Patents by Inventor Matthew L. Scullin

Matthew L. Scullin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150093904
    Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.
    Type: Application
    Filed: December 11, 2014
    Publication date: April 2, 2015
    Inventors: Mingqiang YI, Matthew L. SCULLIN, Gabriel MATUS, Dawn L. HILKEN, Chii Guang LEE, Sylvain MUCKENHIRN
  • Publication number: 20150064830
    Abstract: A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 5, 2015
    Inventors: John REIFENBERG, Lindsay MILLER, Matthew L. SCULLIN, Adam LORIMER, Sravan Kumar R. SURA, Sasi Bhushan BEERA, Douglas CRANE
  • Publication number: 20140360546
    Abstract: Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon.
    Type: Application
    Filed: June 5, 2014
    Publication date: December 11, 2014
    Inventors: John REIFENBERG, Lindsay MILLER, Matthew L. SCULLIN
  • Publication number: 20140329389
    Abstract: Structure including nano-ribbons and method thereof. The structure include multiple nano-ribbons. Each of the multiple nano-ribbons corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the multiple nano-ribbons corresponds to a cross-sectional area associated with a ribbon thickness, and the ribbon thickness ranges from 5 nm to 500 nm. Each of the multiple nano-ribbons is separated from at least another nano-ribbon selected from the multiple nano-ribbons by a second distance ranging from 5 nm to 500 nm.
    Type: Application
    Filed: July 16, 2014
    Publication date: November 6, 2014
    Inventors: Gabriel A. MATUS, Matthew L. SCULLIN
  • Publication number: 20140193982
    Abstract: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.
    Type: Application
    Filed: March 10, 2014
    Publication date: July 10, 2014
    Applicant: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Gabriel A. Matus, Matthew L. Scullin, Chii Guang Lee, Sylvain Muckenhirn
  • Publication number: 20140182644
    Abstract: Thermoelectric device with a multi-leg package and method thereof. The thermoelectric device includes a first ceramic base structure including a first surface and a second surface, and a first plurality of pads including one or more first materials thermally and electrically conductive. The first plurality of pads are attached to the first surface. Additionally, the thermoelectric device includes a second plurality of pads including the one or more first materials. The second plurality of pads are attached to the second surface and arranged in a mirror image with the first plurality of pads. Moreover, the thermoelectric device includes a plurality of thermoelectric legs attached to the first plurality of pads respectively. Each pad of the first plurality of pads is attached to at least two first thermoelectric legs of the plurality of thermoelectric legs.
    Type: Application
    Filed: October 14, 2013
    Publication date: July 3, 2014
    Applicant: Alphabet Energy, Inc.
    Inventors: Mario Aguirre, Adam Lorimer, Sasi Bhushan Beera, Sravan Kumar Sura, Matthew L. Scullin, Sylvain Muckenhirn, Douglas Crane
  • Patent number: 8736011
    Abstract: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: May 27, 2014
    Assignee: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Gabriel A. Matus, Matthew L. Scullin, Chii Guang Lee, Sylvain Muckenhirn
  • Publication number: 20140116491
    Abstract: Thermoelectric solid material and method thereof. The thermoelectric solid material includes a plurality of nanowires. Each nanowire of the plurality of nanowires corresponds to an aspect ratio (e.g., a ratio of a length of a nanowire to a diameter of the nanowire) equal to or larger than 10, and each nanowire of the plurality of nanowires is chemically bonded to one or more other nanowires at at least two locations of the each nanowire.
    Type: Application
    Filed: October 24, 2013
    Publication date: May 1, 2014
    Applicant: Alphabet Energy, Inc.
    Inventors: John Reifenberg, Saniya LeBlanc, Matthew L. Scullin
  • Publication number: 20140024163
    Abstract: Method for assembling thermoelectric unicouples is provided and applied with silicon-based nanostructure thermoelectric legs. The method includes preparing and disposing both n-type and p-type thermoelectric material blocks in alternative columns on a first shunt material. The method includes a sequence of cutting processes to resize the thermoelectric material blocks to form multiple cingulated unicouples each having an n-type thermoelectric leg and a p-type thermoelectric leg bonded to a section of the first shunt material. Additionally, the method includes re-disposing these cingulated unicouples in a serial daisy chain configuration with a predetermined pitch distance and bonding a second shunt material on top. The method further includes performing additional cutting processes to form one or more parallel series of thermoelectric unicouples in daisy chain configuration. The first shunt material is coupled to a cold-side heat sink and the second shunt material is coupled to a hot-side heat sink.
