Abstract: The present invention relates to an Mn4+-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: A2MF6:Mn4+, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises a Ca-containing compound on a particle surface.

Abstract: The present invention relates to an Mn4+-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: A2MF6:Mn4+, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises Ca in a concentration range of at least 20 ppm and at most 10,000 ppm or Cl in a concentration range of at least 20 ppm and at most 300 ppm.

Abstract: The present invention relates to an Mn4|-activated complex fluoride phosphor with improved moisture resistance due to modification of the particle surface, and a light emitting element and light emitting device having excellent color rendering properties and stability due to the use of this phosphor. The phosphor of the present invention is characterized in that it is represented by the general formula: A2MF6:Mn4?, wherein element A is an alkali metal element comprising at least K, element M is one or more metal elements chosen from among Si, Ge, Sn, Ti, Zr and Hf, F is fluorine, and Mn is manganese, wherein the phosphor comprises a Ca-containing compound on a particle surface.

Abstract: Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN3-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiN3 crystal as the host crystal, a strontium nitride containing SrN, Sr2N, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: A method of producing ?-SiAlON includes a sintering process, in which ?-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new ?-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the ?-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.

Abstract: Provided is a production method of a ?-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a ?-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a ?-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.

Abstract: A method of producing ?-SiAlON includes a sintering process, in which ?-SiAlON starting materials, a mixture of silicon nitride, aluminum nitride, optically active element compound, and at least one compound selected from aluminum oxide and silicon oxide, are sintered at temperatures ranging from 1820° C. to 2200° C. The method provides new ?-SiAlON low in carbon content and having high luminescence intensity by placing a plurality of boron nitride vessels in a graphite box to allow the ?-SiAlON starting materials packed in the plurality of boron nitride vessels to easily come in contact with nitrogen gas, and performing sintering in nitrogen atmosphere.

Abstract: ?-SiAlON represented by a general formula Si6-zAlzOzN8-z with Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×1016 spins/g. A method of manufacturing the ?-SiAlON includes: a mixing step of mixing ?-SiAlON materials; a baking step of baking the ?-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C/min.; an annealing step of annealing the ?-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the ?-SiAlON having undergone the annealing step. The objective of the present invention is to provide ?-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the ?-SiAlON, and a light-emitting device using the ?-SiAlON.

Abstract: An abnormality detecting apparatus includes an imaging device for obtaining image data of a TIM, a failure detecting section for detecting appearance failures of the TIM on the basis of the image data of the TIM obtained by the imaging device, and a determining device for determining whether an abnormality occurs at the TIM on the basis of a detection result by the failure detecting section.

Abstract: An electronic device testing apparatus for conveying electronic devices to be tested to sockets of a contact portion and bringing the electronic devices to be tested electrically contact with the sockets to conduct a test of electric characteristics of the electronic devices to be tested, comprising an image pickup portion that takes an image of the sockets; a memory portion that stores reference image data of the sockets in a state of not being attached with any electronic devices to be tested obtained by taking images by the image pickup portion; and a mislay determination portion that obtains check image data of the sockets from the image pickup portion, reads the reference image data from the memory portion, compares the check image data with the reference image data and determines whether any of the electronic devices to be tested remain on the sockets.

Abstract: A method for manufacturing ?-sialon, including: a mixing process wherein at least one of aluminum oxide and silicon oxide, silicon nitride, aluminum nitride, and europium compound are mixed; a burning process wherein the mixture having undergone the mixing process is heated at the temperature hither than 1950° C. but not exceeding 2200° C. for 10 hours or longer; and a heat treatment process wherein heat treatment is conducted after the burning process at the temperature from 1300° C. to 1600° C. in an atmosphere of inert gas other than nitrogen at the partial pressure of 10 kPa or lower.

Abstract: Provided is a production method of a ?-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a ?-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a ?-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid.

Abstract: A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting surface of the solid-state element forms substantially the same plane as a surface of the mounting substrate; and an inorganic sealing portion made of an inorganic sealing material having a thermal expansion coefficient equal to that of the power receiving/feeding portion for sealing the solid-state element.

Abstract: An abnormality detecting apparatus includes an imaging device for obtaining image data of a TIM, a failure detecting section for detecting appearance failures of the TIM on the basis of the image data of the TIM obtained by the imaging device, and a determining device for determining whether an abnormality occurs at the TIM on the basis of a detection result by the failure detecting section.

Abstract: An electronic device handling apparatus for conducting a test of electric characteristics of electronic devices by conveying the electronic devices to sockets of a contact portion and bringing them electrically connected to the sockets: wherein standard image data as image data of sockets to be standard is stored in advance, and inspection image data as image data of sockets as inspection objects is obtained by taking an image by the image pickup device, standard image data is read from a memory device and a defect of a socket as inspection objects is detected by comparing the standard image data with the inspection image data.

Abstract: An electronic device testing apparatus for conveying electronic devices to be tested to sockets of a contact portion and bringing the electronic devices to be tested electrically contact with the sockets to conduct a test of electric characteristics of the electronic devices to be tested, comprising an image pickup portion that takes an image of the sockets; a memory portion that stores reference image data of the sockets in a state of not being attached with any electronic devices to be tested obtained by taking images by the image pickup portion; and a mislay determination portion that obtains check image data of the sockets from the image pickup portion, reads the reference image data from the memory portion, compares the check image data with the reference image data and determines whether any of the electronic devices to be tested remain on the sockets.

Abstract: There is provided a position detection apparatus for detecting position of an image pickup device that outputs an output signal corresponding to intensity of detected light, having a light source for generating light, an illumination lens for illuminating the light generated by the light source onto the image pickup device, a position detecting section for detecting relative position of the image pickup device with respect to the illumination lens based on the output signal outputted out of the image pickup device corresponding to the light received via the illumination lens and a moving section for changing the relative position of the image pickup device to position set in advance by moving at least one of the image pickup device and the illumination lens based on the relative position detected by the position detecting section.

Abstract: A position detecting apparatus for detecting a position of an electronic component, which includes a terminal, includes an image acquiring unit for acquiring an image of the terminal, a terminal area detecting unit for detecting an area of the terminal from the image acquired by the image acquiring unit and an electronic component position detecting unit for detecting a position of the electronic component based on the area of the terminal detected by the terminal area detecting unit and predetermined terminal information of the electronic component.

Abstract: A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting surface of the solid-state element forms substantially the same plane as a surface of the mounting substrate; and an inorganic sealing portion made of an inorganic sealing material having a thermal expansion coefficient equal to that of the power receiving/feeding portion for sealing the solid-state element.