Patents by Inventor Masayuki Asai
Masayuki Asai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120100722Abstract: Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.Type: ApplicationFiled: September 13, 2011Publication date: April 26, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masayuki ASAI, Koichi HONDA, Mamoru UMEMOTO, Kazuyuki OKUDA
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Publication number: 20120077350Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: ApplicationFiled: November 29, 2011Publication date: March 29, 2012Inventors: Hironobu MIYA, Kazuyuki TOYODA, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Publication number: 20120073751Abstract: Provided is a substrate processing apparatus comprising: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller controls the heating unit such that heating temperature of the substrate becomes a processing temperature lower than a deformation temperature of a first photoresist constituting a first photoresist pattern, and the controller controls the material supply unit to repeat an alternate supply of the Si material and the catalyst, and the oxidation material and the catalyst into the processing chamber a plurality of times.Type: ApplicationFiled: December 6, 2011Publication date: March 29, 2012Inventors: Norikazu MIZUNO, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
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Patent number: 8129443Abstract: There are provided a novel polymerizable composition having an X-ray contrast property and excellent transparency, a cured product thereof, and a composite material comprising powder of the cured product. More specifically, there are provided a polymerizable composition comprising (A) an inorganic oxide having an X-ray contrast property and an average particle diameter of 100 nm or smaller, (B) a surface modifier, (C) a polymerizable compound and (D) a polymerization initiator, a cured product obtained by polymerizing these components, and a composite material comprising powder of the cured product.Type: GrantFiled: July 17, 2001Date of Patent: March 6, 2012Assignee: Sun Medical Co., Ltd.Inventors: Tatsuya Ori, Yasukazu Saimi, Masayuki Asai
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Publication number: 20120034790Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: ApplicationFiled: March 31, 2009Publication date: February 9, 2012Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8105957Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: GrantFiled: March 31, 2009Date of Patent: January 31, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Taketoshi Sato, Masayuki Asai, Norikazu Mizuno, Masanori Sakai, Kazuyuki Okuda, Hideki Horita
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Patent number: 8093159Abstract: Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.Type: GrantFiled: August 29, 2008Date of Patent: January 10, 2012Assignee: Hitachi Kokusai Electric, Inc.Inventors: Norikazu Mizuno, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
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Patent number: 8058184Abstract: Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10?1 or lower.Type: GrantFiled: January 5, 2010Date of Patent: November 15, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Masayuki Asai, Norikazu Mizuno
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Patent number: 8039404Abstract: A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified numberType: GrantFiled: May 27, 2010Date of Patent: October 18, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Publication number: 20110065289Abstract: There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: supplying a silicon-containing gas into a process chamber in which a substrate is accommodated in a heated state; and supplying a nitrogen-containing gas into the process chamber. The supplying of the silicon-containing gas and the supplying of the nitrogen-containing gas are alternately repeated to form a silicon nitride film on the substrate. The process chamber is switched at least once between an exhaust stop state and an exhaust operation state during the supplying of the nitrogen-containing gas so as to vary an inside pressure of the process chamber in a manner such that the maximum inside pressure of the process chamber is twenty or more times the minimum inside pressure of the process chamber.Type: ApplicationFiled: September 13, 2010Publication date: March 17, 2011Applicant: HITACHI-KOKUSAI ELECTRIC INC.Inventor: Masayuki ASAI
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Publication number: 20100233887Abstract: A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified numberType: ApplicationFiled: May 27, 2010Publication date: September 16, 2010Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 7796397Abstract: Provided is an electronic components assembly capable of effectively dealing with unwanted charge accumulated in a capacitor even when general-purpose components are used. An assembly 10 includes an electrolytic capacitor 1, a coil lead 4, and a circuit mounting board 5. The electrolytic capacitor 1 includes a main body 1a, an anode lead 2, and a cathode lead 3. The coil lead 4 is wrapped around the main body 1a. The circuit mounting board 5 has the electrolytic capacitor 1 and the coil lead 4 mounted thereon. The coil lead 4 is connected to a ground of the circuit mounting board 5.Type: GrantFiled: August 22, 2007Date of Patent: September 14, 2010Assignee: Panasonic CorporationInventors: Hideaki Yamauchi, Masayuki Asai, Shuusaku Yamamoto, Takashi Sakaguchi, Takashi Yamamoto
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Patent number: 7779785Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: GrantFiled: February 15, 2006Date of Patent: August 24, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Patent number: 7767594Abstract: Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10?1 or lower.Type: GrantFiled: January 17, 2007Date of Patent: August 3, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Hironobu Miya, Masayuki Asai, Norikazu Mizuno
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Publication number: 20100173501Abstract: Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10?1 or lower.Type: ApplicationFiled: January 5, 2010Publication date: July 8, 2010Inventors: Hironobu Miya, Masayuki Asai, Norikazu Mizuno
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Publication number: 20090277382Abstract: Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.Type: ApplicationFiled: March 18, 2009Publication date: November 12, 2009Inventors: Norikazu Mizuno, Kenji Kanayama, Kazuyuki Okuda, Yoshiro Hirose, Masayuki Asai
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Publication number: 20090280652Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.Type: ApplicationFiled: March 31, 2009Publication date: November 12, 2009Inventors: Hironobu Miya, Kazuyuki Toyoda, Norikazu Mizuno, Taketoshi Sato, Masanori Sakai, Masayuki Asai, Kazuyuki Okuda, Hideki Horita
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Publication number: 20090278235Abstract: Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.Type: ApplicationFiled: August 29, 2008Publication date: November 12, 2009Inventors: Norikazu MIZUNO, Kenji KANAYAMA, Kazuyuki OKUDA, Yoshiro HIROSE, Masayuki ASAI
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Publication number: 20090130331Abstract: A thin film is deposited on a substrate to be processed by continuously performing: forming an amorphous thin film composed of Ti, N, C, and H as principal components; oxidizing a surface of the thin film; removing C and H, which are impurities in the thin film, by a plasma treatment, and increasing the density of the thin film; and removing a TiO thin film from a surface of the thin film.Type: ApplicationFiled: August 10, 2006Publication date: May 21, 2009Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masayuki Asai, Masayuki Tsuneda, Shinya Sasaki
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Patent number: 7531467Abstract: To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.Type: GrantFiled: January 21, 2005Date of Patent: May 12, 2009Assignee: Hitachi Kokusai Electric, Inc.Inventors: Atsushi Sano, Sadayoshi Horii, Hideharu Itatani, Masayuki Asai