Abstract: An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein an electrically conductive through contact extends from a top side of the composite body to an underside of the composite body through the molded body, a top side of the optoelectronic semiconductor chip is at least partly not covered by the molded body, the chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, the optoelectronic component includes an upper insulation layer extending over the first top side metallization, and the optoelectronic component includes a second top side metallization arranged above the upper insulation layer and electrically insulated with respect to the first top side metallization by the upper insulation layer.

Abstract: A method of applying a first material to a surface in a plurality of mutually separate coating regions includes: A) providing the surface containing the coating regions; B) producing a first masking layer on the surface by a photolithographic process, wherein the first masking layer includes a plurality of first openings arranged above the coating regions; C) providing a self-supporting second masking layer and then applying the second masking layer to the first masking layer, wherein the second masking layer includes a plurality of second openings arranged above the first openings and having a size less than or equal to a size of the first openings; and D) applying the first material to the surface in the coating regions through the first and second openings in the first and second masking layers.

Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

Abstract: An optoelectronic device includes a printed circuit board, and a light source arranged on a surface of the printed circuit board, said light source comprising at least one luminous face formed by at least one light-emitting diode wherein the light-emitting diode is electrically connected to the printed circuit board, wherein the light-emitting diode is at least partly enclosed by molding by a potting compound.

Abstract: An electronic component, an optoelectronic component, a component arrangement, and a method for producing an electronic component are disclosed. In an embodiment, the method includes forming a sacrificial structure on a top side of a carrier by a photolithographic process from a photoresist layer, arranging an electronic semiconductor chip on the carrier after exposing the photoresist layer, molding a molded body around the sacrificial structure and around the electronic semiconductor chip such that a surface of the electronic semiconductor chip is at least partly not covered by the molded body, detaching the molded body from the carrier and removing the sacrificial structure, wherein removing the sacrificial structure results in a cutout being formed in the molded body.

Abstract: A semiconductor device includes a semiconductor chip including an active region provided to generate radiation; a radiation exit face extending parallel to a main plane of extension of the active region; a molding molded in places onto the semiconductor chip and that, at least in places, forms at least one side face of the semiconductor device; a mounting surface provided to mount the semiconductor device; and a spacer projecting beyond the radiation exit face in a vertical direction extending perpendicular to the radiation exit face.

Abstract: An optoelectronic component (100) comprises an optoelectronic semiconductor chip (10), a first contact area (31) and a second contact area (32), which is laterally offset with respect to the first contact area and is electrically insulated therefrom, and a housing element (40). The first contact area (31) is electrically conductively connected to the first semiconductor layer (21) and the second contact area (32) is electrically conductively connected to the second semiconductor layer (22) of the optoelectronic semiconductor chip. The first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element (40) is fixed to the first contact area (31) and the second contact area (32) in regions in which the first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element surrounds the optoelectronic semiconductor chip at least partly.

Abstract: A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; at least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.

Abstract: A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; a least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.