Patents by Inventor Masaya Okada
Masaya Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130240900Abstract: There is provided a semiconductor device or the like which includes a channel and a gate electrode in an opening and in which electric field concentration near a bottom portion of the opening can be reduced. The semiconductor device includes n?-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer. An opening 28 extends from the top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located in the opening, the regrown layer 27 including an electron supply layer 26 and an electron drift layer 22, a source electrode S, a drain electrode D, a gate electrode G located on the regrown layer, and a semiconductor impurity adjustment region 31 disposed in the bottom portion of the opening. The impurity adjustment region 31 is a region that promotes a potential drop from the drain electrode side to the gate electrode side in a potential distribution in an off-state.Type: ApplicationFiled: October 17, 2011Publication date: September 19, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Seiji Yaegashi, Makoto Kiyama, Kazutaka Inoue, Mitsunori Yokoyama, Yu Saitoh, Masaya Okada
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Publication number: 20130234156Abstract: It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n?-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n?-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.Type: ApplicationFiled: October 17, 2011Publication date: September 12, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTDInventors: Masaya Okada, Makoto Kiyama, Yu Saitoh, Seiji Yaegashi, Mitsunori Yokoyama, Kazutaka Inoue
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Patent number: 8525184Abstract: There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n?-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the d?-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.Type: GrantFiled: June 22, 2012Date of Patent: September 3, 2013Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Device Innovations, Inc.Inventors: Masaya Okada, Makato Kiyama, Seiji Yaegashi, Ken Nakata
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Publication number: 20130221434Abstract: It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer 15 having an opening 28 and the GaN-based stacked layer 15 includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. The vertical semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.Type: ApplicationFiled: October 5, 2011Publication date: August 29, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Masaya Okada, Makoto Kiyama, Yu Saitoh, Seiji Yaegashi, Mitsunori Yokoyama, Kazutaka Inoue
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Publication number: 20130181255Abstract: There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer 27 including a channel located on a wall surface of an opening 28, a p-type barrier layer 6 whose end face is covered, a source layer 7 that is in contact with the p-type barrier layer, a gate electrode G located on the regrown layer, and a source electrode S located around the opening. In the semiconductor device, the source layer has a superlattice structure that is constituted by a stacked layer including a first layer (a layer) having a lattice constant smaller than that of the p-type barrier layer and a second layer (b layer) having a lattice constant larger than that of the first layer.Type: ApplicationFiled: July 6, 2011Publication date: July 18, 2013Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Makoto Kiyama, Yu Saitoh, Masaya Okada, Seiji Yaegashi, Kazutaka Inoue, Mitsunori Yokoyama
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Publication number: 20130181226Abstract: There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an opening 28 that extends from an n+-type contact layer 8 and reaches an n-type drift layer 4 through a p-type barrier layer 6 is formed. The semiconductor device includes a regrown layer 27 located so as to cover portions of the p-type barrier layer 6 and the like that are exposed to the opening, the regrown layer 27 including an undoped GaN channel layer 22 and a carrier supply layer 26; an insulating layer 9 located so as to cover the regrown layer 27; and a gate electrode G located on the insulating layer 9. In the p-type barrier layer, the Mg concentration A (cm?3)and the hydrogen concentration B (cm?3) satisfy 0.1<B/A<0.9 . . . (1).Type: ApplicationFiled: July 6, 2011Publication date: July 18, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Yu Saitoh, Masaya Okada, Masaki Ueno, Makoto Kiyama
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Publication number: 20130168739Abstract: A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.Type: ApplicationFiled: July 6, 2011Publication date: July 4, 2013Applicant: Sumitomo Electric Industries, Ltd.Inventors: Makoto Kiyama, Yu Saitoh, Masaya Okada, Masaki Ueno, Seiji Yaegashi, Kazutaka Inoue, Mitsunori Yokoyama
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Patent number: 8405125Abstract: The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan.Type: GrantFiled: December 13, 2010Date of Patent: March 26, 2013Assignee: Sumitomo Electric Industries, Ltd.Inventors: Masaya Okada, Makoto Kiyama
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Publication number: 20120273797Abstract: There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n?-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the d?-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.Type: ApplicationFiled: June 22, 2012Publication date: November 1, 2012Applicants: Sumitomo Electric Device Innovations, Inc., Sumitomo Electric Industries, Ltd.Inventors: Masaya Okada, Makoto Kiyama, Seiji Yaegashi, Ken Nakata
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Patent number: 8227810Abstract: There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n?-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the n?-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.Type: GrantFiled: July 9, 2010Date of Patent: July 24, 2012Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Devices Innovations, Inc.Inventors: Masaya Okada, Makoto Kiyama, Seiji Yaegashi, Ken Nakata
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Publication number: 20120181548Abstract: There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body 15 having an opening 28, a regrown layer 27 including a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layer 27 includes an electron transit layer 22 and an electron supply layer 26. The GaN-based layered body includes a p-type GaN layer 6 whose end surface is covered by the regrown layer in the opening, and a p-side electrode 11 that is in ohmic contact with the p-type GaN layer is disposed.Type: ApplicationFiled: June 24, 2010Publication date: July 19, 2012Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Masaya Okada, Makoto Kiyama
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Publication number: 20110204381Abstract: There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n?-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the n?-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.Type: ApplicationFiled: July 9, 2010Publication date: August 25, 2011Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.Inventors: Masaya Okada, Makoto Kiyama, Seiji Yaegashi, Ken Nakata
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Publication number: 20110156050Abstract: The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan.Type: ApplicationFiled: December 13, 2010Publication date: June 30, 2011Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Masaya OKADA, Makoto KIYAMA
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Publication number: 20100183112Abstract: The present invention provides a method of manufacturing a core shroud for a nuclear plant and a nuclear power plant structure in which a groove portion is easily assembled in the case of manufacturing the core shroud having a weld structure of a nuclear power plant by a laser welding, and it is possible to obtain a weld joint portion in which a plastic distortion region and a residual stress are as small as possible, going with a solidification shrinkage of the weld portion. At a time of welding butted portions of a plurality of members constructing a core shroud, a root face is provided in the butted portion, a length of the root face is set to 25% to 95% of a thickness of the thinner one of the butted portions of a plurality of members, a narrow groove is provided in the other than the root face, and the butted portions are welded by a laser welding using a weld wire.Type: ApplicationFiled: December 23, 2009Publication date: July 22, 2010Inventors: Eiji ASHIDA, Xudong Zhang, Shoh Tarasawa, Masaya Okada, Yusuke Anma
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Patent number: 5828619Abstract: In a DRAM, an external cycle count circuit detects an operation cycle of a signal RAS which is externally inputted, and a signal expressing the result is outputted to a CBR signal generating circuit and a self refresh signal generating circuit. In response to outputs from the respective signal generating circuits, an internal RAS signal generating circuit outputs a refresh instruction signal INRAS for CBR refresh and self refresh. For self refresh, as the operation cycle of the signal RAS immediately before self refresh begins, a refresh cycle is set longer. For CBR refresh, when the operation cycle of the signal RAS is long, a CBR refresh instruction signal is generated in accordance with only a part of an operation of the signal RAS. By reducing the frequency of refresh, consumption power is reduced. By means of control which considers a parameter which influences an internal temperature of a semiconductor memory device such as a DRAM, consumption power is reduced and an operation speed is improved.Type: GrantFiled: April 18, 1996Date of Patent: October 27, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroshige Hirano, Masaya Okada