Patents by Inventor Mathew Philip
Mathew Philip has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11980110Abstract: Insulated phase change memory devices are provided that include a first electrode; a second electrode; a phase change material disposed in an electrical path between the first electrode and the second electrode; and a porous dielectric configured to concentrate heat produced by a reset current carried through the phase change material between the first electrode and the second electrode to mitigate an amount of heat that escapes from the phase change material. The porous dielectric may be an inherently porous dielectric material or a dielectric material in which porous structures are induced during fabrication. Methods of fabrication of such devices are also provided.Type: GrantFiled: September 20, 2021Date of Patent: May 7, 2024Assignee: International Business Machines CorporationInventors: Timothy Mathew Philip, Anirban Chandra, Kevin W. Brew, Lawrence A. Clevenger
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Publication number: 20240130243Abstract: Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.Type: ApplicationFiled: October 17, 2022Publication date: April 18, 2024Inventors: Timothy Mathew Philip, Ching-Tzu Chen, Kevin W. Brew, JIN PING HAN, Injo Ok
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Publication number: 20240081159Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.Type: ApplicationFiled: September 2, 2022Publication date: March 7, 2024Inventors: Ching-Tzu Chen, Kevin W. Brew, JIN PING HAN, Timothy Mathew Philip, Injo Ok
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Publication number: 20240074336Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.Type: ApplicationFiled: August 24, 2022Publication date: February 29, 2024Inventors: Injo Ok, Timothy Mathew Philip, Jin Ping Han, Ching-Tzu Chen, Kevin W. Brew, Lili Cheng
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Patent number: 11889773Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.Type: GrantFiled: February 22, 2023Date of Patent: January 30, 2024Assignee: International Business Machines CorporationInventors: Kevin W. Brew, Injo Ok, Jin Ping Han, Timothy Mathew Philip, Matthew Joseph BrightSky, Nicole Saulnier
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Publication number: 20240008374Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.Type: ApplicationFiled: June 30, 2022Publication date: January 4, 2024Inventors: Kevin W. Brew, Timothy Mathew Philip, JIN PING HAN, Ching-Tzu Chen, Injo Ok
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Publication number: 20230392046Abstract: A tape comprising: a backing layer; and an epoxy resin layer adhered to a first surface of the backing layer in a spiral pattern, the first surface providing a first level of adherence to the epoxy resin layer so that when the epoxy resin layer is applied to a surface the backing layer can be removed from the epoxy resin layer.Type: ApplicationFiled: October 21, 2021Publication date: December 7, 2023Inventors: Joseph Gary Elford, Mathew Philip Rutt
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Publication number: 20230371405Abstract: A structure comprising a top electrode and a bottom electrode. The structure further comprises a multilayer stack disposed between the top electrode and the bottom electrode, where the multilayer stack comprises alternating confinement layers and phase-change material layers, and where at least two of the phase-change material layers have different doping concentrations of at least one dopant.Type: ApplicationFiled: May 13, 2022Publication date: November 16, 2023Inventors: Kevin W. Brew, JIN PING HAN, Timothy Mathew Philip, Cheng-Wei Cheng, ROBERT L. BRUCE, Matthew Joseph BrightSky
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Patent number: 11812676Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.Type: GrantFiled: March 24, 2020Date of Patent: November 7, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy Mathew Philip, Lawrence A. Clevenger, Kevin W. Brew
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Patent number: 11800819Abstract: A non-volatile memory structure may include a phase change memory comprising a phase change material. The non-volatile memory structure may include a Schottky diode in series with the phase change memory, wherein a Schottky barrier of the Schottky diode is a surface of the phase change memory. This may be accomplished through a proper selection of materials for the contact of the phase change memory. This may create an integrated diode-memory structure which may control directionality of current without a penalty on the footprint of the structure.Type: GrantFiled: December 1, 2020Date of Patent: October 24, 2023Assignee: International Business Machines CorporationInventors: Timothy Mathew Philip, Kevin W. Brew, Lawrence A. Clevenger
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Publication number: 20230309425Abstract: A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode. A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode, where the inner electrode and the outer electrode are on the same horizontal plane. A method including forming an inner electrode and an outer electrode simultaneously on a substrate, forming a phase change material layer above both the inner electrode and the outer electrode.Type: ApplicationFiled: March 25, 2022Publication date: September 28, 2023Inventors: Timothy Mathew Philip, JIN PING HAN, Ching-Tzu Chen, Kevin W. Brew, Injo Ok
