Abstract: Systems and methods for detecting and eliminating latent and existing short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The latent paths are first converted to existing short circuit current paths by applying a bias voltage to the devices. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current paths is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.

Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic solar cells on substrate material, whereby, at least six amorphous layers are continuously and sequentially deposited on the substrate material under steady conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, dopant gases are introduced to deposit a first conductive layer. In the second chamber of each triad of chambers, reaction gases are introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, dopant gases are introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.

Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic cells on substrate material, whereby, at least six amorphous semiconductor layers are continuously and sequentially deposited on the substrate material under steady state conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a first conductive semiconductor layer atop the substrate. In the second chamber of each triad of chambers, a gas mixture is introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, a dopant gas mixture is introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer.

Abstract: Large area photovoltaic devices are defined by applying a pattern of electrically-insulating material directly atop the exposed surface of the semiconductor material. Methods of producing these photovoltaic devices in a continuous or batch process are also disclosed herein. Each large area device may include a matrix of electrically-isolated segments, each segment including a common substrate, a semiconductor body atop the substrate, and a transparent, electrically-conductive coating atop the semiconductor layer. Each large area photovoltaic device may include additionally or independently thereof, an electrically-inactive region also defined by the insulating material. The instant method of producing the photovoltaic devices eliminates the scribing steps required by prior art processes, while the product includes a boundary which separates the adjacent, electrically-isolated segments.

Abstract: An upstream or predeposition cathode system for use with glow discharge deposition apparatus, said apparatus adapted for the continuous production of large area photovoltaic devices. In such apparatus, process gases are commonly introduced into a deposition chamber from a gas manifold disposed upstream of a substrate. As the process gases are drawn across the surface of the substrate, they are disassociated and recombined under the influence of an electromagnetic field developed by a deposition cathode or microwave generator. By providing a precathode system upstream of the deposition cathode or microwave generator, (1) impurities in the process gases, (2) contaminants from the walls of the deposition chamber and (3) initially disassociated and recombined process gas compositions may be deposited onto and collected from a collection plate disposed upstream of the substrate.

Abstract: Systems and methods for detecting and eliminating latent and existing short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The latent paths are first converted to existing short circuit current paths by applying a bias voltage to the devices. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current paths is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.

Abstract: Systems and methods for detecting and eliminating short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current path is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.The isolation can be provided by removing the transparent conductive material from electrical contact or connection with the short circuit current path.

Abstract: Electrical interconnections for a large area photovoltaic cells, electrical interconnections for adjacent large area photovoltaic cells and the methods of producing those connections are disclosed herein. The cells are, preferably, of the type which include a plurality of electrically isolated, small area segments sharing a common substrate, a semiconductor body atop the substrate and a transparent, conductive coating atop the semiconductor body. The electrical interconnections include: an electrically-conductive strip interconnecting the small area segments of each large area to provide a first electrode of that cell; and access to the substrate from the layered surface of each large area cell to provide the second electrode of that cell. The electrodes may be electrically-interconnected in series or parallel.

Abstract: The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi-layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element.

Abstract: The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.

Abstract: The production of improved photovoltaic solar cells and the like comprising both p and n type deposited silicon film regions is made possible by a process which provides more efficient p-doped silicon films with higher acceptor concentrations. The process utilizes previously known p-dopant metal or boron gaseous materials in unique forms and conditions in a glow discharge silicon preferably hydrogen and fluorine compensated deposition process. Thus, p-dopant metals like aluminum may be used in an elemental evaporated form, rather than in a gaseous compound form heretofore ineffectively used and deposited with the glow discharge deposited silicon on substrates kept at lower temperatures where fluorine and hydrogen compensation is most effective.

Abstract: Improved method for the generation of and deposition of semiconductor alloys from a plasma are disclosed. The uniformity of deposited layers of amorphous semiconductor material is enhanced by maintaining the frequency of an ionizing a.c. field in the plasma region between the cathode of a glow discharge chamber and the active surface of a substrate at about 50 to 200 kiloHertz to allow the favorable deposition of material at relatively low power. Improved sample quality and deposition control (including uniformity) is realized at even high frequencies by the introduction of a quantity of inert gas into the chamber to alter the energy profile of the plasma.

Abstract: A cathode for use in a glow discharge chamber. A top surface electrode is adapted to provide a substantially uniform distribution of reaction gases at the active surface of an overlying substrate as it advances through the chamber. A plurality of baffles within the cathode creates equal path lengths for reaction gases from their source to the surface electrode and from the surface electrode to a vacuum. The electrode is electrically insulated from a plurality of gas exits so that the generation of plasma is confined solely to a region between the electrode and the active surface of the substrate.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof.

Abstract: In an imaging film having a substrate over which is deposited a thin, opaque layer of an imaging material there is located on at least the outer side of said opaque imaging layer and, better still, on the opposite sides of said opaque layer of imaging material, thin, preferably vapor deposited, passivating layers forming a barrier against passage of oxygen and moisture. The passivating layer, or layers, in a flexible continuous amorphous film having a thickness generally no greater than about 500 Angstroms (A.degree.) and preferably less than 200 A.degree. and comprising an alloy or mixture of a Group IV oxide, most advantageously germanium oxide, and a stabilizing agent or agents, more particularly one or more different oxides of a metal or a semiconductor or a metal fluoride which stabilizes the amorphous character and chemical inertness of the Group IV oxide even when subjected to the elements of the surrounding atmosphere.

Abstract: An imaging film, and a method of making it, comprising a flexible plastic substrate having a thin, high optical density, continuous layer of bismuth, or an alloy of bismuth, deposited on a surface thereof. The bismuth layer has a roughened outer surface. To this roughened surface a layer of a photoactive material is applied which serves as a photoresist as well as a protective overlayer for the bismuth. The photoactive material may be positive or negative working. A layer of a developable photographic emulsion may be applied to the photoactive material layer to impart camera speed to the imaging film. The photoresist side of the film has a non-shiny, essentially non-reflecting black surface which resembles the appearance of developed silver halide films. The substrate side of the film, on the other hand, has a metallic appearance which is easily distinguishable from the photoresist side. This feature of the film enables an operator to readily ascertain the photoresist side of the film and speeds plate making.

Abstract: A dry process high sensitivity imaging film includes a solid, high optical density and substantially opaque film of dispersion imaging material deposited on a substrate. The film of dispersion imaging material comprises a plurality of separate layers of different and substantially mutually insoluble metal components having relatively high melting points and relatively low melting point eutectics, and interfaces between said layers having relatively low melting points.

Abstract: A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and preferably at the same time, introducing at least two or three compensating or altering agents into the film, like activated hydrogen and fluorine, in amounts which substantially reduce or eliminate the localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell applications is obtained and dopants can be effectively added to produce p or n amorphous semiconductor films so that the films function like similar crystalline materials.