Patents by Inventor Matthias Georg Gottwald

Matthias Georg Gottwald has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYNTHETIC ANTIFERROMAGNET (SAF) COUPLED FREE LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION (P-MTJ)
    Publication number: 20160005955
    Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.
    Type: Application
    Filed: July 1, 2014
    Publication date: January 7, 2016
    Inventors: Chando PARK, Matthias Georg GOTTWALD, Kangho LEE, Seung Hyuk KANG
  • SMOOTH SEED LAYERS WITH UNIFORM CRYSTALLINE TEXTURE FOR HIGH PERPENDICULAR MAGNETIC ANISOTROPY MATERIALS
    Publication number: 20150311427
    Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.
    Type: Application
    Filed: July 17, 2014
    Publication date: October 29, 2015
    Inventors: Matthias Georg GOTTWALD, Jimmy KAN, Kangho LEE, Chando PARK, Seung Hyuk KANG
  • REFERENCE LAYER FOR PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC TUNNEL JUNCTION
    Publication number: 20150263266
    Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.
    Type: Application
    Filed: August 15, 2014
    Publication date: September 17, 2015
    Inventors: Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Kangho Lee, Seung Hyuk Kang