    Type: Application
    Filed: July 22, 2013
    Publication date: January 23, 2014
    Applicant: Alphabet Energy, Inc.
    Inventors: Mario Aguirre, Matthew L. Scullin
  • Publication number: 20130175654
    Abstract: Array of nanoholes and method for making the same. The array of nanoholes includes a plurality of nanoholes. Each of the plurality of nanoholes corresponds to a first end and a second end, and the first end and the second end are separated by a first distance of at least 100 ?m. Each of the plurality of nanoholes corresponds to a cross-sectional area associated with a distance across, and the distance across ranges from 5 nm to 500 nm. Each of the plurality of nanoholes is separated from at least another nanohole selected from the plurality of nanoholes by a semiconductor material associated with a sidewall thickness, and the sidewall thickness ranges from 5 nm to 500 nm.
    Type: Application
    Filed: February 6, 2013
    Publication date: July 11, 2013
    Inventors: Sylvain Muckenhirn, Chii Guang Lee, Matthew L. Scullin
  • Publication number: 20120319082
    Abstract: A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.
    Type: Application
    Filed: December 1, 2011
    Publication date: December 20, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Gabriel A. Matus, Matthew L. Scullin, Chii Guang Lee, Sylvain Muckenhirn
  • Publication number: 20120295074
    Abstract: An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 ?m. All nanowires of the plurality of nanowires are substantially parallel to each other.
    Type: Application
    Filed: November 17, 2011
    Publication date: November 22, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Mingqiang Yi, Matthew L. Scullin, Gabriel Alejandro Matus, Dawn L. Hilken, Chii Guang Lee, Sylvain Muckenhirn
  • Publication number: 20120247527
    Abstract: A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from 10?13 ?-m2 to 10?7 ?-m2. A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10?2 K/W to 1010 K/W.
    Type: Application
    Filed: February 1, 2012
    Publication date: October 4, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Matthew L. Scullin, Madhav A. Karri, Adam Lorimer, Sylvain Muckenhirn, Gabriel A. Matus, Justin Tynes Kardel, Barbara Wacker
  • Patent number: 8222510
    Abstract: The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.
    Type: Grant
    Filed: August 11, 2009
    Date of Patent: July 17, 2012
    Assignee: The Regents of the University of California
    Inventors: Arunava Majumdar, Ramamoorthy Ramesh, Choongho Yu, Matthew L. Scullin, Mark Huijben
  • Publication number: 20120152295
    Abstract: A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 21, 2012
    Applicant: Alphabet Energy, Inc.
    Inventors: Gabriel A. Matus, Mingqiang Yi, Matthew L. Scullin, Justin Tynes Kardel
  • Publication number: 20110114146
    Abstract: A uniwafer device for thermoelectric applications includes one or more first thermoelectric elements and one or more second thermoelectric elements comprising respectively a first and second patterned portion of a substrate material. Each first/second thermoelectric element is configured to be functionalized as an n-/p-type semiconductor with a thermoelectric figure of merit ZT greater than 0.2. The second patterned portion is separated from the first patterned portion by an intermediate region functionalized partially for thermal isolation and/or partially for electric interconnecting. The one or more first thermoelectric elements and the one or more second thermoelectric elements are spatially configured to allow formation of a first contact region and a second contact region respectively connecting to each of the one or more first thermoelectric elements and/or each of the one or more second thermoelectric elements to form a continuous electric circuit.
    Type: Application
    Filed: November 10, 2010
    Publication date: May 19, 2011
    Applicant: Alphabet Energy, Inc.
    Inventor: Matthew L. Scullin
  • Publication number: 20100051079
    Abstract: The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.
    Type: Application
    Filed: August 11, 2009
    Publication date: March 4, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arunava Majumdar, Ramamoorthy Ramesh, Choongho Yu, Matthew L. Scullin, Mark Huijben