Abstract: Semiconductor-manufacturing-apparatus workpiece holder whose wafer-retaining surface is superior in isothermal properties, and that is suitable for use in thermosetting of photolithographic photoresists in coater/developers, and in baking of low dielectric constant, i.e. low-k, insulating films. The workpiece holder is made up of a wafer holder 1, and a support member 4 that supports the wafer holder 1, and features the thermal conductivity of the support member 4 being lower than the thermal conductivity of the wafer holder 1. The wafer holder 1 and the support member 4 either are not joined, or if joined are made to have a difference in thermal expansion coefficient of 2.0×10?6/° C. or less. The chief component of the wafer holder 1 preferably is AlN, and of the support member 4, mullite.

Abstract: A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw on at least one surface of a ceramics sintered base plate from end to end using a flawing tool and dividing the ceramics sintered base plate along the flaw by applying an external force. It is preferred that a blade edge portion of the flawing tool is made of a cemented carbide or diamond. By the method of the invention, the ceramics sintered base plate can be easily divided, and ceramics base plates excellent in dimensional accuracy are obtained without lowering the strength thereof.

Abstract: A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).

Abstract: According to the present invention, a wafer holder is supported by support pieces mounted on a pedestal and is installed within the processing chamber of a semiconductor manufacturing device, wherein the lift pins are set up anchored to the semiconductor-manufacturing-device chamber and the pedestal is driven vertically, thereby running the wafer holder up/down to thrust the lift pins out from, or retract them into, the top side of the wafer holder, which makes it possible to dechuck wafers from and pocket them into the holder. Consequently, leveling the height of the tip ends of the plurality of lift pins is facilitated and synchronization problems are completely eliminated besides, which thus makes it possible to prevent wafer drop-off during wafer dechucking/pocketing. And since a mechanism for synchronously driving the plural lift pins up/down is unnecessary, the device overall can be made more compact.

Abstract: Enhances the durability of electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a susceptor ceramic heater-block, affords for semi-conductor manufacturing equipment a susceptor in which incidents of inter-electrode shorting are prevented, and makes available semiconductor manufacturing equipment in which the susceptor is installed. Rendering as unitary articles the electrodes for supplying electricity to electroconductive components formed in the interior and/or on the surface of a ceramic heater-block contributes to improved electrode endurance. Further, setting up a tubular piece encompassing each electrode contributes to preventing incidents of shorting. Introducing inert gas into the interior of the tubular pieces further improves the reliability of the electrodes.

Abstract: Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

Abstract: Affords a holder for use in semiconductor or liquid-crystal manufacturing devices—as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed—in which temperature uniformity in the processed-object retaining face is heightened. Configuring the holder with, furnished atop a ceramic susceptor, a composite of a ceramic and a metal improves the temperature uniformity in the holder's processed-object retaining face and makes for curtailing the generation of particulates and other contaminants. In addition, putting a coating on at least the retaining face improves the durability of the holder. Installing a holder of this sort in a semiconductor manufacturing device or a liquid-crystal manufacturing device contributes to making available semiconductor or liquid-crystal manufacturing devices whose productivity and throughput are excellent.

Abstract: A heating device for manufacturing semiconductor capable of uniformly heating a wafer or other materials to be treated, and in particular a heating device in a coater-developer used for heat-hardening of resin film for photolithography and for heat-calcining of low-dielectric constant insulating film, is provided.

Abstract: Wafer holder for semiconductor manufacturing and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein the isothermal rating of its wafer-carrying surface is enhanced. In the wafer holder having a wafer-carrying surface, by making the diameter a of the wafer holder wafer-carrying surface not greater than the diameter b of the surface on its side opposite the wafer-carrying surface, the temperature distribution superficially in a wafer can be brought to within ±0.5%. Moreover, by making b−a ≧50 □m, the temperature distribution can be brought to within ±0.4%. The wafer holder is preferably a ceramic susceptor.

Abstract: Temperature gauge, and ceramic susceptors and semiconductor manufacturing equipment utilizing the temperature gauge, in which the thermocouple may be easily replaced even if damaged, and in which heat from the temperature-gauging site is readily transmitted to the temperature-gauging contact, shortening time until the measurement temperature stabilizes. A temperature-gauging contact (12) in the tip of the thermocouple contacts, in an exposed-as-it-is state, a temperature-gauging site on a ceramic susceptor (1), and by means of a circular cylindrical-shaped retaining member (11) screwed into female threads in the ceramic susceptor (1) is detachably pressed upon and retained against the ceramic susceptor. Thermocouple lead lines (13), passing through a through-hole (14) in the retaining member (11), stretch from one end face to the other end face thereof. The retaining member may be provided with a flange having threaded holes and screwlocked into female screws in the ceramic susceptor.

Abstract: Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.

Abstract: Ceramic susceptor having a processed-object retaining face—and semiconductor as well as liquid-crystal manufacturing apparatuses in which the susceptor is installed—in which temperature uniformity in the surface of an object being processed on the susceptor is enhanced. Forming a resistive heating element in the susceptor surface on other than its processed-object retaining side, or on an internal surface of the susceptor, and forming a lead circuit for supplying electricity to the resistive heating elements in a surface separate from the surface on which the resistive heating element is formed, allows the temperature uniformity of the susceptor to be enhanced and enables uniformization of the temperature distribution in the processed-object retaining face.

