Patents by Inventor Maud Vinet

Maud Vinet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11329145
    Abstract: A quantum device with spin qubits, comprising: a semiconductor portion arranged on a buried dielectric layer of a semiconductor-on-insulator substrate also including a semiconductor support layer, wherein first distinct parts each form a confinement region of one of the qubits and are spaced apart from one another by a second part forming a coupling region between the confinement regions of the qubits; front gates each at least partially covering one of the first parts of the semiconductor portion; and wherein the support layer comprises a doped region a part of which is arranged in line with the second part of the semiconductor portion and is self-aligned with respect to the front gates, and forms a back gate controlling the coupling between the confinement regions of the qubits.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: May 10, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Louis Hutin, Xavier Jehl, Maud Vinet
  • Patent number: 11321626
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: May 3, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Maud Vinet
  • Publication number: 20220093501
    Abstract: A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.
    Type: Application
    Filed: September 20, 2021
    Publication date: March 24, 2022
    Inventors: Candice THOMAS, Jean CHARBONNIER, Perceval COUDRAIN, Maud VINET
  • Publication number: 20220093500
    Abstract: An integrated structure intended to connect a plurality of semiconductor devices, the integrated structure including a substrate, a first face and a second face, the first face being intended to receive the semiconductor devices, the integrated structure including, at the first face, at least one routing level, the routing level or levels including: at least one first conductor routing track in a conductor material; and at least one first superconductor routing track made from a superconductor material.
    Type: Application
    Filed: September 20, 2021
    Publication date: March 24, 2022
    Inventors: Candice THOMAS, Jean CHARBONNIER, Perceval COUDRAIN, Maud VINET
  • Patent number: 11264479
    Abstract: A method of production of a field-effect transistor from a stack of layers forming a semiconductor-on-insulator type substrate, the stack including a superficial layer of an initial thickness, made of a crystalline semiconductor material and covered with a protective layer, the method including: defining, by photolithography, a gate pattern in the protective layer; etching the gate pattern into the superficial layer to leave a thickness of the layer of semiconductor material in place, the thickness defining a height of a conduction channel of the field-effect transistor; forming a gate in the gate pattern; forming, in the superficial layer and on either side of the gate, source and drain zones, while preserving, in the zones, the initial thickness of the superficial layer.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: March 1, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Laurent Grenouillet, Maud Vinet, Romain Wacquez
  • Patent number: 11088259
    Abstract: A method of fabricating an electronic component with multiple quantum islands is provided, including supplying a substrate on which rests a nanowire made of semiconductor material not intentionally doped, the nanowire having at least two main control gates resting thereon so as to form respective qubits in the nanowire under the two main control gates, the two main control gates being separated by a groove, top and lateral faces of the two main control gates and a bottom of the groove being covered by a dielectric layer; depositing a conductive material in the groove and on the top of the two main control gates; and planarizing down to the dielectric layer on the top of the two main control gates, so as to obtain an element made of conductive material self-aligned between the main control gates.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: August 10, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Louis Hutin, Sylvain Barraud, Benoit Bertrand, Maud Vinet
  • Patent number: 11011425
    Abstract: A method of production of a 3D microelectronic device includes assembling a structure comprising a lower level with a component partially formed in a first semiconductor layer with a support provided with a second semiconductor layer in which a transistor channel of an upper level is capable of being produced, the second semiconductor layer being capped with a dielectric material layer capable of forming a gate dielectric, forming a capping layer arranged on the dielectric material layer, and potentially capable of forming a lower gate portion of the transistor, and defining a gate dielectric zone and an active zone of said transistor by etching the dielectric material layer and the second semiconductor layer, the capping layer protecting said dielectric material layer during this etching.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: May 18, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Perrine Batude, Francois Andrieu, Maud Vinet
  • Patent number: 10930562
    Abstract: A connection structure for microelectronic device with superposed semi-conductor layers including a conductor via that connects a lower face of an upper semi-conductor layer and an underlying conducting zone, the connection structure further including a silicide zone in contact with a lower face or with an inner face of the layer of the upper semi-conductor layer.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: February 23, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Claire Fenouillet-Beranger, Fabrice Nemouchi, Maud Vinet
  • Patent number: 10903349
