Abstract: A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %.

Abstract: A decoding device that allows for high precision decoding of LDPC codes by optimizing the quantization width includes a distribution determining unit that determines a distribution of noise superposed on data received by a receiving unit, a quantization width determining unit that determines the quantization width that is optimized so that the error probability after decoding becomes the minimum with respect to the noise distribution determined by the distribution determining unit or the noise distribution determined by the distribution determining unit becomes the maximum with respect to a given error probability after decoding, a quantizing unit that quantizes the probability distribution of the received value received by the receiving unit with a predetermined low bit number according to the determined quantization width, and a message determining unit that determines a message as information bits based on the probability distribution of the received value quantized by the quantizing unit.

Abstract: A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.

Abstract: The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B) is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.

Abstract: The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 ?m or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like.

Abstract: A decoding system and method for providing relatively high likelihood of obtaining at least two paths of getting to each decoding state from at least three paths. The system and method also selects a maximum likelihood path from the two paths, where a log likelihood of getting to a state in the decoder is determined by a soft-input value encoded with a trellis so as to provide at least three paths for getting to the state.

Abstract: In a coding apparatus and a decoding apparatus, the performance of codes is improved by optimizing a degree sequence and a quantization step size. The coding apparatus includes a degree sequence calculator for calculating a degree sequence indicating the distribution of the number of 1s in the parity check matrix, a parity check matrix generator for producing a parity check matrix on the basis of the degree sequence calculated by the degree sequence calculator, and an encoder for coding the input data using the parity check matrix generated by the parity check matrix generator. The degree sequence calculator optimizes the degree sequence such that when, in the decoding apparatus for decoding coded data, a received value and a message are represented by a small number of bits, the error probability after decoding is minimized for a given variance of noise or the allowable variance of noise is maximized for a given error probability after decoding.

Abstract: A decoder that receives, as input, probability information AMP/CR×yt. This probability information is obtained by dividing a channel value obtained by multiplication of received value yt and a predetermined coefficient AMP by the first additive coefficient CR for regulating the amplitude of the received value yt and the probability information 1/CA×APPt obtained by multiplying the a priori probability information APPt by the reciprocal of the second additive coefficient CA for regulating the amplitude of the a priori probability information APPt to a soft-output decoding circuit. The soft-output decoding circuit, which may be a large scale intergrated circuit, generates log soft-output CI×I?t and/or external information 1/CA×EXt using additive coefficients for regulating the amplitude of arithmetic operations in the inside of the soft-output decoding circuit.

Abstract: Error correction coding and decoding according to a serial concatenated modulation system are carried out under high code rate. A coding apparatus 1 comprises three convolutional coders 10, 30 and 50 for carrying out convolutional operation; two interleavers 20 and 40 for rearranging order of data input; and a multi-value mapping circuit 60 for carrying out mapping of a single point on the basis of a predetermined modulation system. The coding apparatus 1 carries out convolutional operation whose code rate is “?” as coding of extrinsic codes by a convolutional coder 10, and carries out convolutional operation whose code rate is “1” as coding of inner codes by a convolutional coder 50, and a multi-value modulation mapping circuit 60 applies mapping to a transmission symbol of a 8 PSK modulation system to output it as a single code transmission symbol.

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.

Abstract: The present invention relates to a decoding method and a decoder, a program, a recording-and-reproducing apparatus and a method, and a reproducing apparatus and a method that are suitable for decoding encoded data encoded by using a linear code on ring R. A low-density processing unit performs parity-check-matrix low-density processing, performs linear combination for rows of a parity check matrix included in an obtained reception word, and generates a parity check matrix according to the linear-combination result, thereby reducing the density of the parity check matrix used for decoding, at step S21. Then, at step S22, an LDPC decoding unit performs decoding by using a sum product algorithm (SPA) by using the parity check matrix whose density is reduced through the processing performed at step S21. Where the processing at step S22 is finished, the LDPC decoding unit finishes decoding for the reception word. The present invention can be used for an error-correction system.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH??(1) wherein each R is independently a hydrogen atom or an alkyl group of 1 to 6 carbon atoms. A process for manufacturing a semiconductor device comprises chemical mechanical polishing a semiconductor component, and cleaning the semiconductor component with the cleaning composition for semiconductor components. The cleaning composition exerts a high cleaning effect on impurities remaining on a polished surface of a semiconductor component after chemical mechanical polishing, and becomes little burden on the environment.

Abstract: The present invention relates to a method of embedding an additional layer of error correction into an error correcting code, wherein information is encoded into code words of said code over a first Galois field and wherein a number of code words rare arranged in the columns of a code block comprising a user data sub-block and a parity data sub-block In order to provide an additional layer of error correction that can be easily implemented without losing compatibility improving the error correction capabilities, a method is proposed comprising the steps of:—encoding the rows of at least said user data sub-block separately or in groups using a horizontal error correcting code over a second Galois field larger than said first Galois field to obtain horizontal parities,—embedding said horizontal parities as additional layer in said error correcting code.

Abstract: Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m2/g and less than 160 m2/g and an average secondary particle diameter of not less than 170 nm and not more than 250 nm and (A2) second fumed silica having a specific surface area of not less than 160 m2/g and an average secondary particle diameter of not less than 50 nm and less than 170 nm. Also disclosed is a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion. According to the chemical mechanical polishing aqueous dispersion and the chemical mechanical polishing method, a chemical mechanical polishing process wherein a barrier metal layer and a cap layer can be efficiently removed by polishing and damage to an insulating film material of a low dielectric constant present in the underlying layer is reduced can be carried out.

Abstract: A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

Abstract: The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.

Abstract: A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: To carry out error correction coding and decoding according to a serially concatenated coded modulation system with a small circuit scale and high performance. A coding apparatus 1 is designed so that an interleaver 20 interleaves order of bits so that all weights are coded by a convolutional coder 30 with respect to data comprising a series of 3 bits supplied from a convolutional coder 10; the convolutional coder 30 makes as small as possible the total value of the hamming distance of input bit between passes to be the minimum Euclidean distance with respect to data of 3 bits supplied from the interleaver 20; and a multi-value modulation mapping circuit 40 causes the hamming distance of input bits in the convolutional coder 30 as the distance between signal point on the I/Q plane is smaller to subject data of 3 bits supplied from the convolutional coder 30 to mapping.