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Publication number: 20230284541Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.Type: ApplicationFiled: March 2, 2022Publication date: September 7, 2023Inventors: Timothy Mathew Philip, JIN PING HAN, Kevin W. Brew, Ching-Tzu Chen, Injo Ok
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Patent number: 11711989Abstract: An embodiment of the invention may include a semiconductor structure. The semiconductor structure may include a phase change element located above a heater. The heater may include a conductive element surrounding a dielectric element. The dielectric element may include an air gap.Type: GrantFiled: March 23, 2021Date of Patent: July 25, 2023Assignee: International Business Machines CorporationInventors: Injo Ok, Alexander Reznicek, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip
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Publication number: 20230210026Abstract: A phase change memory (PCM) cell includes a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, and a phase change section positioned between the first electrode and the second electrode. The phase change section includes a first phase change material having a first resistance drift coefficient, and a second phase change material having a second resistance drift coefficient that is greater than the first resistance drift coefficient. An axis of the PCM cell extends between the first electrode and the second electrode, and the second phase change material is offset from the first phase change material in a direction that is perpendicular to the axis.Type: ApplicationFiled: December 28, 2021Publication date: June 29, 2023Inventors: Timothy Mathew Philip, Kevin W. Brew, Caitlin Camille Stuckey, Rebecca Colby Martin, Robert Robison, Lawrence A. Clevenger
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Publication number: 20230200267Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Inventors: Kevin W. Brew, Injo Ok, Jin Ping Han, Timothy Mathew Philip, Matthew Joseph BrightSky, Nicole Saulnier
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Publication number: 20230189536Abstract: Techniques for controlling the programming current of a PCM-based AI device using an external resistor are provided. In one aspect, a PCM cell includes: a PCM stack, that has a bottom electrode; a heater disposed directly on the bottom electrode; a PCM unit including a first material disposed on the heater; a top electrode including a second material disposed on the PCM unit; and a resistor adjacent to the PCM stack, wherein the resistor includes a combination of the first material and the second material. A PCM device that includes at least one of the PCM cells, and a method of forming the PCM cell are also provided.Type: ApplicationFiled: December 15, 2021Publication date: June 15, 2023Inventors: Injo Ok, Soon-Cheon Seo, Youngseok Kim, Timothy Mathew Philip, Alexander Reznicek
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Publication number: 20230178549Abstract: Stacked field effect transistors are provided such having a first power rail; a second power rail; a first Field Effect Transistor (FET) having a first gate connected to the first power rail; a second FET having a second gate connected to the second power rail; and an insulator separating the first FET from the second FET, wherein the first power rail, the second power rail, the first FET, and the second FET are aligned on a shared axis, and wherein the first power rail and the second power rail are located on opposite sides of the device.Type: ApplicationFiled: December 8, 2021Publication date: June 8, 2023Inventors: Sung Dae SUK, Timothy Mathew PHILIP, Junli WANG, Dechao GUO, Chen ZHANG
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Patent number: 11665985Abstract: A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.Type: GrantFiled: November 23, 2020Date of Patent: May 30, 2023Assignee: International Business Machines CorporationInventors: Benedikt Kersting, Ghazi Sarwat Syed, Vara Sudananda Prasad Jonnalagadda, Manuel Le Gallo-Bourdeau, Abu Sebastian, Timothy Mathew Philip
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Publication number: 20230144842Abstract: A semiconductor component includes a dielectric layer including an opening. The semiconductor component further includes a liner arranged in the opening in direct contact with the dielectric layer. The semiconductor component further includes a wetting layer arranged in the opening in direct contact with the liner. The semiconductor component further includes an interconnect structure arranged in the opening in direct contact with the wetting layer. The semiconductor component further includes a cap arranged in the opening in direct contact with the interconnect structure and separated from the wetting layer by a spacer.Type: ApplicationFiled: November 10, 2021Publication date: May 11, 2023Inventors: Nicholas Anthony Lanzillo, Timothy Mathew Philip, Kevin W. Brew
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Patent number: 11621394Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.Type: GrantFiled: December 29, 2020Date of Patent: April 4, 2023Assignee: International Business Machines CorporationInventors: Kevin W. Brew, Injo Ok, Jin Ping Han, Timothy Mathew Philip, Matthew Joseph BrightSky, Nicole Saulnier