Abstract: A plurality of measuring units each comprising a dielectric block, a metal film layer which is formed on a surface of the dielectric block and a sample holder are supported on a support. The support is moved by a support drive means to bring in sequence the measuring units to a measuring portion comprising an optical system which projects a light beam emitted from a light source, and a photodetector which detects attenuation in total internal reflection by detecting the intensity of the light beam which is reflected in total internal reflection at the interface between the dielectric block and the metal film layer. In this measuring apparatus, lots of samples can be measured in a short time.

Abstract: In a sensor: a thin film is formed on a face of the dielectric block and in contact with a specimen; a semiconductor laser unit as a light source emits a light beam; an optical system injects the light beam into the dielectric block so that the light beam is incident on a boundary between the dielectric block and the thin film at a plurality of incident angles which are greater than a critical angle for total reflection; and a light detecting unit detects a state of attenuated total reflection by measuring the intensity of the light beam totally reflected from the boundary. The semiconductor laser unit is driven with a driving current on which a high frequency component is superimposed.

Abstract: A sensor chip comprises a layer-shaped base body, which has a plurality of fine holes formed in one surface, and fine metal particles, each of which is loaded in one of the fine holes of the base body. At least a part of each of the fine metal particles is exposed to a side of the layer-shaped base body, which side is more outward than the one surface of the layer-shaped base body. The layer-shaped base body may be constituted of anodic oxidation alumina. The sensor chip constitutes a sensor utilizing localized plasmon resonance, with which a state of binding of a sensing medium with a specific substance is capable of being detected quickly and with a high sensitivity.

Abstract: A measuring apparatus for measuring the state of attenuated total reflection over time for a single measuring unit without being affected by the change in measuring conditions arising from replacement and resetting of the sample. A light beam is entered into the interface between a dielectric block and a metal film having a dielectric film thereon at various incident angles within the angle range that creates two or more dark lines due to attenuated total reflections, and the variation in the positions of other dark lines are measured with reference to the dark line having the least positional variation among them.

Abstract: Disclosed herein is a sensor utilizing attenuated total reflection. The sensor is equipped with a prism, a metal film formed on a surface of the prism, an optical system for making a light beam enter the prism at various angles of incidence so that the condition for total internal reflection is obtained at the interface between the prism and the metal film, and photodetectors for detecting the light beam satisfying total internal reflection at the interface. In the sensor, a super luminescent diode is employed as a light source that emits the light beam.

Abstract: A small-sized measuring apparatus having a stray light suppressing capability for detecting the distribution of optical intensities on the cross section of a light beam having a predetermined wavelength contained in a light beam reflected from a measuring surface by entering a collimated light beam having a large cross sectional area into the measuring surface. A collimated light beam having a sufficient cross sectional area is entered into the interface between a dielectric block and a thin metal film formed on the dielectric block at an angle that satisfies the conditions of total reflection. A light beam having a predetermined wavelength is selected from the light beam totally reflected at the interface to detect the distribution of optical intensities for the selected light beam by the wavelength selecting section capable of eliminating stray light.

Abstract: In a near-field exposure system: a light source emits exposure light having a predetermined wavelength and being unpolarized; a polarizer plate linearly polarizes the exposure light; an exposure mask which has a pattern of openings each having a dimension smaller than the wavelength of the exposure light is placed at such a position that the exposure light is applied to the exposure mask; an exposure table holds a photosensitive material sensitive to the exposure light, at a position which near-field light emerging from the openings reaches; and a polarizer-plate holding device holds the polarizer plate in such a manner that the polarizer plate can be moved between first and second positions, where the first position is in an optical path of the exposure light from the light source to the exposure mask, and the second position is outside the optical path.

Abstract: A plurality of measuring units each comprising a dielectric block, a metal film layer which is formed on a surface of the dielectric block and a sample holder are supported on a support. The support is moved by a support drive means to bring in sequence the measuring units to a measuring portion comprising an optical system which projects a light beam emitted from a light source, and a photodetector which detects attenuation in total internal reflection by detecting the intensity of the light beam which is reflected in total internal reflection at the interface between the dielectric block and the metal film layer. In this measuring apparatus, lots of samples can be measured in a short time.

Abstract: A surface plasmon optical modulator element includes a dielectric material block disposed so that light-to-be-modulated travels through the interior of the dielectric material block and impinges upon one surface thereof at an angle of total reflection, a metal film formed on the surface of the dielectric material block, a photo-functional film which is formed on the metal film and whose refractive index is changed upon exposure to light, and a modulating light source which projects modulating light onto the photo-functional film. The photo-functional film is formed of dye which contains an electron donor and an electron acceptor so that a photoelectron can be transferred therebetween.

Abstract: A sensor utilizing an evanescent wave and comprising a light source for emitting a light beam and a measuring chip formed into the shape of a well. The measuring chip has a dielectric block and a thin film layer formed on one surface of the dielectric block. The sensor also includes an optical system for making the light beam enter the dielectric block at angles of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer. The sensor further includes a sample supply-discharge unit which is detachably installed within the measuring chip. The sample supply-discharge unit is used for continuously supplying the sample onto the surface of the thin film layer and continuously discharging the supplied sample from the surface of the thin film layer.

