Patents by Inventor Matthias Markert

Matthias Markert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
    Publication number: 20100027311
    Abstract: An integrated circuit and a method of forming an integrated circuit. One embodiment includes a conductive line formed above a surface of a carrier. A slope of the sidewalls of the conductive line in a direction perpendicular to the surface of the carrier reveals a discontinuity and a width of the conductive line in an upper portion thereof is larger than the corresponding width in the lower portion.
    Type: Application
    Filed: July 30, 2008
    Publication date: February 4, 2010
    Applicant: QIMONDA AG
    Inventors: Christoph Kleint, Nicolas Nagel, Dominik Olligs, Matthias Markert
  • Hard Mask Layer Stack And A Method Of Patterning
    Publication number: 20070243707
    Abstract: A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2 and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.
    Type: Application
    Filed: March 15, 2007
    Publication date: October 18, 2007
    Applicant: QIMONDA AG
    Inventors: Dirk Manger, Hocine Boubekeur, Martin Verhoeven, Nicolas Nagel, Thomas Tatry, Dirk Caspary, Matthias Markert, Lothar Bauch, Stefan Blawid, Manuela Gutsch, Ludovic Lattard, Martin Roessiger, Mirko Vogt
  • Hard mask layer stack and a method of patterning
    Publication number: 20070215986
    Abstract: A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2 and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 20, 2007
    Inventors: Dirk Manger, Hocine Boubekeur, Martin Verhoeven, Nicolas Nagel, Thomas Tatry, Dirk Caspary, Matthias Markert