Abstract: A method of registering press plates on plate cylinders used in a sheet-fed press for multicolor printing, in which register information is obtained by using edges of the press plates as references. Each press plate is stretched around a plate cylinder with its front edge and one side edge abutted against gripping references on the plate cylinder. A press plate register measuring device similarly uses the edges of the press plate as references, with the press plate in the same positional relationship as on the press cylinder. On the measuring device deviations between references marks on the plates and benchmark references are measured and utilized to adjust the position of the plate cylinders to bring the printing plates into registered printing positions.

Abstract: A coupling structure for a reversing mechanism of a printing press, having a fixed gear (18), a pivotable regulating gear (20), and a plurality of parallel tightening bolts (30) extending in a regularly spaced manner around a cylinder shaft (12) of the reversing mechanism. A one-way clutch (54) transmits limited tightening torque to the bolts (30) to hold gears (18) and (20) together in an engaged state, whereas in a release state, the bolts (30) are freely loosened. A center gear 56 having an internal gear (62) transmits torque to the one-way clutch from an external drive motor (80).

Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

Abstract: A photovoltaic device, wherein a non-crystalline semiconductor layer of one conductivity type formed on a single crystal or a polycrystalline semiconductor substrate of the opposite conductivity type is annealed thereby to change the non-crystalline semiconductor to a polycrystalline semiconductor, with a pn junction plane formed therebetween. The depth of the junction plane is 500 .ANG. or less from the light incident surface of the polycrystallized semiconductor. Moreover, the light incidence surface can be made uneven by increasing the growth rate of the non-crystalline semiconductor.

Abstract: A structure of an intermediate cylinder of a sheet-feed press is disclosed.The present invention comprises a main shaft 10, a front edge gripper holder 12 formed integrally with the main shaft 10, having a group of front edge grippers 20 aligned in an axial direction, and having an arcuate outer surface section, holding discs 24 disposed at both side portions of the main shaft 10 in such a fashion that the rotation thereof relative to the main shaft 10 can be adjusted, and a rear edge gripper holder 22 having a group of rear edge grippers 28 aligned in the axial direction between the holding discs 24, and having a sheet member 38 disposed similarly on the outer peripheral surfaces between the holding discs 24, having an arcuate section, and partially overlapping the outer surface of the front edge gripper holder 12.

Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.

Abstract: A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A gate electrode is formed positioned between the source electrode and the drain electrode. Insulation film is interposed between the gate electrode and the a-Si:H film. In a direct photo-CVD method using a low pressure mercury lamp, bandtail characteristics energy of the a-Si:H film is made less than 40 meV by controlling a decomposition region of a reaction gas, that is, the distance between the glass substrate and a gas supply port, whereby a thin film transistor having a good response is obtainable.

Abstract: A photovoltaic device capable of obtaining a high open circuit voltage, in which crystallization of a semiconductor is accelerated from the first stage of formation thereof such that a thin layer of the semiconductor is crystallized, by doping an electrode disposed between the semiconductor and a substrate with an element which reacts with an element in the semiconductor to accelerate crystallization of the semiconductor or by disposing a film made from a compound doped with said element between the semiconductor and the substrate.

Abstract: A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.

Abstract: An electrostatic recording apparatus includes a photosensitive drum which is charged at +700 V by a first charger. Intensity of the light emitted from an LED array that is downstream from the first charger is adjusted such that a light image having strong intensity and/or a light image having weak intensity can be irradiated to the photosensitive drum. A surface voltage of a portion where the light image having weak intensity is irradiated becomes +400 V. A surface voltage of a portion where the light image having strong intensity is irradiated becomes +100 V. The photosensitive drum is charged at -400 V in the reverse polarity opposite to that of the first charger by a second charger which is arranged downstream from the LED array. As a result, electrostatic latent images of three gradations having voltages of +300 V, 0 V and -300 V respectively are formed on the photosensitive drum.

Abstract: A recording head comprises a magnetically permeable substrate, a superconducting film formed on one side of said substrate, a means for producing a uniform magnetic field sustantially perpendicular to a surface of the superconducting film, and a means for locally destroying the superconductivity of the superconducting film so as to produce a pattern of normal conducting portions in the area of the superconducting film where the magnetic field is applied. A recording device comprises a recording head for producing a pattern of a magnetic field on a recording medium, a toner supply unit arranged in face-to-face relationship with the recording head at a spaced short distance from the head to form a visible pattern of magnetic toners on the recording medium, and a fixing unit for fixing the magnetic toners on the recording medium to complete a record.

