Abstract: According to one embodiment, a method of manufacturing a thin film transistor, includes forming an island-like first insulating layer containing oxygen above an insulating substrate, forming an oxide semiconductor layer above the insulating substrate and the first insulating layer and in contact with the first insulating layer, and performing heat treatment to supply oxygen from the first insulating layer to an overlapping area of the oxide semiconductor layer, which is overlaid on the first insulating layer.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the same achieve size reduction of the thin-film transistor while using an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. A gate electrode is arranged at a position spaced from the channel region of the oxide semiconductor layer so as to face the channel region. A source electrode is electrically connected to the source region of the oxide semiconductor layer. A drain electrode is electrically connected to the drain region of the oxide semiconductor layer. An undercoat layer adjoins the source region and the drain region of the oxide semiconductor layer. A hydrogen blocking layer has a hydrogen concentration lower than that in the undercoat layer and separates the undercoat layer and the channel region of the oxide semiconductor layer.

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Abstract: In one embodiment, a display device having a touch function includes an insulating substrate and a plurality of pixels formed on the insulating substrate and arranged in a matrix of rows and columns. The pixels form a plurality of pixel blocks formed of a plurality of rows and columns of the pixels. A sensor circuit is arranged in a space between adjacent pixels on the insulating substrate and includes a coupling electrode, a detection electrode arranged adjacent to the coupling electrode for forming a coupling capacitance therebetween, and a reading-out circuit to read out a potential of the detection electrode. At least one sensor circuit is arranged in each pixel block. The contact or non-contact by a fingertip or a nib is detected by a potential difference of the detection electrode.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.

Abstract: According to one embodiment, a sensor module includes a first sensor circuit, a second sensor circuit and a differential circuit. The first sensor circuit includes a first detection electrode, a first amplifier formed of a thin-film transistor and a first coupling capacitor. The second sensor circuit includes a second detection electrode, a second amplifier formed of a thin-film transistor and a second coupling capacitor. The differential circuit is connected to the drain electrode of the first amplifier and the drain electrode of the second amplifier.

Abstract: According to one embodiment, a display device includes a plurality of pixel circuits which are arranged in a matrix, a plurality of sensor circuits which are arranged in regions between the pixel circuits and which read the magnitude of capacitance coupling, a plurality of scanning lines for the pixel circuits and sensor circuits, a plurality of signal lines for the pixel circuits and sensor circuits a part of which are shared, a controller which controls alternating-current driving that inverts, with a specific period, the polarity of a display signal written into the pixel circuits, and a determination module which determines a magnitude correlation between a sensor signal read from the sensor circuit and a polarity-based threshold value corresponding to the polarity of alternating-current driving in reading the sensor signal.

Abstract: According to one embodiment, a sensor module includes a first sensor circuit, a second sensor circuit and a differential circuit. The first sensor circuit includes a first detection electrode, a first amplifier formed of a thin-film transistor and a first coupling capacitor. The second sensor circuit includes a second detection electrode, a second amplifier formed of a thin-film transistor and a second coupling capacitor. The differential circuit is connected to the drain electrode of the first amplifier and the drain electrode of the second amplifier.

Abstract: In one embodiment, a display device having a touch function includes an insulating substrate and a plurality of pixels formed on the insulating substrate and arranged in a matrix of rows and columns. The pixels form a plurality of pixel blocks formed of a plurality of rows and columns of the pixels. A sensor circuit is arranged in a space between adjacent pixels on the insulating substrate and includes a coupling electrode, a detection electrode arranged adjacent to the coupling electrode for forming a coupling capacitance therebetween, and a reading-out circuit to read out a potential of the detection electrode. At least one sensor circuit is arranged in each pixel block. The contact or non-contact by a fingertip or a nib is detected by a potential difference of the detection electrode.

Abstract: Two unshielded photosensors to determine the outside-light illuminance and two shielded photosensors are placed alternating both in the longitudinal direction and in the lateral direction. Then, the difference between the output of the unshielded photosensors and the output of the shielded photosensors is obtained. Accordingly, even when the thermoelectric currents differ from each other due to a variation in characteristics between the elements and a difference in the thermal distribution between the elements, the sensor currents can be corrected, so that a photodetector circuit which stably determines the outside-light illuminance can be provided.

Abstract: A capacitor charged beforehand is discharged according to a light surrounding a display unit. A data is decreased similarly to the voltage between the electrodes of the capacitor. A trigger signal is outputted if the data becomes equal to or less than a threshold value. A clock signal whose cycle of changing levels gradually becomes long is generated. A count value is updated at each change of the clock signal's level and the updated count value is outputted. The count value is sampled when the trigger signal is outputted.

Abstract: A capacitor charged beforehand is discharged according to a light surrounding a display unit. A data is decreased similarly to the voltage between the electrodes of the capacitor. A trigger signal is outputted if the data becomes equal to or less than a threshold value. A clock signal whose cycle of changing levels gradually becomes long is generated. A count value is updated at each change of the clock signal's level and the updated count value is outputted. The count value is sampled when the trigger signal is outputted.

Abstract: In a display device, an object approaching a display unit is detected by referring to an image picked up by the display unit. An alternating current drive circuit drives an alternating current signal to the display unit, so that a detection circuit detects an amplitude change or a phase shift. Alternatively, a liquid crystal panel is vibrated at a predetermined frequency, so that the strength of the frequency of the vibration sound is detected. This makes it possible to more accurately detect the timing when the object touches the display unit.

Abstract: Two unshielded photosensors to determine the outside-light illuminance and two shielded photosensors are placed alternating both in the longitudinal direction and in the lateral direction. Then, the difference between the output of the unshielded photosensors and the output of the shielded photosensors is obtained. Accordingly, even when the thermoelectric currents differ from each other due to a variation in characteristics between the elements and a difference in the thermal distribution between the elements, the sensor currents can be corrected, so that a photodetector circuit which stably determines the outside-light illuminance can be provided.

Abstract: A circuit array substrate is provided with thin-film transistors 4 and 5 and PIN diode 6 formed on insulation substrate 3. Active layer 11 and photo-electric sensor portion 21 are made of poly-silicon films. Impurities are doped into active layer 11 and photo-electric sensor portion 21 in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors 4 and 5 with prescribed characteristics and PIN diode 6 with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate 3 with a lesser number of processes.