Abstract: An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

Abstract: An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

Abstract: The invention pertains to dielectric films for the production of microelectronic devices. A relatively stabile fluorinated silicate glass film is produced by depositing a fluorinated silicate glass film onto a substrate and then exposing the fluorinated silicate glass film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.

Abstract: A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring lines are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.

Abstract: An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.