Patents by Inventor Masaya Shima

Masaya Shima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20120049356
    Abstract: According to one embodiment, a semiconductor substrate, a redistribution trace, and a surface layer are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The redistribution trace is formed on the semiconductor substrate. The surface layer is larger in width than the redistribution trace.
    Type: Application
    Filed: August 31, 2011
    Publication date: March 1, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Migita, Hirokazu Ezawa, Soichi Yamashita, Masaya Shima
  • Method for manufacturing a semiconductor device
    Patent number: 7985663
    Abstract: A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.
    Type: Grant
    Filed: May 26, 2009
    Date of Patent: July 26, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takao Sato, Soichi Homma, Masaya Shima
  • METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    Publication number: 20110053320
    Abstract: According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming a debonding layer constituted with a thermoplastic resin on a supporting material, and forming an insulating layer constituted with a thermosetting resin including a solvent dissolving the thermoplastic resin on the debonding layer.
    Type: Application
    Filed: August 5, 2010
    Publication date: March 3, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masayuki Miura, Soichi Homma, Masaya Shima
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20090298228
    Abstract: A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.
    Type: Application
    Filed: May 26, 2009
    Publication date: December 3, 2009
    Inventors: TAKAO SATO, SOICHI HOMMA, MASAYA SHIMA