writing is to be performed.

Abstract: An oxide sintered body includes a bixbyite phase represented by In2O3, and a garnet phase represented by Y3In2Ga3O12.

Abstract: A garnet compound represented by a general formula (I): Ln3In2Ga3-XAlXO12 (I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0?X<3).

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.