Patents by Inventor Max G. Lagally

Max G. Lagally has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190013200
    Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
    Type: Application
    Filed: July 6, 2017
    Publication date: January 10, 2019
    Inventors: Max G. Lagally, Thomas Francis Kuech, Yingxin Guan, Shelley A. Scott, Abhishek Bhat, Xiaorui Cui
  • Patent number: 10176991
    Abstract: High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: January 8, 2019
    Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Max G. Lagally, Thomas Francis Kuech, Yingxin Guan, Shelley A. Scott, Abhishek Bhat, Xiaorui Cui
  • Patent number: 9472535
    Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: October 18, 2016
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, José Roberto Sänchez Pérez
  • Patent number: 9324804
    Abstract: Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: April 26, 2016
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Francesca Cavallo, Richard Rojas-Delgado
  • Patent number: 9181092
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: November 10, 2015
    Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATION
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Publication number: 20150270350
    Abstract: Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
    Type: Application
    Filed: March 21, 2014
    Publication date: September 24, 2015
    Inventors: Max G. Lagally, Francesca Cavallo, Richard Rojas-Delgado
  • Patent number: 9059335
    Abstract: Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: June 16, 2015
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Francesca Cavallo, Max G. Lagally, Richard Rojas-Delgado
  • Publication number: 20150129911
    Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, José Roberto Sánchez Pérez
  • Patent number: 9006785
    Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.
    Type: Grant
    Filed: January 28, 2013
    Date of Patent: April 14, 2015
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Jung-Hun Seo, Max G. Lagally
  • Publication number: 20140239201
    Abstract: Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.
    Type: Application
    Filed: February 27, 2013
    Publication date: August 28, 2014
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Francesca Cavallo, Max G. Lagally, Richard Rojas-Delgado
  • Patent number: 8803195
    Abstract: The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: August 12, 2014
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Shelley A. Scott, Donald E. Savage
  • Publication number: 20140209977
    Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.
    Type: Application
    Filed: January 28, 2013
    Publication date: July 31, 2014
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Jung-Hun Seo, Max G. Lagally
  • Patent number: 8698263
    Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: April 15, 2014
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan
  • Publication number: 20140024202
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Application
    Filed: July 18, 2013
    Publication date: January 23, 2014
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Patent number: 8536440
    Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: September 17, 2013
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Paul G. Evans, Clark S. Ritz
  • Publication number: 20130203236
    Abstract: Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 8, 2013
    Inventors: Max G. Lagally, Deborah M. Paskiewicz, Boy Tanto
  • Patent number: 8492245
    Abstract: Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: July 23, 2013
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, Deborah M. Paskiewicz, Boy Tanto
  • Patent number: 8416026
    Abstract: A nanoscale serpentine ribbon is used to produce electromagnetic radiation by accelerating charge carriers as constrained along a serpentine path defined by the ribbon so that curve portions of the ribbon promote acceleration-induced emission of electromagnetic radiation by the charge carriers.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: April 9, 2013
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Robert H. Blick, Max G. Lagally
  • Publication number: 20120273913
    Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
    Type: Application
    Filed: July 6, 2012
    Publication date: November 1, 2012
    Inventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan
  • Patent number: 8232617
    Abstract: Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: July 31, 2012
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Max G. Lagally, Hao-Chih Yuan