Abstract: A microelectronic device that is radiation hardened through the incorporation of a quantum structure getter (QSG) is provided. The device, such as a field effect transistor (FET) includes a conductive channel and a material stack comprising: a capping layer, one or more barrier layers comprising a high band gap, one or more quantum structures comprising a small band gap, and a substrate. The quantum structures are positioned in close proximity to the conductive channel to form a quantum well charge getter. The getter forms a low energy area beneath the FET, which traps and confines electron-hole pair wave functions produced from ionizing radiation, causing the wave functions overlap, recombine, and produce light emission. The quantum structures getter the wave functions, which reduces the ionized photocurrent that reaches the conducting channel, thereby hardening the microelectronic device against ionizing radiation.

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

Abstract: The present disclosure relates to methods and apparatuses for sectioning and imaging tissue or other samples, which are then automatically captured to enable subsequent analysis. The apparatus acts as a slice capture mechanism for serial sectioning microscopy in a fashion which enables subsequent interfacing with secondary microscopic interrogations or for processing with molecular diagnostic tools. The slices are spatially indexed to allow specific slices to be recalled from a library via automated handling techniques described herein.

Abstract: The following concerns a method for co-localization of microscopy or histology stains by the assembly of a virtual image from one or more imaging operations. In particular, the method decreases the time required to obtain multiple labeled antigen or protein histology images of a biological sample. The method includes imaging the tissue as it is sliced by a microtome with a knife edge scanning microscope and spatially aligning the samples by the generated images. The spatial alignment of samples enabled by the method allows a panel of different antigen or protein secondary or functional stains to be compared across different sample slices, thereby allowing concurrent secondary stains of tissues and cells.

Abstract: The following concerns a method for co-localization of microscopy or histology stains by the assembly of a virtual image from one or more imaging operations. In particular, the method decreases the time required to obtain multiple labeled antigen or protein histology images of a biological sample. The method includes imaging the tissue as it is sliced by a microtome with a knife edge scanning microscope and spatially aligning the samples by the generated images. The spatial alignment of samples enabled by the method allows a panel of different antigen or protein secondary or functional stains to be compared across different sample slices, thereby allowing concurrent secondary stains of tissues and cells.

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

Abstract: A method for forming a silicon-containing epitaxial layer is disclosed. The method may include, heating a substrate to a temperature of less than approximately 950° C. and exposing the substrate to a first silicon source comprising a hydrogenated silicon source, a second silicon source, a dopant source, and a halogen source. The method may also include depositing a silicon-containing epitaxial layer wherein the dopant concentration within the silicon-containing epitaxial layer is greater than 3×1021 atoms per cubic centimeter.

Abstract: Carbon opals, a form of colloidal crystal, are composed of ordered two-dimensional or three-dimensional arrays of Monodispersed Starburst Carbon Spheres (MSCS). Methods for producing such carbon opals include oxidizing as-synthesized MSCS, for example by heating in air, to increase surface charge. Such oxidation is believed to decrease settling rates of a colloidal suspension, enabling formation of an ordered colloidal crystal. Inverse opals, composed of any of a wide variety of materials, and based on a carbon opal template, have a reciprocal structure to a carbon opal. Inverse opals are formed by methods including: forming a carbon opal as described, impregnating a desired material into pores in the carbon opal to produce a hybrid structure, and removing the carbon portion from the hybrid structure.

Abstract: Carbon opals, a form of colloidal crystal, are composed of ordered two-dimensional or three-dimensional arrays of Monodispersed Starburst Carbon Spheres (MSCS). Methods for producing such carbon opals include oxidizing as-synthesized MSCS, for example by heating in air, to increase surface charge. Such oxidation is believed to decrease settling rates of a colloidal suspension, enabling formation of an ordered colloidal crystal. Inverse opals, composed of any of a wide variety of materials, and based on a carbon opal template, have a reciprocal structure to a carbon opal. Inverse opals are formed by methods including: forming a carbon opal as described, impregnating a desired material into pores in the carbon opal to produce a hybrid structure, and removing the carbon portion from the hybrid structure.

Abstract: The following concerns a method for co-localization of microscopy or histology stains by the assembly of a virtual image from one or more imaging operations. In particular, the method decreases the time required to obtain multiple labeled antigen or protein histology images of a biological sample. The method includes imaging the tissue as it is sliced by a microtome with a knife edge scanning microscope and spatially aligning the samples by the generated images. The spatial alignment of samples enabled by the method allows a panel of different antigen or protein secondary or functional stains to be compared across different sample slices, thereby allowing concurrent secondary stains of tissues and cells.

Abstract: The present disclosure relates to methods and apparatuses for sectioning and imaging tissue or other samples, which are then automatically captured to enable subsequent analysis. The apparatus acts as a slice capture mechanism for serial sectioning microscopy in a fashion which enables subsequent interfacing with secondary microscopic interrogations or for processing with molecular diagnostic tools. The slices are spatially indexed to allow specific slices to be recalled from a library via automated handling techniques described herein.

Abstract: A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly.

Abstract: Motion strategies in two and three dimensions for scanning microscope imaging are described. An object, sample, or specimen is mounted on a precision three-dimensional stage. The object is moved concurrently with respect to a first axis and a second axis orthogonal to the first against a cutting tool to cut the object. An image of the cut portion is generated as the object is moved. The cutting tool may act as an optical waveguide for illuminating the portion of the object cut. An optical element captures images of the cut and illuminated object. The object may further be concurrently moved with respect to a third axis orthogonal to both the first and second.

Abstract: The present invention relates to a new combination comprising a therapeutically effective amount of an anti-IL1? antibody or an antigen-binding fragment thereof and at least one anti-diabetic agent.

Abstract: A photo sharing system includes a database including a user account, a mobile device for sending and receiving a digital image, wherein the digital image has a source identification associated with the user account, and a management server for receiving the digital image, analyzing the source identification associated with the digital image, and automatically storing the digital image on the database in response to the analysis of the source identification.

Abstract: A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.

Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.