Abstract: A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the layer of sacrificial mandrel material to expose portions of the second hardmask and form a first and second sacrificial mandrel. Spacers are formed adjacent to the sacrificial mandrels. A filler material is deposited on the second hardmask, and a first mask is formed on the filler material. An exposed portion of the second sacrificial mandrel is removed to form a first cavity. The depth of the first cavity is increased. The first mask, portions of the first and second sacrificial mandrels, the filler material, portions of the second hardmask, the spacers, portions of the planarization layer and the first hardmask are removed. A second cavity is formed and the first and second cavities are filled with a conductive material.

Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.

Abstract: A method for forming conductive lines on a wafer comprises forming a first sacrificial mandrel and a second sacrificial mandrel. Spacers are formed adjacent to the first and second sacrificial mandrels. A filler material is deposited on the second hardmask. A first mask is formed on a portion of the second sacrificial mandrel. A first cavity and a second cavity are formed that expose portions of the second hardmask, and exposed portions of the second mask and exposed portions of the filler material are removed to expose portions of the first hardmask. Exposed portions of the first hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. Exposed portions of the insulator layer are removed to form a trench in the insulator layer and the trench is filled with a conductive material.

Abstract: A method for forming conductive lines on a wafer comprises forming a first sacrificial mandrel and a second sacrificial mandrel. Spacers are formed adjacent to the first and second sacrificial mandrels. A filler material is deposited on the second hardmask. A first mask is formed on a portion of the second sacrificial mandrel. A first cavity and a second cavity are formed that expose portions of the second hardmask, and exposed portions of the second mask and exposed portions of the filler material are removed to expose portions of the first hardmask. Exposed portions of the first hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. Exposed portions of the insulator layer are removed to form a trench in the insulator layer and the trench is filled with a conductive material.

Abstract: Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.

Abstract: An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a ? line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a ? line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an ? line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a ??? jog; a ??? jog; an ??? jog; a ??? jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.

Abstract: A method for manufacturing a semiconductor device includes forming a plurality of mandrels on a dielectric layer, conformally depositing a spacer layer on the plurality of mandrels, removing a portion of the spacer layer from a top surface of at least one of the plurality of mandrels, removing the at least one of the plurality of mandrels to create at least one opening, and filling the at least opening with a cut fill material, wherein the cut fill material comprises the same material as a material of the spacer layer.

Abstract: A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the layer of sacrificial mandrel material to expose portions of the second hardmask and form a first and second sacrificial mandrel. Spacers are formed adjacent to the sacrificial mandrels. A filler material is deposited on the second hardmask, and a first mask is formed on the filler material. An exposed portion of the second sacrificial mandrel is removed to form a first cavity. The depth of the first cavity is increased. The first mask, portions of the first and second sacrificial mandrels, the filler material, portions of the second hardmask, the spacers, portions of the planarization layer and the first hardmask are removed. A second cavity is formed and the first and second cavities are filled with a conductive material.

Abstract: Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.

Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.

Abstract: A semiconductor structure and the method of forming that semiconductor structure. The method includes formation of a plurality of fins from a layer of semiconductor material. At least one fin of the plurality of fins is at least fifty percent wider than each of a group of fins included in the plurality of fins. The method also includes selectively removing the one fin such that only the group of fins remain.

Abstract: A patterned photoresist is provided atop a substrate. A hardening agent is applied to the patterned photoresist to provide a polymeric coated patterned photoresist. The polymeric coated patterned photoresist is baked to provide a hardened photoresist, and subsequent the baking step, the polymeric coating is removed from the hardened photoresist by rinsing. The hardened photoresist can be removed anytime during the patterning of the substrate by an aqueous resist developer.

Abstract: Guiding pattern portions are formed on a surface of a lithographic material stack that is disposed on a surface of a semiconductor substrate. A copolymer layer is then formed between each neighboring pair of guiding pattern portions and thereafter a directed self-assembly process is performed that causes phase separation of the various polymeric domains of the copolymer layer. Each guiding pattern portion is selectively removed, followed by the removal of each first phase separated polymeric domain. Each second phase separated polymeric domain remains and is used as an etch mask in forming semiconductor fins in an upper semiconductor material portion of the semiconductor substrate.

Abstract: A patterned photoresist is provided atop a substrate. A hardening agent is applied to the patterned photoresist to provide a polymeric coated patterned photoresist. The polymeric coated patterned photoresist is baked to provide a hardened photoresist, and subsequent the baking step, the polymeric coating is removed from the hardened photoresist by rinsing. The hardened photoresist can be removed anytime during the patterning of the substrate by an aqueous resist developer.

Abstract: A semiconductor structure and the method of forming that semiconductor structure. The method includes formation of a plurality of fins from a layer of semiconductor material. At least one fin of the plurality of fins is at least fifty percent wider than each of a group of fins included in the plurality of fins. The method also includes selectively removing the one fin such that only the group of fins remain.

Abstract: Methods for forming semiconductor devices. Methods for forming fin structures include forming first sidewalls around a first set of mandrels. The first set of mandrels is removed and second sidewalls are formed around the first sidewalls and a second set of mandrels. The first sidewalls and the second set of mandrels are removed and an underlying layer around the second sidewalls is etched.

Abstract: Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.

Abstract: Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.

Abstract: Methods for modifying a spacer and/or spaces between spacers to enable a fin cut mask to be dropped between the spacers are provided. A first set of second mandrel structures having a first width is formed on facing sidewall surfaces of a neighboring pair of first mandrel structures and a second set of second mandrel structures having a second width less than the first width are formed on non-facing sidewall surfaces of the neighboring pair of first mandrel structures. Each first mandrel structure is removed and a spacer is formed on a sidewall surface of the first and second sets of second mandrel structures. In the region between the neighboring pair of first mandrel structure, a merged spacer is formed. The first and second sets of second mandrel structures are removed. A portion of an underlying substrate can be patterned utilizing each spacer and the merged spacer as etch masks.

Abstract: A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.