Abstract: A measuring apparatus includes a dielectric block, a film layer which is formed on a first face of the dielectric block and is brought into contact with a sample, an optical system which causes a light beam to enter the dielectric block through a second face so that the light beam is reflected in total internal reflection at the interface of the dielectric block and the film layer and various angles of incidence of the light beam to the interface can be obtained, and a photodetector which detects the intensity of the light beam which is reflected in total internal reflection at the interface and goes outside the dielectric block through a third face thereof. A measuring chip includes a single dielectric block having all the first to third faces and the film layer integrally formed on the first face of the dielectric block.

Abstract: A near-field optical recording apparatus for recording information in a recording medium, and a near-field optical recording and regenerating apparatus for recording information in a recording medium, and reading the information recorded in the recording medium. The apparatuses contain a light source which generates recording light; a micro-aperture probe which has at an end thereof a light-pass aperture having a diameter smaller than a wavelength of the recording light, receives from the other end thereof the recording light, and radiates near-field light on a portion of the recording medium to record the information; and an assistive heating unit which is capable of assistively heating at least the above portion of the recording medium for a duration corresponding to radiation of the near-field light on the portion.

Abstract: A surface plasmon sensor includes a dielectric block, a metal film which is formed on one face of the dielectric block and is brought into contact with a sample, a light source emitting a light beam and an optical system which causes the light beam to enter the dielectric block and converges the light beam on the interface of the dielectric block and the metal film so that components of the light beam impinge upon the interface at various angles including angles of total reflection. An array of a plurality of photodetector elements extending in a predetermined direction and positioned detect is positioned so that the components of the light beam reflected at the interface in total reflection at various angles are received by the respective photodetector elements.

Abstract: A mask for exposure 1 having an aperture in a prescribed pattern formed on one surface and subjected to proximity field exposure in a state kept in contact with the surface of a wafer 2. The mask 1 is made of a transparent material such as glass or quartz glass. The mask 1 forms a circular shape with a thickness of 1 mm or less, preferably 0.1-0.5 mm.

Abstract: In a measuring method utilizing the phenomenon of attenuation in total internal reflection in which a light beam is caused to enter a dielectric block provided with a film layer to be brought into contact with a sample so that total internal reflection conditions are satisfied at the interface of the dielectric block and the film layer and various angles of incidence of the light beam to the interface of the dielectric block and the film layer can be obtained, and the intensity of the light beam reflected in total internal reflection at the interface is detected, the light beam is caused to intermittently impinge upon the dielectric block.

Abstract: In a near-field exposure system: a light source emits exposure light having a predetermined wavelength and being unpolarized; a polarizer plate linearly polarizes the exposure light; an exposure mask which has a pattern of openings each having a dimension smaller than the wavelength of the exposure light is placed at such a position that the exposure light is applied to the exposure mask; an exposure table holds a photosensitive material sensitive to the exposure light, at a position which near-field light emerging from the openings reaches; and a polarizer-plate holding means holds the polarizer plate in such a manner that the polarizer plate can be moved between first and second positions, where the first position is in an optical path of the exposure light from the light source to the exposure mask, and the second position is outside the optical path.

Abstract: As shown in FIG. 1A, a first resist film 2 comprising organic high molecules and a second resist film 3 comprising a photosensitive material are sequentially applied to a substrate 1 by the spin coat method or the spray method for forming a two-layer resist. Then, a mask 4 with which a metallic fine opening pattern 6 is formed on a mask substrate 5 comprising a dielectric, such as glass, is tightly contacted with the two-layer resist. Then, light is projected onto the back of the mask substrate to carry out exposure with near field light 7 which is effused from the opening portions of the mask 4 where no metal is formed. Then, a pattern is formed by processing the second resist layer 3 for development with a developing solution.

Abstract: The invention relates to a lock for doors of housings or cabinets with particularly narrow frame profiles, comprising a bolt mechanism which is longitudinally moveably guided in the frame profile, and a door plate which can be fixed on the outside of the door leaf, said door plate having a first door plate area (11) with the handle (13) located therein and a second door plate area (12) in which the locking device is located.

Abstract: Disclosed herein is a sensorutilizing attenuated total reflection. The sensor is constructed of a measuring chip, an optical system, and a measuring section. The measuring chip is equipped with a dielectric block, a thin film layer formed on the dielectric block, and a liquid-sample holding portion for holding a liquid sample. The optical system is used to make a light beam enter the dielectric block at various angles of incidence so that a total internal reflection condition is satisfied at an interface between the dielectric block and the thin film layer. The measuring section measures the state of attenuated total reflection, based on the intensity of the light beam totally reflected at the interface. The liquid-sample holding portion has an opening at its top surface. The sensor further has a lid supply mechanism for placing a lid on the opening to prevent evaporation of the liquid sample.

Abstract: A measuring apparatus is disclosed which includes a measuring unit equipped with a dielectric block and a thin film layer; an incidence system for making a light beam enter the dielectric block so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer; and a photodetector for receiving the light beam totally reflected at the interface. The measuring unit is measured a plurality of times, and a change in the state of attenuated total reflection during the plurality of measurements is detected. The sensor further includes a tilt measurement section for measuring the longitudinal tilt of the interface which changes the incidence angles during the plurality of measurements, and a calculating section for obtaining a measured value in which errors due to the longitudinal tilt have been corrected.