Abstract: In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to the silicon pillar.

Abstract: To provide a solid-liquid separator in which a treatment object such as sludge can be transported without clogging, liquid can be efficiently separated from the treatment object, and a maintenance operation can be easily conducted. Movable plates 12 and fixed plates 13 are disposed alternately, two screws 21, 22 are disposed in recess sections 14, 15 formed in the movable plates 12 and fixed plates 13, parts of blade sections 25, 26 of the two screws 21, 22 overlap each other, the two screws 21, 22 are rotary driven, and the liquid is discharged from the gap between the movable plates 12 and fixed plates 13, while the treatment object is being transported. When the movable plates 12 are replaced, the two screws 21, 22 are lifted up and then the movable plates 12 are pulled up and replaced.

Abstract: A system is disclosed that provides a solid-liquid separator which can transport sludge and other material for treatment without clogging and can efficiently separator liquid from such material for treatment. The system includes movable plates and fixed plates alternatingly disposed and two screws disposed in holes formed in the movable plates and fixed plates. The screws have blades that partially overlap. As the two screws rotate, the material for treatment is transported and the effluent is discharged through the gaps between the movable plates and fixed plates.

Abstract: A method for manufacturing a supercharger rotor by casting a profile portion of a supercharger rotor and a shaft penetrating the same, having the steps of: first cutting a left and right helical cross portion on a surface of the shaft connected to the profile portion, wherein the cross portion includes a right handed helical groove and a left handed helical groove, and these grooves cross each other; and casting the profile portion around the shaft in die-casting. In this way, a plurality of profile portion divided metal molds surround a profile portion and end metal molds surround both rotor ends. A helical core is attached to one end mold to pass through the profile portion. A rotor-shaped cavity forms inside the molds. Hot metal is pressurized, injected and solidified in the cavity, and the end mold having the helical core is pulled out by rotation along a helical line.

Abstract: In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to the silicon pillar.

Abstract: A plurality of profile portion divided metal molds 12 surround a profile portion 11a of a supercharger rotor 11 to allow division. A pair of end metal molds 14 and 15 surround both ends of the rotor. A helical core 16 is attached to one end metal mold 14 so as to be helically passed through the profile portion of the rotor. A rotor-shaped cavity 13 is formed inside by the profile portion divided metal molds, and the end metal molds. Hot metal is pressurized, and injected and solidified in the cavity. Then, the end metal mold 14 having the helical core is pulled out by being rotated along a helical line.

Abstract: In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to the silicon pillar.

Abstract: A plurality of profile portion divided metal molds 12 surround a profile portion 11a of a supercharger rotor 11 to allow division. A pair of end metal molds 14 and 15 surround both ends of the rotor. A helical core 16 is attached to one end metal mold 14 so as to be helically passed through the profile portion of the rotor. A rotor-shaped cavity 13 is formed inside by the profile portion divided metal molds, and the end metal molds. Hot metal is pressurized, and injected and solidified in the cavity. Then, the end metal mold 14 having the helical core is pulled out by being rotated along a helical line.

Abstract: Providing a power supply system having a plurality of power supply apparatuses connected in parallel to each other, each of which is not affected by a voltage fluctuation of a reverse flow-preventive diode provided in an output line thereof, and can provide a stable output voltage controlled with high accuracy. Each of the power supply apparatuses includes a positive output terminal 33 connected to a load 13, a reverse flow-preventive diode 31 connected to the positive output terminal 33, a VF correcting circuit 46 for detecting a forward voltage of the reverse flow-preventive diode 31 and providing a controlling unit with the detected voltage in a feedback manner, an output current detecting/correcting circuit 45 for detecting a forward current of the reverse flow-preventive diode 31 and providing the controlling unit with the detected current in a feedback manner, and the controlling unit for controlling the anode potential of the reverse flow-preventive diode 31.

Abstract: In a semiconductor memory including a dynamic random access memory, a memory cell of the dynamic random access memory includes: a semiconductor pillar (a silicon pillar); a capacitor in which one side of the silicon pillar is used as a charge accumulation electrode; and a longitudinal insulated gate static induction transistor in which the other side of the silicon pillar is used as an active region (a source region, a channel formation region and a drain region), and a bit line is connected to the silicon pillar.

