Patents by Inventor Mauro Kobrinsky

Mauro Kobrinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150270211
    Abstract: Interconnect structures including a selective via post disposed on a top surface of a lower level interconnect feature, and fabrication techniques to selectively form such a post. Following embodiments herein, a minimum interconnect line spacing may be maintained independent of registration error in a via opening. In embodiments, a selective via post has a bottom lateral dimension smaller than that of a via opening within which the post is disposed. Formation of a conductive via post may be preferential to a top surface of the lower interconnect feature exposed by the via opening. A subsequently deposited dielectric material backfills portions of a via opening extending beyond the interconnect feature where no conductive via post was formed. An upper level interconnect feature is landed on the selective via post to electrically interconnect with the lower level feature.
    Type: Application
    Filed: March 20, 2014
    Publication date: September 24, 2015
    Inventors: Mauro Kobrinsky, Tatyania Andryushchenko, Ramanan Chebiam, Hui Jae Yoo
  • Publication number: 20070284409
    Abstract: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
    Type: Application
    Filed: August 23, 2007
    Publication date: December 13, 2007
    Inventors: Mauro Kobrinsky, Shriram Ramanathan, Scott List
  • Publication number: 20070287263
    Abstract: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
    Type: Application
    Filed: August 23, 2007
    Publication date: December 13, 2007
    Inventors: Mauro Kobrinsky, Shriram Ramanathan, Scott (Richard) List
  • Publication number: 20070015340
    Abstract: Method and structure for optimizing and controlling diffusional creep at metal contact interfaces are disclosed. Embodiments of the invention accommodate height variations in adjacent contacts, decrease planarization uniformity requirements, and facilitate contact bonding at lower temperatures and pressures by employing shapes and materials that respond predictably to compressive interfacing loads.
    Type: Application
    Filed: September 18, 2006
    Publication date: January 18, 2007
    Inventors: Mauro Kobrinsky, R. List, Sarah Kim, Michael Harmes
  • Publication number: 20060292823
    Abstract: Embodiments of a method and apparatus for bonding wafers are disclosed. The bonded wafers may include self-passivating interconnects. Other embodiments are described and claimed.
    Type: Application
    Filed: June 28, 2005
    Publication date: December 28, 2006
    Inventors: Shriram Ramanathan, Mauro Kobrinsky
  • Publication number: 20060220197
    Abstract: A method of forming self-passivating interconnects. At least one of two mating bond structures is formed, at least in part, from an alloy of a first metal and a second metal (or other element). The second metal is capable of migrating through the first metal to free surfaces of the mating bond structures. During bonding, the two mating bond structures are bonded together to form an interconnect, and the second metal segregates to free surfaces of this interconnect to form a passivation layer. Other embodiments are described and claimed.
    Type: Application
    Filed: March 16, 2005
    Publication date: October 5, 2006
    Inventors: Mauro Kobrinsky, Jun He, Kevin O'Brien, Patrick Morrow, Ying Zhou, Shriram Ramanathan
  • Publication number: 20060003547
    Abstract: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
    Type: Application
    Filed: June 30, 2004
    Publication date: January 5, 2006
    Inventors: Mauro Kobrinsky, Shriram Ramanathan, Scott List
  • Publication number: 20060003548
    Abstract: The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
    Type: Application
    Filed: July 23, 2004
    Publication date: January 5, 2006
    Inventors: Mauro Kobrinsky, Shriram Ramanathan, Scott List
  • Publication number: 20050184400
    Abstract: Method and structure for optimizing and controlling diffusional creep at metal contact interfaces are disclosed. Embodiments of the invention accommodate height variations in adjacent contacts, decrease planarization uniformity requirements, and facilitate contact bonding at lower temperatures and pressures by employing shapes and materials that respond predictably to compressive interfacing loads.
    Type: Application
    Filed: February 7, 2005
    Publication date: August 25, 2005
    Inventors: Mauro Kobrinsky, R. List, Sarah Kim, Michael Harmes
  • Publication number: 20050170759
    Abstract: Method and structure for optimizing and controlling chemical mechanical planarization are disclosed. Embodiments of the invention include planarization techniques to make nonplanar surfaces comprising alternating metal and intermetal layers. Relative protrusion dimensions and uniformity of various layers may be accurately controlled using the disclosed techniques.
    Type: Application
    Filed: February 2, 2005
    Publication date: August 4, 2005
    Inventors: James Boardman, Sarah Kim, Paul Fischer, Mauro Kobrinsky
  • Publication number: 20050003650
    Abstract: Three-dimensional stacked substrate arrangements with reliable bonding and inter-substrate protection.
    Type: Application
    Filed: July 2, 2003
    Publication date: January 6, 2005
    Inventors: Shriram Ramanathan, Patrick Morrow, Scott List, Michael Chan, Mauro Kobrinsky, Sarah Kim, Kevin O'Brien, Michael Harmes, Thomas Marieb