Abstract: To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step.

Abstract: Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10?1 or lower.

Abstract: Disclosed is a substrate processing apparatus which includes: a processing chamber to process a substrate; an exhaust path to exhaust the processing chamber; an exhaust device; an exhaust valve to open and close the exhaust path; a raw material gas supply member to supply raw material gas which contributes to film forming into the processing chamber; a cleaning gas supply member to supply cleaning gas which removes an accretion which adheres to an inside of the processing chamber with the raw material gas being supplied, the cleaning gas supply member comprising a supply path to supply the cleaning gas to the processing chamber and a supply valve to open and close the supply path; and a control section which controls the exhaust valve and the supply valve to supply the cleaning gas from the supply path to the processing chamber with exhaustion of the processing chamber being stopped.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: Provided is an electronic components assembly capable of effectively dealing with unwanted charge accumulated in a capacitor even when general-purpose components are used. An assembly 10 includes an electrolytic capacitor 1, a coil lead 4, and a circuit mounting board 5. The electrolytic capacitor 1 includes a main body 1a, an anode lead 2, and a cathode lead 3. The coil lead 4 is wrapped around the main body 1a. The circuit mounting board 5 has the electrolytic capacitor 1 and the coil lead 4 mounted thereon. The coil lead 4 is connected to a ground of the circuit mounting board 5.

Abstract: To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

Abstract: To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step.

Abstract: There are provided a novel polymerizable composition having an X-ray contrast property and excellent transparency, a cured product thereof, and a composite material comprising powder of the cured product. More specifically, there are provided a polymerizable composition comprising (A) an inorganic oxide having an X-ray contrast property and an average particle diameter of 100 nm or smaller, (B) a surface modifier, (C) a polymerizable compound and (D) a polymerization initiator, a cured product obtained by polymerizing these components, and a composite material comprising powder of the cured product.

Abstract: According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once.

Abstract: It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature.

Abstract: A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step.

Abstract: It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature.

Abstract: A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step.

Abstract: According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once.

Abstract: A substrate processing apparatus includes a CVD (chemical vapor deposition) processing chamber and a RTO (rapid thermal oxidation) processing chamber. In the CVD processing chamber, a film growing process, in which thin amorphous film is deposited on a substrate, and an impurity removing process, in which specific impurities included in the grown amorphous film are removed, are repeatedly performed multiple times to provide an impurity removed amorphous film with good step coverage. Thus treated amorphous film on the substrate is then crystallized in the RTO process chamber to provide a crystalline film.

Abstract: In a twisting formation method having an inside jig provided in a ring shape with inside holding portions for folding one of the straight portions of a near letter U shaped wire and an outside jig provided in a shape of ring concentric with that of the inside holding portions with outside holding portions for folding the other of the straight portions, the connecting portion of the near letter U shaped wire being formed in a twisted shape by rotating relatively the inside and outside jigs, the method includes urging leading ends of the straight portions and the connecting portion in a contracting direction.

Abstract: A crushing machine having enhanced crushing efficiency. The crushing machine includes an outer casing having a fixed jaw and a movable jaw each having a crushing blade for crushing reinforced concrete. The movable jaw includes a crushing blade having a rear-side edge formed in a substantially right-angled shape with a small arcuate edge portion located at an angled edge portion thereof, and a front-side edge generally formed by a large arcuate edge portion. The rear-side edge of the movable jaw crushing blade is oriented to face in a longitudinally inward direction away from a distal end of the movable jaw. The inward orientation of the rear-side edge along with its substantially right-angled shape allow the movable jaw crushing blade to concentrate the load of the crushing machine to the small point of contact between the movable jaw crushing blade and the reinforced concrete, thereby maximizing the crushing efficiency of the crushing machine.

Abstract: A process time estimating apparatus is disclosed for estimating the process time for manufacturing an object such as a metal die. The apparatus includes a process time estimating section, a process occupancy time measurement section and a process program scheduling section. The process time estimating section includes a neural network device as an estimating device. An estimation input factor extracting section extracts input factors such as drawing information for an object to be manufactured. A storing section stores input factors for later neural network learning to improve the estimation capability of the system. The process occupancy time measurement section reads the process code and automatically measures the actual time involved in performing the process for a particular object being manufactured. A selecting section selects a measured process time for neural network learning.

Abstract: A wood preservative composition which comprises a wood preservative in an amount of 0.01-10% by weight and a diphenylalkane compound represented by the general formula ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are independently hydrogen or an alkyl, in an amount of not less than 1% by weight and in an amount of 1-1000 parts by weight in relation to one part by weight of the wood preservative.