    Abstract: An electronic component with multiple quantum islands is provided, including a substrate on which rests a nanowire made of semiconductor material not intentionally doped; two main control gates resting on the nanowire so as to form respective qubits in the nanowire, the two main control gates being separated by a groove, and bottom and lateral faces of the groove are covered by a dielectric layer; an element made of conductive material formed on the dielectric layer in the groove; a carrier reservoir that is offset with respect to the nanowire, the element made of the conductive material being separated from the carrier reservoir by another dielectric layer such that the element made of the conductive material is coupled to the carrier reservoir by field effect. A method of fabricating an electronic component with multiple quantum islands is also provided.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: January 26, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Louis Hutin, Sylvain Barraud, Benoit Bertrand, Maud Vinet
  • Publication number: 20200343435
    Abstract: A process for fabricating an electronic component incorporating double quantum dots and split gates includes providing a substrate surmounted with a stack of a semiconductor layer and of a dielectric layer that is formed above the semiconductor layer. The process also includes forming a mask on the dielectric layer and etching the dielectric layer and the semiconductor layer with the pattern of the mask, so as to form a stack of a semiconductor nanowire and of a dielectric hard mask. Finally, the process includes depositing a gate material on all the wafer and carrying out a planarization, until the dielectric hard mask is reached, so as to form first and second gates that are electrically insulated from each other on either side of said nanowire.
    Type: Application
    Filed: October 17, 2018
    Publication date: October 29, 2020
    Applicant: COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sylvain BARRAUD, Louis HUTIN, Maud VINET
  • Publication number: 20200226486
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Application
    Filed: June 27, 2018
    Publication date: July 16, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo BOURDET, Louis HUTIN, Yann-Michel NIQUET, Maud VINET
  • Patent number: 10679139
    Abstract: Quantum device comprising: a quantum component forming a qubit, formed in an active layer of a substrate and comprising: a confinement region; charge carrier reservoirs; a first front gate covering the confinement region; first lateral spacers arranged around the first gate and covering access regions; an FET transistor formed in the active layer, comprising channel, source and drain regions formed in the active layer, a second front gate covering the channel region, and second lateral spacers arranged around the second front gate and covering source and drain extension regions; and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: June 9, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Louis Hutin, Xavier Jehl, Maud Vinet
  • Patent number: 10651202
    Abstract: An integrated circuit is provided with several superimposed levels of transistors, the circuit including an upper level provided with transistors having a rear gate electrode laid out on a first semiconducting layer, and a second semiconducting layer, a first transistor among the transistors of the upper level being provided with a contact pad traversing the second semiconducting layer, the contact pad being connected to a connection zone disposed between the first semiconducting layer and the second semiconducting layer, the first transistor being polarised by and connected to at least one power supply line disposed on a side of a front face of the second semiconducting layer that is opposite to the rear face.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: May 12, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Andrieu, Perrine Batude, Maud Vinet
  • Patent number: 10607993
    Abstract: A quantum device with spin qubits, comprising: a first semiconducting layer comprising a first matrix of data qubits and measurement qubits connected to each other through tunnel barriers; means of addressing qubits configured for controlling conduction of each tunnel barrier by the field effect and comprising: first and second conducting portions arranged in first and second superposed metallisation levels respectively; first and second conducting vias each comprising a first end connected to one of the first and second conducting portions respectively, and a second end located facing one of the tunnel barriers; a first dielectric layer interposed between the tunnel barriers and the second ends of the first and second conducting vias.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: March 31, 2020
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Louis Hutin, Silvano De Franceschi, Tristan Meunier, Maud Vinet
  • Publication number: 20200035561
    Abstract: Production of a 3D microelectronic device including: assembling a structure comprising a lower level with a component partially formed in a first semiconductor layer with a support provided with a second semiconductor layer in which a transistor channel of an upper level is capable of being produced, the second semiconductor layer being capped with a dielectric material layer capable of forming a gate dielectric, forming a capping layer arranged on the dielectric material layer, and potentially capable of forming a lower gate portion of the transistor, defining a gate dielectric zone and an active zone of said transistor by etching the dielectric material layer and the second semiconductor layer, the capping layer protecting said dielectric material layer during this etching.
