Abstract: An engine device including an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder to a diesel mode in which the liquid fuel is supplied into the cylinder, a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: An engine device including an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder to a diesel mode in which the liquid fuel is supplied into the cylinder, a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: An engine device including an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder to a diesel mode in which the liquid fuel is supplied into the cylinder, a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: An engine device including an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder to a diesel mode in which the liquid fuel is supplied into the cylinder, a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: An engine device of the present invention includes including: an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder to a diesel mode in which the liquid fuel is supplied into the cylinder, a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: An engine device including: an intake manifold configured to supply air into a cylinder; an exhaust manifold configured to output exhaust gas from the cylinder; a gas injector which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve configured to inject a liquid fuel into the cylinder for combustion. At the time of switching the operation mode from one to the other between a gas mode and a diesel mode, an instant switching to the diesel mode is executed when the engine rotation number is determined to approach the upper limit value which leads to an emergency stop of the engine device.

Abstract: An engine device (21) including: an intake manifold (67) configured to supply air into a cylinder (77), an exhaust manifold (44) configured to output exhaust gas from the cylinder; a gas injector (98) which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve (79) configured to inject a liquid fuel into the cylinder for combustion. At the time of switching the operation mode from one to another between a gas mode and a diesel mode, a supply amount of a first fuel to be supplied in a post-switching operation mode is increased to a switching threshold value through an increase control which monotonously increases the supply amount, and then is controlled by a speed-governing control based on the engine rotation number. The switching threshold value is set based on the engine rotation number or the engine load.

Abstract: An engine device (21) including: an intake manifold (67) configured to supply air into a cylinder (77); an exhaust manifold (44) configured to output exhaust gas from the cylinder (77); a gas injector (98) which mixes a gaseous fuel with the air supplied from the intake manifold 67; and a main fuel injection valve (79) configured to inject a liquid fuel into the cylinder (77) for combustion. At the time of switching the operation mode from one to the other between a gas mode and a diesel mode, an instant switching to the diesel mode is executed when the engine rotation number is determined to approach the upper limit value which leads to an emergency stop of the engine device.

Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Abstract: A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Abstract: A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

Abstract: An engine device (21) including: an intake manifold (67) configured to supply air into a cylinder (77), an exhaust manifold (44) configured to output exhaust gas from the cylinder; a gas injector (98) which mixes a gaseous fuel with the air supplied from the intake manifold; and a main fuel injection valve (79) configured to inject a liquid fuel into the cylinder for combustion. At the time of switching the operation mode from one to another between a gas mode and a diesel mode, a supply amount of a first fuel to be supplied in a post-switching operation mode is increased to a switching threshold value through an increase control which monotonously increases the supply amount, and then is controlled by a speed-governing control based on the engine rotation number. The switching threshold value is set based on the engine rotation number or the engine load.

Abstract: An engine device (21) including: an intake manifold (67) configured to supply air into a cylinder (77); an exhaust manifold (44) configured to output exhaust gas from the cylinder (77); a gas injector (98) which mixes a gaseous fuel with the air supplied from the intake manifold (67); and a main fuel injection valve (79) configured to inject a liquid fuel into the cylinder (77) for combustion. At the time of switching from a gas mode in which the gaseous fuel is supplied into the cylinder 77 to a diesel mode in which the liquid fuel is supplied into the cylinder (77), a supply-start timing of the liquid fuel is delayed relative to a supply-stop timing of the gaseous fuel.

Abstract: A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

Abstract: Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

Abstract: An object of the present invention is to provide a SIC single crystal production apparatus that stirs and heats a Si—C solution easily. The apparatus includes a crucible capable of containing a Si—C solution, a seed shaft, and an induction heater. The crucible includes a tubular portion and a bottom portion. The tubular portion includes an outer peripheral surface and an inner peripheral surface. The bottom portion is disposed at a lower end of the tubular portion. The bottom portion defines an inner bottom surface of the crucible. The outer peripheral surface includes a groove extending in a direction crossing the circumferential direction of the tubular portion.

Abstract: The provided by the disclosure is a SiC single crystal production method permitting suppression of temperature variation of a Si—C solution even in a case of long-time crystal growth. The SiC single crystal production method includes: a preparation step of preparing a production apparatus including a crucible, a seed shaft, and an internal lid; a formation step of heating the material in the crucible to form the Si—C solution; a growth step of bringing the seed crystal into contact with the Si—C solution to produce the Si—C single crystal on the seed crystal; an internal lid adjustment step of vertically moving one of the internal lid and the crucible relative to the other during the growth step to keep an amount of variation in vertical distance between the internal lid and the Si—C solution within a first reference range.

Abstract: A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.