Patents by Inventor Masayuki Hata

Masayuki Hata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7485902
    Abstract: A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: February 3, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Daijiro Inoue, Yasuhiko Nomura, Masayuki Hata, Takashi Kano, Tsutomu Yamaguchi
  • Patent number: 7486712
    Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: February 3, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Yasuyuki Bessho, Yasuhiko Nomura, Masayuki Shono, Kenji Nagatomi, Yoichi Tsuchiya
  • Publication number: 20090028204
    Abstract: A semiconductor laser device includes a substrate made of a nitride-based semiconductor and a waveguide formed on a principal surface of the substrate, wherein the substrate includes a dislocation concentrated region arranged so as to obliquely extend with respect to the principal surface of the substrate, and the waveguide is so formed as to be located above the dislocation concentrated region and also located on a region except a portion where the dislocation concentrated region is present in the principal surface of the substrate.
    Type: Application
    Filed: July 24, 2008
    Publication date: January 29, 2009
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Ryoji Hiroyama, Yasuhiko Nomura, Masayuki Hata, Yasuto Miyake
  • Publication number: 20080317080
    Abstract: In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
    Type: Application
    Filed: April 24, 2008
    Publication date: December 25, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Shingo Kameyama, Yasuhiko Nomura, Masayuki Hata
  • Publication number: 20080315221
    Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
    Type: Application
    Filed: June 16, 2008
    Publication date: December 25, 2008
    Inventors: Tadao Toda, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
  • Publication number: 20080310471
    Abstract: A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.
    Type: Application
    Filed: June 11, 2008
    Publication date: December 18, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Yasuyuki Bessho, Masayuki Hata, Hiroki Ohbo
  • Publication number: 20080298411
    Abstract: A nitride-based semiconductor laser device includes an optical waveguide extending substantially parallel to a [0001] direction of a nitride-based semiconductor layer, a forward end face located on a forward end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer and a rear end face located on a rear end of the optical waveguide and formed by a substantially (000-1) plane of the nitride-based semiconductor layer, wherein an intensity of a laser beam emitted from the forward end face is rendered larger than an intensity of a laser beam emitted from the rear end face.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 4, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventor: Masayuki Hata
  • Publication number: 20080291958
    Abstract: In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
    Type: Application
    Filed: May 23, 2008
    Publication date: November 27, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Shingo Kameyama, Yasuhiko Nomura, Masayuki Hata, Kyoji Inoshita
  • Publication number: 20080280445
    Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
    Type: Application
    Filed: July 14, 2008
    Publication date: November 13, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Takashi Kano, Tsutomu Yamaguchi, Hiroaki Izu, Masayuki Hata, Yasuhiko Nomura
  • Patent number: 7450622
    Abstract: A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: November 11, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Yasuhiko Nomura, Daijiro Inoue
  • Publication number: 20080267238
    Abstract: A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.
    Type: Application
    Filed: April 25, 2008
    Publication date: October 30, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Kunio Takeuchi, Yasumitsu Kunoh, Masayuki Hata
  • Publication number: 20080258156
    Abstract: In a light-emitting diode apparatus, light emitted from a principal plane of an emission layer has a plurality of unequal luminous intensities depending on the in-plane azimuth angle of the principal plane of the emission layer, and at least one of a light-emitting diode chip and a package has a structure of reducing difference in the intensity of light emitted from the package according to variation in the in-plane azimuth angle of a chip-arrangement surface.
    Type: Application
    Filed: September 28, 2007
    Publication date: October 23, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventor: Masayuki HATA
  • Publication number: 20080240187
    Abstract: A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.
    Type: Application
    Filed: March 30, 2008
    Publication date: October 2, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masayuki HATA, Kunio Takeuchi, Seiichi Tokunaga
  • Publication number: 20080224151
    Abstract: A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth.
    Type: Application
    Filed: February 28, 2008
    Publication date: September 18, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Masayuki Hata, Tatsuya Kunisato, Nobuhiko Hayashi
  • Publication number: 20080225920
    Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
    Type: Application
    Filed: March 13, 2008
    Publication date: September 18, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Saburo Nakashima, Yasuhiko Nomura, Masayuki Hata, Takenori Goto
  • Publication number: 20080219309
    Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
    Type: Application
    Filed: March 6, 2008
    Publication date: September 11, 2008
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Yasumitsu Kunoh, Yasuyuki Bessho
  • Publication number: 20080179601
    Abstract: A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
    Type: Application
    Filed: October 30, 2007
    Publication date: July 31, 2008
    Inventors: Tadao TODA, Tsutomu Yamaguchi, Masayuki Hata, Yasuhiko Nomura
  • Patent number: 7405096
    Abstract: Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
    Type: Grant
    Filed: March 16, 2005
    Date of Patent: July 29, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Takashi Kano, Tsutomu Yamaguchi, Hiroaki Izu, Masayuki Hata, Yasuhiko Nomura
  • Publication number: 20080130698
    Abstract: A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends.
    Type: Application
    Filed: November 30, 2007
    Publication date: June 5, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Yasuyuki BESSHO, Yasuhiko Nomura, Masayuki Hata
  • Patent number: 7376166
    Abstract: A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: May 20, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayuki Hata, Yasuyuki Bessho, Yasuhiko Nomura, Masayuki Shono, Seiji Kajiyama, Yoichi Tsuchiya