Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

Abstract: A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.

Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer formed on the semiconductor layer, the organic molecular layer including a plurality of organic molecules, each of the organic molecules includes a tunnel insulating unit of alkyl chain having one end bonded to the semiconductor layer, a charge storing unit, and a bonding unit configured to bond the other end of the alkyl chain to the charge storing unit; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film.

Abstract: A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

Abstract: A hologram-recording medium containing: a recording layer containing a polymerizable monomer containing a structural framework represented by the following general formula (1). In general formula (1), X and Y are not the same, and X and Y are selected from hydrogen, iodine, bromine, and chlorine atoms and from methyl, ethyl, isopropyl, tert-butyl, phenyl, naphthyl, hydroxyl, methoxy, ethoxy, isopropoxy, tert-butoxy, phenoxy, naphthoxy, acetyl, carboxyl, acetoxy, thiophenyl, thionaphthyl, thiomethyl, thioethyl, thioisopropyl, thio-tert-butyl, and thiol groups; and W is selected from the group consisting of benzylvinyl, styryl, acryloyl, and methacryloyl groups.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

Abstract: A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Abstract: A holographic recording method includes the following steps: irradiating an optical recording medium with a coherent reference beam and a coherent information beam to produce a hologram in the optical recording medium while irradiating the optical recording medium with an incoherent pretreatment beam to consume a polymerization inhibitor; irradiating the hologram with the reference beam to extract a reproduction beam while stopping irradiating the optical recording medium with the reference beam; sensing the signal beam with an image pick-up unit to detect an intensity of the signal beam; and calculating a bit error rate with a control unit to irradiate the hologram with the information beam if the bit error rate is larger than a prescribed value, or to stop irradiating the optical recording medium with the reference beam, the information beam and the pretreatment beam if the bit error rate is smaller than the prescribed value.

Abstract: According to a first aspect of the invention, an optical information recording apparatus includes a spatial beam modulator, an optical component, a drive unit, and a control unit. The apparatus performs angle-multiplex recording of the information so that an absolute value of a bisector angle ?x for n-th recording (1?n?rN) is smaller than an absolute value of a bisector angle ?x for m-th recording (m>n and rN<m?N). Here, N is the number of pages to be defined as the total number of recording times performed on a recording spot of an optical information recording medium. The n-th recording is performed on the recording spot with the reference beam and the information beam. r is a rate to be determined by a volumetric shrinkage of the optical information recording medium. The volumetric shrinkage increases with irradiating the optical information recording medium with the reference beam and the information beam.

Abstract: A holographic recording medium includes a recording layer. The recording layer includes a framework being expressed with the following general formula (1), In the above formula (1), Ar represents a substituted or unsubstituted group selected from benzothiophene group, naphthothiophene group, dibenzothiophene group, thienothiophene group, dithienobenzene group, benzothiazole group, naphthothiazole group, benzoisothiazole group, naphthoisothiazole group, phenothiazine group, phenoxathiin group, dithianaphthalene group, thianthrene group, thioxanthene group, and bithiophene group. In addition, n is an integer from 1 to 4.

Abstract: An optical information recording apparatus includes a first optical system that radiates an information beam that carries information onto a recording medium; a second optical system that radiates reference beams onto the recording medium; a radiation position specifying unit that specifies a plurality of recording spots positioned within a radiation range of the reference beams; and an incident angle obtaining unit that specifies an incident angle of the reference beams that is used for recording an i'th interference fringe into a second recording spot adjacent to a first recording spot, as a value obtained by adding a product of 1/(1+m) and an absolute value of a difference between an incident angle of a first reference beam used for recording an i'th interference fringe into the first recording spot and an incident angle of a second reference beam used for recording an (i+1)'th interference fringe into the first recording spot.

Abstract: A holographic recording medium is provided. The medium includes a recording layer. The recording layer includes a polymer matrix, a polymerizable monomer and a photopolymerization initiator. The polymerizable monomer includes a monomer being expressed in the following general formula (M1), (M2), or (M3). In the above general formulas, “A” and “B” denote a polymerizable substituent group and a nonpolymerizable substituent group, respectively.

Abstract: An optical recording medium is provided, which includes a recording layer includes a polymer matrix, a polymerizable compound, a photopolymerization initiator, and a polymerization inhibitor. The polymerization inhibitor is formed of a compound which exhibits a molar absorption coefficient of zero to a light having a first wavelength and generates an acid or a base when exposed to an external stimulus other than the light having the first wavelength, thereby inhibiting the polymerization of the polymerizable compound.