Abstract: An optoelectronic semiconductor chip comprises a semiconductor body including a plurality of active regions configured to generate electromagnetic radiation, the plurality of active regions being arranged in a horizontal plane. The optoelectronic semiconductor chip further comprises a conductive member configured to electrically connect at least two adjacent ones of the active regions with each other, the conductive member being arranged over a first main surface of the semiconductor body. The optoelectronic semiconductor chip further comprises a contact element extending from the first main surface to a second main surface of the semiconductor body and being electrically connected to at least one of the active regions via a contact material over the first main surface, and an optical element arranged over the first main surface of the semiconductor body.

Abstract: In an embodiment, PhotoPlethysmoGraphy (PPG) signals are processed by detecting peaks and valleys in the PPG signal, segmenting the PPG signal to provide a time series of PPG waveforms located between two subsequent valleys in the PPG signal, applying to the waveforms in the time series pattern recognition with respect to a reference PPG waveform pattern produced based on a mathematical model of the PPG signal by assigning to the waveforms in the time series a recognition score. A resulting PPG signal is produced by retaining the waveforms in the time series having an assigned recognition score reaching a recognition threshold, and discarding the waveforms in the time series having an assigned recognition score failing to reach the recognition threshold.

Abstract: A semiconductor laser device is specified comprising an edge emitting semiconductor laser diode, which emits laser light along a horizontal direction during operation, a reflector element, which deflects a first part of the laser light in a vertical direction, while a second part of the laser light continues to propagate in the horizontal direction, and a detector element, which is arranged at least partly in a beam path of the second part of the laser light. An optoelectronic beam deflection element for a semiconductor laser device is furthermore specified.

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Abstract: In an embodiment, PhotoPlethysmoGraphy (PPG) signals are processed by detecting peaks and valleys in the PPG signal, segmenting the PPG signal to provide a time series of PPG waveforms located between two subsequent valleys in the PPG signal, applying to the waveforms in the time series pattern recognition with respect to a reference PPG waveform pattern produced based on a mathematical model of the PPG signal by assigning to the waveforms in the time series a recognition score. A resulting PPG signal is produced by retaining the waveforms in the time series having an assigned recognition score reaching a recognition threshold, and discarding the waveforms in the time series having an assigned recognition score failing to reach the recognition threshold.

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

Abstract: A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm?3.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

Abstract: A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

Abstract: A system for detecting the concentration of metal particles of at least one first material, which includes a detector with: a semiconductor body including a cathode region, delimited by a front surface; and an anode structure made of metal material, which extends over a part of the cathode region, leaving part of the front surface exposed. The anode structure and the part of the cathode region form a first contact of a Schottky type. The exposed part of the front surface can access the metal particles.

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.