Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.

Abstract: A detection assembly and a method for producing a detection assemblies are disclosed. In an embodiment a detection arrangement includes an emitter configured to generate radiation having a peak wavelength in an infrared spectral range, a detector configured to receive the radiation, a mounting surface comprising at least a first contact surface and a second contact surface for external electrical connection of the detection arrangement, a form body adjoining the emitter and the detector at least in places and deflection optics, on which the radiation impinges during operation of the detection arrangement so that an optical path is formed between the emitter and the detector by the deflection optics, wherein the deflection optics include a scattering body into which the radiation enters during the operation through a surface of the scattering body facing the emitter.

Abstract: An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

Abstract: A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

Abstract: A laser device comprises a carrier, an optoelectronic component provided on the carrier, said component being designed to emit laser radiation, and an optical element designed to form the laser radiation emitted by the optoelectronic component, wherein: the optical element has a first layer that is at least partially transparent to the laser radiation, with a first refractive index, and a second layer that is at least partially transparent to the laser radiation, with a second refractive index; the first layer being applied to the optoelectronic component and having a surface with an imprinted structure; and the second layer is applied to the first layer, on the surface (24) having the imprinted structure.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: A device includes a carrier and a plurality of semiconductor chips configured to generate radiation. The carrier includes a lead frame. The lead frame includes two connecting parts for external electrical contacting of the device. The semiconductor chips are arranged on the carrier. The carrier is surrounded by a casing at least in places along its entire circumference. The casing forms a side face of the device at least in places. The side face includes traces of material removal.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: A sensor includes a printed circuit board; at least one semiconductor chip arranged on the printed circuit board and includes a front-side contact, wherein the semiconductor chip is a radiation-detecting semiconductor chip; an embedding layer arranged on the printed circuit board and laterally adjoining the at least one semiconductor chip; and a contact layer connected to the front-side contact of the at least one semiconductor chip.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

Abstract: A method of producing an optoelectronic component includes providing a carrier; securing a sheet including a wavelength-converting material on a top side of the carrier; arranging a grid structure on a top side of the sheet; arranging an optoelectronic semiconductor chip in an opening of the grid structure on the top side of the sheet; arranging a potting material on the top side of the sheet, wherein the grid structure and the optoelectronic semiconductor chip are at least partly embedded into the potting material, and a composite body including the potting material, the sheet, the grid structure and the optoelectronic semiconductor chip is formed; and detaching the composite body from the carrier.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: A photonic gas sensor and a method for producing a photonic gas sensor are disclosed. In an embodiment a photonic gas sensor includes a component housing with at least one cavity, a radiation-emitting semiconductor chip arranged in the cavity and configured to transmit electromagnetic radiation in a first wavelength range, a radiation-detecting semiconductor chip arranged in the cavity and configured to detect electromagnetic radiation in a second wavelength range and an active sensor element having a fluorescent dye configured to emit electromagnetic radiation in the second wavelength range upon being excited by electromagnetic radiation in the first wavelength range, wherein an intensity of the emitted electromagnetic radiation in the second wavelength range changes reversibly in presence of a gas to be detected.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.

Abstract: An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

Abstract: A method of producing sensors includes providing a carrier plate; arranging semiconductor chips on the carrier plate, wherein the semiconductor chips include at least radiation-detecting semiconductor chips; providing radiation-transmissive optical elements on the carrier plate provided with the semiconductor chips, wherein a plurality of radiation-transmissive optical elements are provided jointly on the carrier plate provided with the semiconductor chips; and singulating the carrier plate provided with the semiconductor chips and the radiation-transmissive optical elements, thereby forming separate sensors including a section of the carrier plate, at least one radiation-detecting semiconductor chip and at least one radiation-transmissive optical element.

Abstract: An electronic component, an optoelectronic component, and a component arrangement are disclosed. In an embodiment the electronic component includes an electronic semiconductor chip and a molded body, wherein the molded body covers at least one side face of the electronic semiconductor chip, wherein a surface of the electronic semiconductor chip is at least partly not covered by the molded body, wherein the molded body includes a first side face with a peg, and wherein the molded body includes a second side face with a groove matching the peg.