Abstract: A semiconductor power device and a method for manufacturing the same is provided. The semiconductor power device includes a semiconductor body including a conductive substrate and an epitaxial layer of a first charge type grown on the conductive substrate, and one or more inner wells of a second charge type different from the first charge type in an active area of the semiconductor power device. At least some of the one or more inner wells of the second charge type are formed using at least two ion implantation steps. One step is dedicated to forming the inner wells of the second type whereas one or more further ion implantation steps are simultaneously used for forming a respective JTE structure and for increasing a dopant concentration of at least one well of the second charge type.

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

Abstract: An MPS diode and a manufacturing method thereof is provided. The MPS diode includes a semiconductor body with an active area, that includes a drift region of a first conductivity type, and wells of a second type different from the first type, the wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the assembly forming Schottky contacts together with the drift region and the respective Ohmic contacts with the wells. The drift region includes a doped region surrounding the wells, the doped region having a higher dopant concentration than a remainder of the drift region. The dopant concentration in the doped region decreases in a first direction from a center of the doped region to an edge of the doped region.

Abstract: Aspects of the present disclosure generally relate to an MPS diode and a manufacturing method therefor. The MPS diode includes a semiconductor body including an active area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second conductivity type different from the first conductivity type, the plurality of wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the plurality of wells. A spacing between adjacently arranged wells increases in an outward direction from a center of the active area.

Abstract: An MPS diode and a manufacturing method is provided. The diode includes a semiconductor body including an active area and an adjacent termination area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second type different from the first conductivity type, the wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the wells. The drift region includes a doped region surrounding each of the wells and having a higher dopant concentration than a remainder of the drift region, and the doped region is spaced apart from the termination area.

Abstract: Aspects of the present disclosure generally relate to an MPS diode and a manufacturing method therefor. The MPS diode includes a semiconductor body including an active area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second conductivity type different from the first conductivity type, the plurality of wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the plurality of wells. A spacing between adjacently arranged wells increases in an outward direction from a center of the active area.

Abstract: Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.

Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (612a), (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612

Abstract: A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.

Abstract: A semiconductor product, including: a base region doped with a first conductivity type; a plurality of stripe regions doped with a second conductivity type, provided on an upper surface of the base region, and the second conductivity type is different from the first conductivity type; a plurality of cell regions doped with the second conductivity type, provided on the upper surface of the base region; and a metal layer arranged on the upper surface of the base region, so that the metal layer defines a Schottky barrier with the base region and covers the plurality of stripe regions and the plurality of cell regions; and each cell region of a majority of the plurality of cell regions contacts at least one neighboring stripe region of the plurality of stripe regions and the stripe regions and the cell regions extend into the base region to different depths.

Abstract: In various embodiments, the present disclosure provides devices and systems for detecting the blood pressure of a user. In one embodiment, an optoelectronic device includes an array of avalanche photodiodes operating in Geiger mode. A tunable optical filter is optically coupled to the array and receives a light beam reflected from a vascularized tissue of the user, in response to the vascularized tissue being illuminated by an optical source.

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

Abstract: A light pixel projection module includes a pixel light source, a light pixel projection assembly for projecting a light pixel generated by the light pixel generating assembly, and an optical time-of-flight (ToF) measurement assembly for measuring a distance between the projection module and an external object. The ToF measurement assembly includes a ToF light source, a beam splitting optical device for splitting an incident light beam into a reflected main beam component and a transmitted and attenuated secondary beam component, and an APD-based ToF photodetector for light detection. The beam splitting optical device is arranged in the optical path of light beams emitted by the ToF light source such that it splits each light beam emitted by the ToF light source into a main beam component leaving the module and heading towards the external object and a secondary beam component remaining within the module and hitting the ToF photodetector.

Abstract: In an embodiment an optoelectronic apparatus includes a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side, a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier, at least one outer wall which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides, a filter covering the upper side of the light detector, the filter having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the second wavelength region and a first material layer covering the filter.

Abstract: An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

Abstract: An integrated photodetecting optoelectronic semiconductor component configured to deliver an output signal indicative of the intensity of light irradiating the component. The component may include a SPAD-based main detection device configured to detect incoming photons and to deliver an output signal based on the detected photons. The component may also include a SPAD-based reference detection device proximate to the main detection device where the reference detection device has the same electro-optical behaviour as the main detection device, is configured to detect incoming photons, configured to deliver a reference signal based on the detected photons, and has a light inlet for incoming photons. The component may also include a neutral density filtering device and a controller configured to determine a nominal output signal, compare the nominal output signal with the output signal delivered by the main detection device, and adjust an operating parameter based on the comparison.

Abstract: An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus