Patents by Inventor Matthew L. Scullin

Matthew L. Scullin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200025672
    Abstract: A method for reducing and determining coefficient of friction of a mycelium for improving a plurality of mechanical properties of the mycelium. In the method, a first mycelium layer is contacted with an abrasive and pressure apparatus for smoothing and altering a microstructure of the mycelium. The smoothing of the mycelium microstructure reduces the coefficient of friction of the mycelium thereby enhancing the abrasion resistance of the mycelium. The coefficient of friction of the mycelium surface reduced through smoothing of the mycelium surface is determined utilizing a tilt angle mechanism.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 23, 2020
    Inventors: Matthew L. Scullin, Jordan Chase, Nicholas Wenner, Quinn Miller, Philip Ross
  • Publication number: 20190326097
    Abstract: A microwave plasma chemical vapor deposition device for diamond synthesis. A microwave source generates a microwave signal, and a resonant cavity receives a plurality of process gases. The microwave signal is spread in a first mode at a first waveguide. A mode conversion antenna converts the first mode of the microwave signal into a second mode that is spread at a second waveguide. A coupling conversion cavity receives and transmits the microwave signal in the second mode to the mode conversion antenna thereby converting the second mode of the microwave signal into a third mode. A medium viewport receives the microwave signal in the third mode and transmits to the resonant cavity which enables the microwave signal to excite and discharge the process gases to form spherical plasma, carbon containing groups and atomic hydrogen thereby depositing a diamond film on a seed.
    Type: Application
    Filed: April 22, 2019
    Publication date: October 24, 2019
    Inventors: Yi Ma, Matthew L. Scullin, Jinhua Zhu, Jianxin Wu, Yong Miao, Di Lu, Yonggan Ai, Christopher E. Griffin
  • Patent number: 9735022
    Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: August 15, 2017
    Assignee: ALPHABET ENERGY, INC.
    Inventors: Mingqiang Yi, Matthew L. Scullin, Gabriel Matus, Dawn L. Hilken, Chii Guang Lee, Sylvain Muckenhirn
  • Patent number: 9691849
    Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: June 27, 2017
    Assignee: Alphabet Energy, Inc.
    Inventors: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin
  • Patent number: 9608188
    Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: March 28, 2017
    Assignee: Alphabet Energy, Inc.
    Inventors: John Reifenberg, Lindsay Miller, Matthew L. Scullin, Adam Lorimer, Sravan Kumar R. Sura, Sasi Bhushan Beera, Douglas Crane
  • Patent number: 9514931
    Abstract: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: December 6, 2016
    Assignee: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Gabriel A. Matus, Matthew L. Scullin, Chii Guang Lee, Sylvain Muckenhirn
  • Publication number: 20160322554
    Abstract: A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10?13 ?-m2 to 10?7 ?-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10?2 K/W to 1010 K/W.
    Type: Application
    Filed: April 1, 2016
    Publication date: November 3, 2016
    Inventors: Matthew L. Scullin, Madhav A. Karri, Adam Lorimer, Sylvain Muckenhirn, Gabriel A. Matus, Justin Tynes Kardel, Barbara Wacker
  • Publication number: 20160190420
    Abstract: Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method.
    Type: Application
    Filed: December 16, 2015
    Publication date: June 30, 2016
    Inventors: Lindsay Miller, John P. Reifenberg, Douglas Crane, Adam Lorimer, Mario Aguirre, Jordan Chase, Matthew L. Scullin
  • Patent number: 9318682
    Abstract: Apparatus and method for generating electricity. The apparatus includes one or more first components configured to extract heat from at least a first fluid flow at a first temperature to one or more devices configured to convert thermal energy to electric energy. The first fluid flow is in a first direction. Additionally, the apparatus includes one or more second components configured to transfer heat from the one or more devices to at least a second fluid flow at a second temperature. The second temperature is lower than the first temperature, and the second fluid flow is in a second direction. Each first part of the first fluid flow corresponds to a first shortest distance to the one or more devices, and the first shortest distance is less than half the square root of the total free flow area for a corresponding first cross-section of the first fluid flow.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: April 19, 2016
    Assignee: Alphabet Energy, Inc
    Inventors: Adam Lorimer, Matthew L. Scullin, Sravan Kumar R. Sura, Christopher Hannemann
  • Publication number: 20160099398
    Abstract: A thermoelectric generator includes a tapered inlet manifold including first and second non-parallel sides; first and second pluralities of outlet manifolds; and thermoelectric generating units (TGUs) each including a hot-side heat exchanger (HHX) with inlet and outlet; a cold-side heat exchanger (CHX); and thermoelectric devices arranged between the HHX and CHX. The inlets of some of the HHXs receive exhaust gas from the first side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the first plurality of outlet manifolds. The inlets of other of the HHXs receive exhaust gas from the second side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the second plurality of outlet manifolds. The thermoelectric devices can generate electricity responsive to a temperature differential between the exhaust gas and the CHXs.
    Type: Application
    Filed: October 1, 2015
    Publication date: April 7, 2016
    Inventors: Adam Lorimer, Ad de Pijper, Christopher Hannemann, Douglas Crane, Sasi Bhushan Beera, Sravan Kumar R. Sura, Jordan Chase, Mothusi Pahl, Tapan Patel, Matthew L. Scullin, Michael Stephen Lindheim, Daniel Freeman, Mark Frederic Melikian, Luna P. Schector
  • Patent number: 9257627
    Abstract: Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple singulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these singulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more daisy chains of thermoelectric unicouples. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: February 9, 2016
    Assignee: Alphabet Energy, Inc.
    Inventors: Mario Aguirre, Matthew L. Scullin
  • Publication number: 20160035829
    Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
    Type: Application
    Filed: April 9, 2015
    Publication date: February 4, 2016
    Inventors: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin
  • Patent number: 9242855
    Abstract: Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: January 26, 2016
    Assignee: Alphabet Energy, Inc.
    Inventors: Gabriel A. Matus, Matthew L. Scullin
  • Patent number: 9240328
    Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: January 19, 2016
    Assignee: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Matthew L. Scullin, Gabriel Alejandro Matus, Dawn L. Hilken, Chii Guang Lee, Sylvain Muckenhirn
  • Patent number: 9203011
    Abstract: Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple singulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these singulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more daisy chains of thermoelectric unicouples. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: December 1, 2015
    Assignee: Alphabet Energy, Inc.
    Inventors: Mario Aguirre, Matthew L. Scullin
  • Publication number: 20150287902
    Abstract: Apparatus and method for generating electricity. The apparatus includes one or more first components configured to extract heat from at least a first fluid flow at a first temperature to one or more devices configured to convert thermal energy to electric energy. The first fluid flow is in a first direction. Additionally, the apparatus includes one or more second components configured to transfer heat from the one or more devices to at least a second fluid flow at a second temperature. The second temperature is lower than the first temperature, and the second fluid flow is in a second direction. Each first part of the first fluid flow corresponds to a first shortest distance to the one or more devices, and the first shortest distance is less than half the square root of the total free flow area for a corresponding first cross-section of the first fluid flow.
    Type: Application
    Filed: April 14, 2015
    Publication date: October 8, 2015
    Inventors: Adam Lorimer, Matthew L. Scullin, Sravan Kumar R. Sura, Christopher Hannemann
  • Publication number: 20150243868
    Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.
    Type: Application
    Filed: May 8, 2015
    Publication date: August 27, 2015
    Inventors: John Reifenberg, Lindsay Miller, Matthew L. Scullin, Adam Lorimer, Sravan Kumar R. Sura, Sasi Bhushan Beera, Douglas Crane
  • Patent number: 9065017
    Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: June 23, 2015
    Assignee: Alphabet Energy, Inc.
    Inventors: John Reifenberg, Lindsay Miller, Matthew L. Scullin, Adam Lorimer, Sravan Kumar R. Sura, Sasi Bhushan Beera, Douglas Crane
  • Patent number: 9051175
    Abstract: Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: June 9, 2015
    Assignee: Alphabet Energy, Inc.
    Inventors: Gabriel A. Matus, Matthew L. Scullin
  • Publication number: 20150147842
    Abstract: A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.
    Type: Application
    Filed: December 11, 2014
    Publication date: May 28, 2015
    Inventors: Gabriel A. MATUS, Mingqiang YI, Matthew L. SCULLIN, Justin Tynes KARDEL