Patents by Inventor Mattias E. Dahlstrom

Mattias E. Dahlstrom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11004770
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: May 11, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Patent number: 10177071
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: January 8, 2019
    Inventor: Mattias E. Dahlstrom
  • Patent number: 10157816
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: December 18, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Publication number: 20180358284
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: August 21, 2018
    Publication date: December 13, 2018
    Inventor: Mattias E. DAHLSTROM
  • Patent number: 10032691
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: July 24, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Publication number: 20180182687
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: February 20, 2018
    Publication date: June 28, 2018
    Inventor: Mattias E. DAHLSTROM
  • Patent number: 9984954
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: May 29, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9911682
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: March 6, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9704778
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: July 11, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Publication number: 20170162471
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: February 22, 2017
    Publication date: June 8, 2017
    Inventor: Mattias E. DAHLSTROM
  • Patent number: 9564508
    Abstract: A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: February 7, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Mattias E. Dahlstrom, Dinh Dang, Qizhi Liu, Ramana M. Malladi
  • Publication number: 20160329265
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: July 20, 2016
    Publication date: November 10, 2016
    Inventor: Mattias E. DAHLSTROM
  • Publication number: 20160133543
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: January 15, 2016
    Publication date: May 12, 2016
    Inventor: Mattias E. DAHLSTROM
  • Patent number: 9312147
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: April 12, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9287141
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: March 15, 2016
    Assignee: International Business Machines Corporation
    Inventor: Mattias E. Dahlstrom
  • Publication number: 20160049352
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: October 30, 2015
    Publication date: February 18, 2016
    Inventor: Mattias E. DAHLSTROM
  • Publication number: 20150243529
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Application
    Filed: May 14, 2015
    Publication date: August 27, 2015
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9059130
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: June 16, 2015
    Assignee: International Business Machines Corporation
    Inventor: Mattias E. Dahlstrom
  • Patent number: 9041195
    Abstract: A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: May 26, 2015
    Assignee: International Business Machines Corporation
    Inventor: Mattias E. Dahlstrom
  • Publication number: 20150056777
    Abstract: A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.
    Type: Application
    Filed: October 30, 2014
    Publication date: February 26, 2015
    Inventors: Mattias E. DAHLSTROM, Dinh DANG, Qizhi LIU, Ramana M. MALLADI