    Type: Application
    Filed: July 29, 2019
    Publication date: January 30, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Perrine BATUDE, Francois ANDRIEU, Maud VINET
  • Publication number: 20190371671
    Abstract: Connection structure for microelectronic device with superposed semi-conductor layers comprising a conductor via that connects a lower face of an upper semi-conductor layer and an underlying conducting zone, said connection structure further comprising a silicide zone in contact with a lower face or with an inner face of the layer of the upper semi-conductor layer.
    Type: Application
    Filed: May 24, 2019
    Publication date: December 5, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Claire FENOUILLET-BERANGER, Fabrice NEMOUCHI, Maud VINET
  • Publication number: 20190371926
    Abstract: An electronic component with multiple quantum islands is provided, including a substrate on which rests a nanowire made of semiconductor material not intentionally doped; two main control gates resting on the nanowire so as to form respective qubits in the nanowire, the two main control gates being separated by a groove, and bottom and lateral faces of the groove are covered by a dielectric layer; an element made of conductive material formed on the dielectric layer in the groove; a carrier reservoir that is offset with respect to the nanowire, the element made of the conductive material being separated from the carrier reservoir by another dielectric layer such that the element made of the conductive material is coupled to the carrier reservoir by field effect. A method of fabricating an electronic component with multiple quantum islands is also provided.
    Type: Application
    Filed: May 16, 2019
    Publication date: December 5, 2019
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Louis HUTIN, Sylvain BARRAUD, Benoit BERTRAND, Maud VINET
  • Publication number: 20190371908
    Abstract: A method of fabricating an electronic component with multiple quantum islands is provided, including supplying a substrate on which rests a nanowire made of semiconductor material not intentionally doped, the nanowire having at least two main control gates resting thereon so as to form respective qubits in the nanowire under the two main control gates, the two main control gates being separated by a groove, top and lateral faces of the two main control gates and a bottom of the groove being covered by a dielectric layer; depositing a conductive material in the groove and on the top of the two main control gates; and planarizing down to the dielectric layer on the top of the two main control gates, so as to obtain an element made of conductive material self-aligned between the main control gates.
    Type: Application
    Filed: May 16, 2019
    Publication date: December 5, 2019
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Louis HUTIN, Sylvain BARRAUD, Benoit BERTRAND, Maud VINET
  • Patent number: 10468436
    Abstract: A method of making a display device, the method including fabricating a matrix of light-emitting diodes (LEDs), each including electrodes accessible from a back face of the matrix and light-emitting surfaces accessible from a front face of the matrix; securing, onto the back face of the matrix, a stack of layers including at least one semiconducting layer, a gate dielectric layer, and a layer of gate conducting material; and starting from the stack of layers, fabricating an electronic control circuit electrically coupled to the electrodes, including fabricating field-effect transistors (FETs) including active zones and gates, the active zones being formed in the at least one semiconducting layer, and the gates being formed in the gate dielectric layer and in the layer of gate conducting material.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: November 5, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Ivan-Christophe Robin, Hubert Bono, Maud Vinet
  • Publication number: 20190266509
    Abstract: Quantum device comprising: a quantum component forming a qubit, formed in an active layer of a substrate and comprising: a confinement region; charge carrier reservoirs; a first front gate covering the confinement region; first lateral spacers arranged around the first gate and covering access regions; an FET transistor formed in the active layer, comprising channel, source and drain regions formed in the active layer, a second front gate covering the channel region, and second lateral spacers arranged around the second front gate and covering source and drain extension regions; and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.
    Type: Application
    Filed: February 25, 2019
    Publication date: August 29, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Louis HUTIN, Xavier Jehl, Maud Vinet