Abstract: A method for producing a SiC single crystal by a solution process, comprising contacting a seed crystal substrate held on a seed crystal holding shaft with a Si—C solution to conduct crystal growth of a SiC single crystal, the Si—C solution being housed in a crucible and having a temperature gradient in which the temperature decreases from the interior toward the surface, wherein a high-frequency coil is disposed around the side sections of the crucible, and the crucible has a multilayer structure including an inner crucible, and one or more outer crucibles disposed surrounding the inner crucible, and wherein the method comprises moving the inner crucible alone in the vertical upward direction so as to minimize changes in the relative position of the liquid level of the Si—C solution and the center section of the high-frequency coil in the vertical direction during the crystal growth of the SiC single crystal.