Abstract: A touch panel input system of the present invention includes a touch panel integrated liquid crystal display device (100) and an input pen (60) for carrying out an input with respect to the liquid crystal display device (100). The liquid crystal display device (100) includes a liquid crystal panel (20) that is provided with a plurality of light sensor elements (30) and a backlight (10) that is provided with an infrared LED (12) which emits infrared light. In the liquid crystal panel (20), an infrared light transmitting section (24a) for selectively transmitting light in an infrared region is provided above a corresponding one of the plurality of light sensor elements (30). An infrared light reflecting member (62) is provided at a tip of the input pen (60). This allows obtainment of a touch panel input system which enables detection with high accuracy.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends.

Abstract: A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.

Abstract: A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Abstract: A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Abstract: This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate.

Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Abstract: A light-emitting device capable of improving light extraction efficiency is provided. This light-emitting device comprises a support substrate set on a side opposite to a light emission surface and a semiconductor element layer, bonded to the support substrate, having a side surface inclined by a prescribed angle with respect to at least the normal of the light emission surface.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: A liquid crystal display device (100) of the present invention includes: a liquid crystal panel (20) including: an active matrix substrate (21); a counter substrate (22); and a liquid crystal layer (23) provided between the active matrix substrate (21) and the counter substrate (22); and a backlight (10) illuminating the liquid crystal panel. The liquid crystal display device (100) has an area sensor function for detecting an external input position, and further includes a reflectance changing section (50) that reduces a reflectance of light from the backlight (10) in response to application of pressure on a panel surface (100a). The reflectance changing section (50) is configured so that in a state where no pressure is applied on the panel surface (100a), an air layer (50c) is formed between two elastic films (50a and 50b) whereas in a state where pressure is applied on the panel surface (100a), the two elastic films (50a and 50b) contact each other.

Abstract: A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.

Abstract: A backlight unit (60) is provided in such a manner that light (L3) incident from the backlight unit (60) to a liquid crystal display element (20) in a diagonal direction that causes the light to be likely to be emitted from the liquid crystal display element (20) in a normal direction thereof has lower intensity than light (L2) incident from the backlight unit (60) to the liquid crystal display element (20) in another diagonal direction.

Abstract: A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

Abstract: A backlight unit (60) includes: a light guiding plate (64); and a diffusing sheet (70), the backlight unit (60) causing light exiting through a light exit plane (80) thereof to backlight a liquid crystal display element (20), the light exiting through the light exit plane (80), having a half width of not more than 44°.

Abstract: This semiconductor device includes a substrate, an underlayer formed on a main surface of the substrate, a first semiconductor layer and a second semiconductor layer. Unstrained lattice constants of the underlayer and the second semiconductor layer in a second direction are larger than a lattice constant of the substrate in the second direction in an unstrained state. Lattice constants of the underlayer and the second semiconductor layer in the second direction in a state of being formed on the main surface are larger than the lattice constant of the substrate in the second direction.

Abstract: A light-emitting device, having high light extraction efficiency, capable of obtaining diffused light is obtained. This light-emitting device comprises a light-emitting diode, a portion, formed on a plane substantially parallel to a light-emitting surface of the light-emitting diode, having a dielectric constant periodically modulated with respect to the in-plane direction of the plane substantially parallel to the light-emitting surface and a member provided on the side of the light-emitting surface of the light-emitting diode for diffusing light emitted from the light-emitting diode.