Abstract: A cleaning method of cleaning a film-forming device, which includes a processing container having a substrate holder provided in the processing container so as to hold a SiC substrate, and which supplies a source gas to the processing container, an interior of which is depressurized, and heats the SiC substrate so as to perform a film formation on the SiC substrate, includes: a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the SiC substrate, by supplying a ClF3 gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container.

Abstract: A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.

Abstract: There is provided a film forming apparatus for heating a target substrate on a stage, supplying a processing gas to the target substrate, and performing a film forming process on the target substrate, including: an accommodation part having an internal space for accommodating the stage, wherein the processing gas is supplied to the internal space and is inductively heated; a rotary shaft part configured to rotatably support the stage; and an elevating part configured to raise and lower the target substrate to deliver the target substrate between an external substrate transfer device and the stage, wherein at least one of the rotary shaft part and the elevating part is formed of a material having a thermal conductivity of 15 W/m·K or less and a melting point of 1,800 degrees C. or higher.

Abstract: A film forming apparatus for forming a silicon carbide film on a target substrate includes a substrate support on which the target substrate is placed, a gas supply mechanism configured to form a flow of a raw material gas along a direction perpendicular to a central axis of the substrate support from outside of the substrate support, and an induction coil configured to heat the target substrate. The gas supply mechanism supplies, in addition to a first Si-containing gas containing silicon without containing carbon and a first C-containing gas containing carbon without containing silicon, at least one of a second Si-containing gas having a thermal decomposition temperature higher than that of the first Si-containing gas and containing silicon without containing carbon and a second C-containing gas having a thermal decomposition temperature lower than that of the first C-containing gas and containing carbon without containing silicon, as the raw material gas.

Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.

Abstract: A cleaning method of cleaning a film-forming device, which includes a processing container having a substrate holder provided in the processing container so as to hold a SiC substrate, and which supplies a source gas to the processing container, an interior of which is depressurized, and heats the SiC substrate so as to perform a film formation on the SiC substrate, includes: a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the SiC substrate, by supplying a ClF3 gas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container.

Abstract: In a film-forming apparatus, a rotary shaft is connected to a rotary stage. A plurality of wafers are placed in a plurality of placement regions arranged in a circumferential direction with respect to a central axis line of the rotary shaft and is held by the rotary stage. The rotary stage is accommodated in an internal space of a susceptor. In this internal space, a gas supply mechanism generates a process gas flow along a direction orthogonal to the axis line from the outside of the rotary stage. A heat insulating material is installed in a heat insulating region in the internal space of the susceptor. The heat insulating region is located more outwardly from the axis line than positions in the placement regions nearest to the central axis line and more inwardly from the central axis line than positions in the placement regions farthest from the axis line.

Abstract: A film forming apparatus includes a rotation shaft which is connected to a rotation stage. The rotation stage is accommodated in an inner space of a susceptor, holds a plurality of workpieces, and rotates the workpieces around the central axis. A gas flow along a direction orthogonal to the central axis from an outside of the rotation stage is formed in the susceptor. A wall portion of the susceptor facing a lower surface of the rotation stage includes an intermediate area defined by a first circle larger than a minimum distance between the central axis and the plurality of placing areas and a second circle smaller than a maximum distance between the central axis and the plurality of placing areas. One or more of through holes are formed in the intermediate area.

Abstract: In a film-forming apparatus, a rotary shaft is connected to a rotary stage. A plurality of wafers are placed in a plurality of placement regions arranged in a circumferential direction with respect to a central axis line of the rotary shaft and is held by the rotary stage. The rotary stage is accommodated in an internal space of a susceptor. In this internal space, a gas supply mechanism generates a process gas flow along a direction orthogonal to the axis line from the outside of the rotary stage. A heat insulating material is installed in a heat insulating region in the internal space of the susceptor. The heat insulating region is located more outwardly from the axis line than positions in the placement regions nearest to the central axis line and more inwardly from the central axis line than positions in the placement regions farthest from the axis line.

Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.

Abstract: A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.

Abstract: A film forming apparatus includes a processing chamber inside which a vacuum space is maintained and to which a film forming gas is supplied, a substrate supporting unit which is disposed inside the processing chamber and supports a substrate, and a heater which is made of a compound material comprising a high-melting point metal and carbon, is disposed inside the processing chamber, and heats the substrate.