Patents by Inventor Matthew Glenn Peters
Matthew Glenn Peters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210399525Abstract: A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.Type: ApplicationFiled: December 28, 2020Publication date: December 23, 2021Inventors: Guowei ZHAO, Matthew Glenn PETERS, Jun YANG, Eric R. HEGBLOM
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Patent number: 11196230Abstract: An emitter array may comprise a plurality of emitters and a metallization layer to electrically connect the plurality of emitters. The metallization layer may have a first end and a second end. The plurality of emitters may include a first emitter and a second emitter. The first emitter may be located closer to the first end than the second emitter. The first emitter and the second emitter have differently sized structures to compensate for a first impedance of the metallization layer between the first end and the first emitter and a second impedance between the first end and the second emitter.Type: GrantFiled: December 12, 2018Date of Patent: December 7, 2021Assignee: Lumentum Operations LLCInventors: Ajit Vijay Barve, Benjamin Kesler, Matthew Glenn Peters
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Patent number: 11189988Abstract: A device includes a substrate, a vertical cavity surface emitting laser (VCSEL) array on top of the substrate, a via through the substrate and the VCSEL array, a first electrode extended from a top of the VCSEL array to a bottom of the substrate, through the via, the first electrode electrically connected to the VCSEL array, a second electrode on the bottom of the substrate, the second electrode electrically connected to the VCSEL array, and an isolator in the via providing electrical isolation between the first electrode and the second electrode.Type: GrantFiled: September 30, 2019Date of Patent: November 30, 2021Assignee: Lumentum Operations LLCInventor: Matthew Glenn Peters
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Publication number: 20210367407Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.Type: ApplicationFiled: September 30, 2020Publication date: November 25, 2021Inventors: Jun YANG, Guowei ZHAO, Matthew Glenn PETERS, Eric R. HEGBLOM, Ajit Vijay BARVE, Benjamin KESLER
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Publication number: 20210344174Abstract: A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.Type: ApplicationFiled: July 29, 2020Publication date: November 4, 2021Inventors: Ajit Vijay BARVE, Matthew Glenn PETERS, Eric R. HEGBLOM
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Publication number: 20200388986Abstract: A device includes a substrate, a vertical cavity surface emitting laser (VCSEL) array on top of the substrate, a via through the substrate and the VCSEL array, a first electrode extended from a top of the VCSEL array to a bottom of the substrate, through the via, the first electrode electrically connected to the VCSEL array, a second electrode on the bottom of the substrate, the second electrode electrically connected to the VCSEL array, and an isolator in the via providing electrical isolation between the first electrode and the second electrode.Type: ApplicationFiled: September 30, 2019Publication date: December 10, 2020Inventor: Matthew Glenn PETERS
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Publication number: 20200106245Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.Type: ApplicationFiled: November 14, 2019Publication date: April 2, 2020Inventors: Ajit Vijay BARVE, Benjamin Kesler, Matthew Glenn Peters
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Patent number: 10490967Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.Type: GrantFiled: September 30, 2016Date of Patent: November 26, 2019Assignee: Lumentum Operations LLCInventors: Abdullah Demir, Matthew Glenn Peters
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Publication number: 20190237940Abstract: An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.Type: ApplicationFiled: January 7, 2019Publication date: August 1, 2019Inventors: Vincent V. WONG, Jay A. SKIDMORE, Matthew Glenn PETERS
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Publication number: 20190148918Abstract: A die may comprise a plurality of adjacent emitters and a potential dislocation line. The plurality of adjacent emitters and the potential dislocation line may be offset from each other within a range of angles based on a relative rotation of the plurality of adjacent emitters and the potential dislocation line.Type: ApplicationFiled: September 28, 2018Publication date: May 16, 2019Inventors: Matthew Glenn Peters, David Venables, Eric R. Hegblom, Ajit Vijay Barve
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Patent number: 9647416Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.Type: GrantFiled: December 23, 2013Date of Patent: May 9, 2017Assignee: Lumentum Operations LLCInventors: Abdullah Demir, Matthew Glenn Peters
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Publication number: 20170093125Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.Type: ApplicationFiled: September 30, 2016Publication date: March 30, 2017Inventors: Abdullah Demir, Matthew Glenn Peters
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Publication number: 20150333472Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.Type: ApplicationFiled: December 23, 2013Publication date: November 19, 2015Applicant: JDS Uniphase CorporationInventors: Abdullah Demir, Matthew Glenn Peters
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Patent number: 7602828Abstract: The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.Type: GrantFiled: November 12, 2007Date of Patent: October 13, 2009Assignee: JDS Uniphase CorporationInventors: Victor Rossin, Matthew Glenn Peters, Erik Paul Zucker
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Patent number: 7567603Abstract: The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section, a current blocking section and a partially current blocking section.Type: GrantFiled: September 17, 2007Date of Patent: July 28, 2009Assignee: JDS Uniphase CorporationInventors: Matthew Glenn Peters, Victor Rossin, Erik Paul Zucker
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Patent number: 7457341Abstract: A low optical loss and high efficiency grating is placed within a broad-area high-power laser diode or single spatial mode laser diode to narrow the spectral width and stabilize the emission wavelength. Several embodiments of grating configurations are presented, together with the measured results of a reduction to practice of a particular embodiment.Type: GrantFiled: February 23, 2006Date of Patent: November 25, 2008Assignee: JDS Uniphase CorporationInventors: Matthew Glenn Peters, Hanmin Zhao
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Publication number: 20080112451Abstract: The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.Type: ApplicationFiled: November 12, 2007Publication date: May 15, 2008Applicant: JDS Uniphase Corporation, State of Incorporation: DelawareInventors: Victor Rossin, Matthew Glenn Peters, Erik Paul Zucker
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Publication number: 20080069165Abstract: The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section, a current blocking section and a partially current blocking section.Type: ApplicationFiled: September 17, 2007Publication date: March 20, 2008Applicant: JDS Uniphase CorporationInventors: Matthew Glenn Peters, Victor Rossin, Erik Paul Zucker
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Patent number: 7223964Abstract: A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with.Type: GrantFiled: May 30, 2003Date of Patent: May 29, 2007Assignee: JDS Uniphase CorporationInventors: Lynn Karl Wiese, Matthew Glenn Peters, Jo S. Major, Jr.
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Publication number: 20030234353Abstract: A storage information system is disclosed for keeping archival information on the individual active optoelectronic components that are used in telecommunication equipment. The system involves enclosing a nonvolatile memory chip inside the hermetic package of the active optoelectronic component. A memory chip is used to keep the relevant information about the active optoelectronic component such as serial number, part number and specifications. Sensors can also be included inside the hermetic package to monitor the operating conditions of the optoelectronic component. The information system is capable of storing information that is relevant to the component reliability such as: hours of operation, maximum current or voltage, and maximum temperature. The information storage system has the advantage that the archived information is intimately associated with the optoelectronic component thereby lessening the likelihood that information is lost or tampered with.Type: ApplicationFiled: May 30, 2003Publication date: December 25, 2003Applicant: JDS UNIPHASE CORPORATIONInventors: Lynn Karl Wiese, Matthew Glenn Peters, Jo S. Major