Abstract: A plurality of profile portion divided metal molds 12 surround a profile portion 11a of a supercharger rotor 11 to allow division. A pair of end metal molds 14 and 15 surround both ends of the rotor. A helical core 16 is attached to one end metal mold 14 so as to be helically passed through the profile portion of the rotor. A rotor-shaped cavity 13 is formed inside by the profile portion divided metal molds, and the end metal molds. Hot metal is pressurized, and injected and solidified in the cavity. Then, the end metal mold 14 having the helical core is pulled out by being rotated along a helical line.

Abstract: Providing a power supply system having a plurality of power supply apparatuses connected in parallel to each other, each of which is not affected by a voltage fluctuation of a reverse flow-preventive diode provided in an output line thereof, and can provide a stable output voltage controlled with high accuracy. Each of the power supply apparatuses includes a positive output terminal 33 connected to a load 13, a reverse flow-preventive diode 31 connected to the positive output terminal 33, a VF correcting circuit 46 for detecting a forward voltage of the reverse flow-preventive diode 31 and providing a controlling unit with the detected voltage in a feedback manner, an output current detecting/correcting circuit 45 for detecting a forward current of the reverse flow-preventive diode 31 and providing the controlling unit with the detected current in a feedback manner, and the controlling unit for controlling the anode potential of the reverse flow-preventive diode 31.

Abstract: The switching converters of a power supply device are adapted to equally share the power output of the device. The power supply device 1 comprises a plurality of resonance type switching converters 4, 5 connected in parallel relative to a load, frequency control circuits 6, 7 for controlling respectively the switching frequencies of the switching converters 4, 5, a feedback circuit 8 for feeding back the voltage applied to the load and a resonance current balance circuit 9 for detecting the wave heights of the resonance currents flowing respectively through the switching converters 4, 5 and comparing them. The frequency control circuits 6, 7 control the switching frequencies so as to make the voltage applied to the load show a predetermined voltage value and also make the wave heights of the resonance currents equal to each other.

Abstract: A polishing method and apparatus applied for planarizing a substrate presenting surface step differences in a production process for a substrate of a semiconductor device. The substrate is ground by being brought into sliding contact with a polishing cloth applied taut on a rotary table as a polishing agent is supplied to the polishing cloth. The grinding for the substrate is carried out until partway under a first condition in which the polishing cloth is ground under a pre-set condition by being slidingly contacted with grinding abrasive grains of the rotary grinding head so that surface roughness of the polishing cloth is maintained at a substantially constant value equal to the surface roughness value prevailing prior to start of grinding. The residual portion of the polishing is carried out under a second condition in which the surface roughness of the polishing cloth is gradually lowered by terminating the grinding. Polishing with superior planarity may be achieved in a shorter time.

Abstract: A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

Abstract: A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

Abstract: A thin film transistor in which a device active layer is formed on an insulation film. In which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

Abstract: A battery discharge control circuit is provided with a timer for timing the decision of the state of a battery loaded into a battery discharger between a discharged state and a nondischarged state so that the state of the battery is decided a predetermined time after the battery has been loaded into the battery discharger. The control circuit prevents the battery discharger from discharging an undischarged battery due to noise generated by chattering contact between the battery and the battery discharger in loading the battery into the battery discharger or due to the variation of the detected value of the terminal voltage of the battery caused by the influence of the self-healing characteristic and temperature characteristic of the battery. The control circuit also prevents the battery discharger from again discharging a discharged battery.

Abstract: A static random access memory of the thin film transistor load type which is enhanced in soft error resistance without involving an increase of the area of a cell is disclosed. A conductor layer is connected to the gate electrode of a first one of a pair of thin film transistors which serve as load means of each cell and is formed as a different layer from the first thin film transistor. The conductor layer is layered on a conductor layer of the other second thin film transistor with an insulating layer interposed therebetween to form a coupling capacity between the conductor layer connected to the gate electrode of the first thin film transistor and the conductor layer of the second thin film transistor. Resistors are interposed between the gates and active layers of the first and second thin film transistors and storage nodes connected to the first and second thin film transistors.

Abstract: A memory cell array is divided into a plurality of row sections in a column direction, and one main bit line is arranged between two adjacent columns. One pair of sub bit lines are arranged for each column of the row sections, and the pair of sub bit lines are connected to main bit lines exclusively of sub bit lines which are adjacent to the pair of sub bit lines in columns on both sides of the pair of bit lines. For this reason, the pitch of main bit lines can be set to be almost twice that of conventional main bit lines. Therefore, the time required for the charging/discharging operations of the bit lines can be shortened to increase the operating speed, reliability can be improved, and a yield can be increased.