Abstract: A photovoltaic device comprises a photoactive layer for generating carriers when light is applied thereto, and a window layer containing at least silicon and hydrogen and provided on the light incidence side of the photoactive layer. Hydrogen concentration in the window layer is higher in the layer's light incidence side than in the side facing the photoactive layer. Thus, the light incidence side of the window layer has a rough surface.

Abstract: In an apparatus having a CCD for compressing and/or expanding the time base of an input signal; a first two-phase transfer clock pulse signal made up of first and second pulse train signals having a first period and arranged to be 180.degree. out of phase with each other is used for driving the CCD while writing the input signal into the CCD, a second two-phase transfer clock pulse signal made up of third and fourth pulse train signals having a second period and arranged to be 180.degree. out of phase with each other is used for driving the CCD while reading from the CCD a signal which is produced from the input signal with its time base compressed or expanded, and the pulse width of the first pulse train signal is made virtually equal to the pulse width of the third pulse train signal and such pulse width is selected to be smaller than one-half of the smaller of the first and second periods.

Abstract: The present invention relates to a photovoltaic device using hydrogenated amorphous silicon as a photoactive layer, wherein the ratio of the number of silicon atoms bonded to hydrogen atoms to the total number of silicon atoms (expressed as a percentage) is 1% or less and the density of dangling bonds is 1.times.10.sup.17 cm.sup.-3 or less. Accordingly, the device of the present invention has the following advantages: the cost can be reduced by forming a thinner layer, the area of the photo-active layer can be increased, the efficiency of photo-electric conversion is improved, and photo-deterioration is reduced.

Abstract: An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm.

Abstract: A photovoltaic device comprises a semiconductor layer of hydrogenated amorphous silicon for photoelectric conversion, in which the proportion of silicon atoms bonded to two hydrogen atoms to all the silicon atoms is not more than 1%.

Abstract: A reversing gripper apparatus of a one side/perfecting printing press is disclosed. This reversing gripper apparatus comprises a receiving portion wherein a gripper pad fixed to the external circumference of a reversing cylinder grips a sheet of paper in combination with gripper members and a space for withdrawal, the gripper members comprise a combination of a master gripper provided on a common shaft and an auxiliary gripper opposed to the master gripper, the master gripper is formed with a width sufficient to cover the receiving portion of the gripper pad and the point of the auxiliary gripper at the same time and is controlled by a common shaft, and the auxiliary gripper has such a width as to be partly opposed to the width of the master gripper and is controlled with the common shaft as the center. By adopting this structure, the gripping function, register accuracy, and the gripping force of the reversing gripper apparatus are greatly increased.

Abstract: A sheet drawing device for a sheet-fed rotary press comprises a pair of adjusting gears adjustably mounted on a main shaft, a plurality of segment arms rotatably mounted on the main shaft, a bearing block adjustably mounted on each of the segment arms, which is pivotably mounted for adjustment about an axis perpendicular to the bearing axis of the bearing block, a sheet-drawing roll journaled in each bearing block, a plurality of fixtures secured to a gripper shaft which is pivotably mounted in the adjusting gears, each fixture being resiliently connected to a guide which is rotatably mounted on the gripper shaft and which carries a freely rotatable trailing-end gripping roller that is engageable with one of the sheet-drawing rolls, means for controlling pivoting of the gripper shaft to bring the trailing-end gripping rollers into and out of sheet gripping engagement with the sheet-drawing rolls, a second gripper shaft pivotably mounted in the adjusting gears, on which are secured a plurality of driving arms

Abstract: An adjusting device for sheet reversing in a sheet-fed rotary press comprises a reversing cylinder which is driven by a drive shaft and carries a plurality of sheet grippers, a rotary drum carrying a plurality of leading-end grippers, a rotary assembly carrying a plurality of trailing-end grippers, which is concentric with said drum, a flange fixed to said drive shaft, a first drive gear fixed to said flange, a second drive gear which is adjustably attached to said flange and has a driving connection with said rotary assembly, a third drive gear which is adjustably attached to said flange and has a driving connection with said rotary drum, and means for manually rotating said reversing drive cylinder through said first gear, for selectively adjusting the angular position of attachment of the second and third gears to said flange.