Abstract: A method for stitchless bonding of fungal materials includes providing a waste-sourced mycelium substrate sourced from fermentation waste streams, selecting a plurality of waste-sourced mycelium substrate portions to be bonded, applying a pressure activated adhesive layer between the selected portions of the waste-sourced mycelium substrate, agglomerating the selected portions of the waste-sourced mycelium substrate and bonding the selected portions of the waste-sourced mycelium materials together to form a durable bond without delamination. Thus, the waste-sourced mycelium substrate is biodegradable which serves as a sustainable alternative to animal leather or synthetic leather in various applications.

Abstract: A mycelium growth bed for growing a solid substrate-bound mycelium through which the mycelium composite is easily and readily removed. This is achieved through the use of a perforation layer embedded between the mycelium substrate and the mycelium composite so as to create a uniform structural weakness and thereby enhancing harvesting abilities of the ex-substrate mycelium via a greatly reduced and uniform tear strength. The perforation layer, through which the mycelium grows, allows for the gated and controlled extrusion of a matrix of colonial cells that may be easily and uniformly delaminated from the underlying mycelium substrate.

Abstract: A mycelium growth bed for growing a solid substrate-bound mycelium through which the mycelium composite is easily and readily removed. This is achieved through the use of a perforation layer embedded between the mycelium substrate and the mycelium composite so as to create a uniform structural weakness and thereby enhancing harvesting abilities of the ex-substrate mycelium via a greatly reduced and uniform tear strength. The perforation layer, through which the mycelium grows, allows for the gated and controlled extrusion of a matrix of colonial cells that may be easily and uniformly delaminated from the underlying mycelium substrate.

Abstract: A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.

Abstract: A process of making a mycological biopolymer of a mycomaterial filter comprising the steps of filling a scaffold with a nutritive substrate and a fungus, placing an encasement on the scaffold to seal the scaffold, said encasement having only one outlet therein open to fresh air and defining a vacant space, incubation of the sealed scaffold at high temperatures and carbon dioxide concentrations to induce biopolymer growth into the vacant space wherein the mycological biopolymer environmental conditions comprise an environmental temperature from 55° F. to 95° F. and carbon dioxide constitutes from 2% to 8% of the environment within the vacant space, and thereafter drying the produced mycological biopolymer.

Abstract: A method for reducing and determining coefficient of friction of a mycelium for improving a plurality of mechanical properties of the mycelium. In the method, a first mycelium layer is contacted with an abrasive and pressure apparatus for smoothing and altering a microstructure of the mycelium. The smoothing of the mycelium microstructure reduces the coefficient of friction of the mycelium thereby enhancing the abrasion resistance of the mycelium. The coefficient of friction of the mycelium surface reduced through smoothing of the mycelium surface is determined utilizing a tilt angle mechanism.

Abstract: A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.

Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.

Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.

Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.

Abstract: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.

Abstract: A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10?13 ?-m2 to 10?7 ?-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10?2 K/W to 1010 K/W.

Abstract: Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method.

Abstract: Apparatus and method for generating electricity. The apparatus includes one or more first components configured to extract heat from at least a first fluid flow at a first temperature to one or more devices configured to convert thermal energy to electric energy. The first fluid flow is in a first direction. Additionally, the apparatus includes one or more second components configured to transfer heat from the one or more devices to at least a second fluid flow at a second temperature. The second temperature is lower than the first temperature, and the second fluid flow is in a second direction. Each first part of the first fluid flow corresponds to a first shortest distance to the one or more devices, and the first shortest distance is less than half the square root of the total free flow area for a corresponding first cross-section of the first fluid flow.

Abstract: A thermoelectric generator includes a tapered inlet manifold including first and second non-parallel sides; first and second pluralities of outlet manifolds; and thermoelectric generating units (TGUs) each including a hot-side heat exchanger (HHX) with inlet and outlet; a cold-side heat exchanger (CHX); and thermoelectric devices arranged between the HHX and CHX. The inlets of some of the HHXs receive exhaust gas from the first side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the first plurality of outlet manifolds. The inlets of other of the HHXs receive exhaust gas from the second side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the second plurality of outlet manifolds. The thermoelectric devices can generate electricity responsive to a temperature differential between the exhaust gas and the CHXs.

Abstract: Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple singulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these singulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more daisy chains of thermoelectric unicouples. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink.

Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.

Abstract: Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.

Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.

Abstract: Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple singulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these singulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more daisy chains of thermoelectric unicouples. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink.