Abstract: In an embodiment a method includes providing a substrate arrangement having a back end of line (BEOL) stack on a semiconductor substrate, wherein the BEOL stack comprises a plurality of structured wiring layers stacked and embedded in an insulating material structure (IMS), and wherein an upmost structured wiring layer of the plurality of structured wiring layers comprises a plurality of contact pads, after providing the substrate arrangement, locally removing portions of the IMS for exposing a first set of contact pads of the plurality of contact pads of the upmost structured wiring layer, and after locally removing portions of the IMS, depositing a conductive layer comprising a metallic material on a surface of the BEOL stack and structuring the conductive layer to provide a first structured portion of the conductive layer comprising a contact pad array and a second portion of the conductive layer that is arranged on the first set of contact pads of the BEOL stack.

Abstract: A substrate arrangement for a micro display including a semiconductor substrate, a back end of line (BEOL) stack on the semiconductor substrate and wherein the BEOL stack comprises structured wiring layers, an insulating material structure (IMS), and a recess in the IMS, wherein the structured wiring layers are stacked and embedded in the insulating material structure, and wherein an upmost structured wiring layer of the structured wiring layers includes contact pads, and wherein the recess extends to a first set of contact pads; and a conductive layer on the surface of the BEOL stack, wherein the conductive layer includes a first portion including a contact pad array and wherein the conductive layer includes a second portion that is arranged on the first set of contact pads of the BEOL stack, and wherein the first portion of the conductive layer is electrically separated from the second portion of the conductive layer.

Abstract: A method includes providing a semiconductor substrate comprising a main surface, forming a dielectric region on the main surface, forming a recess in the dielectric region, forming a strip of phase change material within the recess, forming a heating element that is thermally coupled to the strip of phase change material, forming an interconnection region over the main surface before or after forming the recess, the interconnection region including a metallization layer and a dielectric layer, electrically connecting the strip of phase change material to a connecting one of the metallization layers from the interconnection region, and completing formation of the interconnection region after electrically connecting the strip of phase change material, wherein completing formation of the interconnection region includes forming an outer one of the dielectric layers from the interconnection region that is disposed over the connecting one of the metallization layers and comprises a planar upper surface.

Abstract: A device is provided. The device includes a first portion having a phase change switch device on a first substrate and a second portion having a semiconductor circuit on a second substrate. The first and second portions are bonded together. A method of manufacturing the device is also described.

Abstract: A semiconductor device includes a semiconductor substrate, a phase change switching device formed over the semiconductor substrate and including a strip of phase change material connected between an RF input contact and an RF output contact, and a heating element thermally coupled to the strip of phase change material, and a silicon adhesion layer that forms a direct interface with a first surface of the strip of phase change material and separates the first surface from a dielectric material formed thereon.

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Abstract: A method includes providing a semiconductor substrate comprising a main surface, forming a dielectric region on the main surface, forming a recess in the dielectric region, forming a strip of phase change material within the recess, forming a heating element that is thermally coupled to the strip of phase change material, forming an interconnection region over the main surface before or after forming the recess, the interconnection region including a metallization layer and a dielectric layer, electrically connecting the strip of phase change material to a connecting one of the metallization layers from the interconnection region, and completing formation of the interconnection region after electrically connecting the strip of phase change material, wherein completing formation of the interconnection region includes forming an outer one of the dielectric layers from the interconnection region that is disposed over the connecting one of the metallization layers and comprises a planar upper surface.

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

Abstract: A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material.

Abstract: An electronic assembly contains a circuit board having a current-conducting current path with two mutually spaced-apart current path ends that form an interruption point and a contact clip bridging the interruption point. The contact clip is manufactured without a preload, as a thermal fuse. The contact clip has a multiple bent, open clip loop and a contact limb making contact with both mutually spaced-apart current path ends using solder. The contact clip further has a fixing limb with a limb end seated in a circuit board opening. The limb end of the fixing limb is oversized relative to a circuit board opening, and a deformation being imparted to the contact clip, with an internal preload being generated.

Abstract: A method of manufacturing a semiconductor device is described. The method includes forming a hard mask over a semiconductor substrate. The hard mask is patterned to generate openings in the hard mask. Deep trenches are formed in the semiconductor substrate by etching through the openings in the hard mask. The openings in the hard mask are widened. A pre-filler side wall layer is formed over the widened openings of the hard mask and the side walls of the deep trenches. The pre-filler side wall layer is recessed down to at least a first depth in the semiconductor substrate. The deep trenches are filled with a filler material. A corresponding semiconductor device is also described.

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

Abstract: An electronic assembly contains a circuit board having a current-conducting current path with two mutually spaced-apart current path ends that form an interruption point and a contact clip bridging the interruption point. The contact clip is manufactured without a preload, as a thermal fuse. The contact clip has a multiple bent, open clip loop and a contact limb making contact with both mutually spaced-apart current path ends using solder. The contact clip further has a fixing limb with a limb end seated in a circuit board opening. The limb end of the fixing limb is oversized relative to a circuit board opening, and a deformation being imparted to the contact clip, with an internal preload being generated.

Abstract: An electronic assembly contains a circuit board having a current-conducting current path with two mutually spaced-apart current path ends that form an interruption point and a contact clip bridging the interruption point. The contact clip is manufactured without a preload, as a thermal fuse. The contact clip has a multiple bent, open clip loop and a contact limb making contact with both mutually spaced-apart current path ends using solder. The contact clip further has a fixing limb with a limb end seated in a circuit board opening. The limb end of the fixing limb is oversized relative to a circuit board opening, and a deformation being imparted to the contact clip, with an internal preload being generated.

Abstract: An electronics housing is specified for electronics in a motor vehicle. The electronics housing has a first housing shell with a first base plate and a first side wall as well as a second housing shell with a second base plate and a second side wall. The first side wall is embodied here with double walls either completely or at least in one section, with the result that a groove-shaped wall intermediate space is formed between an outer partial wall and an inner partial wall of the first side wall. In an assembled state of the housing, the second side wall dips into this wall intermediate space.