Patents by Inventor Matthew Donofrio

Matthew Donofrio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT EMITTING DIODES INCLUDING LIGHT EMITTING SURFACE BARRIER LAYERS, AND METHODS OF FABRICATING SAME
    Publication number: 20140175473
    Abstract: A light emitting device includes a Light Emitting Diode (LED) having a light emitting surface, a silicon nitride layer on the light emitting surface and a sealed environment surrounding the light emitting surface. The silicon nitride layer may be directly on and cover the light emitting surface. The silicon nitride layer may completely cover the light emitting surface. The silicon nitride layer may provide a substance blocking layer such as a moisture blocking layer and/or a carbon blocking layer that can prevent moisture and/or carbon, such as Volatile Organic Compounds (VOCs) that contain carbon, from reaching the light emitting surface.
    Type: Application
    Filed: February 4, 2013
    Publication date: June 26, 2014
    Applicant: Cree, Inc.
    Inventors: Matthew Donofrio, Barry Rayfield, Shaow B. Lin
  • HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
    Publication number: 20140167089
    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.
    Type: Application
    Filed: February 19, 2014
    Publication date: June 19, 2014
    Applicant: Cree, Inc.
    Inventors: John Adam Edmond, David B. Slater, JR., Jayesh Bharathan, Matthew Donofrio
  • LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY
    Publication number: 20140167065
    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.
    Type: Application
    Filed: February 20, 2014
    Publication date: June 19, 2014
    Applicant: CREE, INC.
    Inventors: Michael Bergmann, Matthew Donofrio, Sten Heikman, Kevin S. Schneider, Kevin W. Haberern, John A. Edmond
  • LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS
    Publication number: 20140151735
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Application
    Filed: January 20, 2014
    Publication date: June 5, 2014
    Applicant: CREE, INC.
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin James Yao
  • Light emitting devices having current reducing structures
    Patent number: 8704240
    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: April 22, 2014
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, Jr., Matthew Donofrio, John Edmond
  • Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
    Patent number: 8698184
    Abstract: A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: April 15, 2014
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, Christopher D. Williams, Kevin Shawne Schneider, Kevin Haberern, Matthew Donofrio
  • High efficiency Group III nitride LED with lenticular surface
    Patent number: 8692267
    Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: April 8, 2014
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, David Beardsley Slater, Jr., Jayesh Bharathan, Matthew Donofrio
  • LED structure with enhanced mirror reflectivity
    Patent number: 8686429
    Abstract: Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: April 1, 2014
    Assignee: Cree, Inc.
    Inventors: Michael Bergmann, Matthew Donofrio, Sten Heikman, Kevin S. Schneider, Kevin W. Haberern, John A. Edmond
  • HIGH VOLTAGE MONOLITHIC LED CHIP
    Publication number: 20140070245
    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
    Type: Application
    Filed: October 9, 2013
    Publication date: March 13, 2014
    Applicant: CREE, INC.
    Inventors: KEVIN W. HABERERN, MATTHEW DONOFRIO, BENNETT LANGSDORF, THOMAS PLACE, MICHAEL JOHN BERGMANN
  • Lateral semiconductor Light Emitting Diodes having large area contacts
    Patent number: 8643039
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: February 4, 2014
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin Jamie Yao
  • Semiconductor Light Emitting Diodes with Crack-Tolerant Barrier Structures and Methods of Fabricating the Same
    Publication number: 20130328096
    Abstract: A light emitting device includes an epitaxial region, an insulating layer on the epitaxial region, a bond pad on the insulating layer, and a crack reducing feature in the insulating layer. The crack reducing feature is configured to reduce the propagation of cracks in the insulating layer to an outside surface of the insulating layer. Related methods are also disclosed.
    Type: Application
    Filed: March 8, 2013
    Publication date: December 12, 2013
    Applicant: Cree, Inc.
    Inventors: Matthew Donofrio, Michael Bergmann, Kevln Haberern, Kevin Schneider
  • LIGHT EMITTING DIODE (LED) CONTACT STRUCTURES AND PROCESS FOR FABRICATING THE SAME
    Publication number: 20130299858
    Abstract: A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed.
    Type: Application
    Filed: May 8, 2012
    Publication date: November 14, 2013
    Inventors: Pritish Kar, David Beardsley Slater, JR., Matthew Donofrio, Brad Williams
  • LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    Publication number: 20130292639
    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
    Type: Application
    Filed: April 4, 2013
    Publication date: November 7, 2013
    Inventors: David Todd Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, JR., Matthew Donofrio, John Edmond
  • Light emitting diode with improved light extraction
    Patent number: 8575633
    Abstract: A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: November 5, 2013
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Hua-Shuang Kong, David Slater, Jr., John Edmond
  • White LEDs with emission wavelength correction
    Patent number: 8558252
    Abstract: Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: October 15, 2013
    Assignee: Cree, Inc.
    Inventors: James Ibbetson, Bernd Keller, Ronan Letoquin, Matthew Donofrio, Michael Bergmann
  • Conformal gel layers for light emitting diodes
    Patent number: 8525190
    Abstract: Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: September 3, 2013
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, John Adam Edmond, Hua-Shuang Kong
  • LED chip
    Patent number: D689031
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: September 3, 2013
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, James Ibbetson
  • Light emitting diode
    Patent number: D689830
    Type: Grant
    Filed: January 24, 2011
    Date of Patent: September 17, 2013
    Assignee: Cree, Inc.
    Inventors: Michael Bergmann, Kevin Haberern, Matthew Donofrio, Christopher D. Williams, Kevin Shawne Schneider
  • LED chip
    Patent number: D691569
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: October 15, 2013
    Assignee: Cree, Inc.
    Inventors: John A. Edmond, Michael J. Bergmann, Matthew Donofrio, Winston T. Parker
  • Lamp packages
    Patent number: D691973
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: October 22, 2013
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Peter Andrews