Abstract: Wafer holder and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein incidence of warping and cracking when the wafer holder is heated is slight. In the wafer holder having a wafer-carrying surface, electrical circuitry consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder; and by rendering pores present in the circuitry, the incidence of warping and cracking can be made very slight. The electrical circuitry is preferably any of an electrode circuit for an electrostatic chuck, a resistive-heating-element circuit, an RF-power electrode circuit, and a high-voltage-generating electrode circuit.

Abstract: Wafer holder for semiconductor manufacturing and semiconductor manufacturing device in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein the isothermal rating of its wafer-carrying surface is enhanced. In the wafer holder having a wafer-carrying surface, a shaft that supports the wafer holder is joined to the wafer holder; by making the in-shaft heat capacity of electrodes for supplying power to an electrical circuit formed either on a surface other than the wafer-carrying surface of the wafer holder, or else inside it, 10% or less of the heat capacity of the region of wafer holder that corresponds to the shaft, the temperature distribution in the wafer surface can be brought within an isothermal rating of ±1.0%. The electrical circuit formed in the wafer holder is preferably at least a resistive heating element.

Abstract: Wafer holder for semiconductor manufacturing and semiconductor manufacturing equipment in which the holder is installed, wherein films may be deposited uniformly over the entire surface of wafers and the generation of particles is slight. In the wafer holder, which has a wafer-carrying surface, the form of an RF power-generating electrode circuit formed in the wafer holder is round, and by making the circuit diameter 90% or more of the diameter of wafers that the wafer holder carries, wafer holders and semiconductor manufacturing equipment with which films whose thickness distribution is uniform are deposited can be realized. Alternatively, rendering the distance between the periphery of the RF-generating electrode circuit and the periphery of the wafer holder longer than the distance separating the electrode circuit from the wafer-carrying surface enables the realization of wafer holders and semiconductor manufacturing equipment wherein the generation of particles is slight.

Abstract: A holder for semiconductor manufacturing equipment is provided, in which electrical leakage and sparks do not occur across the electrode terminals and lead wires to supply power to a resistive heating element embedded in a holder, and the thermal uniformity in the holder is within ±1.0%.

Abstract: Wafer holder for semiconductor manufacturing and semiconductor manufacturing device in which the holder is installed, the wafer holder having a wafer-carrying surface whose wafer-retaining face has an enhanced isothermal rating. In the wafer holder having a wafer-carrying surface, multiple nubs having a flat portion are formed on the wafer-carrying surface; and by making the surface area of the flats on the nubs 70 mm2 or less per nub, distribution in obverse-surface temperature of a wafer set in place on the wafer holder can be brought within ±1.0%. If moreover the per-nub flat surface area is 30 mm2 or less, the temperature can be brought within ±0.5%. In addition, the total surface area of the flats on the nubs preferably is 40% or less of the wafer surface area, inasmuch as the incidence of trouble when de-chucking the wafers can be kept under control.

Abstract: Affords holders for semiconductor or liquid-crystal manufacturing devices—and semiconductor manufacturing devices in which the holders are installed—in which temperature uniformity in the processed-object retaining face of their resistive-heating-element containing ceramic susceptor is enhanced. By arranging a metal plate on a resistive-heating-element containing ceramic susceptor opposite its processed-object retaining side, the surface temperature of a semiconductor wafer or LCD glass being retained on the susceptor can be made uniform. Although simply setting the metal sheet on the ceramic susceptor is efficacious, fastening it by bonding, screws, snug-fitting, or vacuum adhesion further enhances the efficacy.

Abstract: Affords for semiconductor manufacturing devices a wafer holder and a semiconductor manufacturing device in which it is installed, where in the wafer holder, which has a wafer-carrying side, the isothermal quality of its wafer-carrying side is enhanced. A shaft that supports the wafer holder having a wafer-carrying side is joined to the wafer holder, wherein by making a distance a between the center axis of the shaft and the axial center of the wafer-carrying side 5% or less of the diameter L of the wafer-carrying side, the temperature distribution in the surface of a wafer set into place on the holder can be brought to within ±1.0%. Moreover, making the distance a 1% or less of the diameter L enables the temperature distribution to be brought to within ±0.5%.

Abstract: Wafer holder for semiconductor manufacturing and semiconductor manufacturing device in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein the isothermal rating of its wafer-carrying surface is enhanced. In the wafer holder having a wafer-carrying surface, by making the spacing of electrodes for supplying power to electrical circuits formed either on a surface other than the wafer-carrying surface of the wafer holder, or else inside it, 10% or more of the wafer holder thickness, the temperature distribution in the wafer-carrying surface can be brought to within ±1.0%. The electrical circuits can be heater circuits, electrostatic-chuck electrode circuits, RF electrode circuits, and high-voltage electrode circuits. One or more metals selected from the group being tungsten, molybdenum and tantalum preferably are incorporated into the portion of the power-supply electrodes that is directly connected to the circuits.