Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Abstract: The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.

Abstract: A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.

Abstract: Untethered micro or nanoscale probes may be dispersed within tissue to be individually addressed through external electromagnetic radiation to create local electrical currents used for direct stimulation, alteration of cellular potentials, or the release or modification of contained or attached chemical compounds.

Abstract: Methods for producing plasma-treated, functionalized inorganic oxide surfaces are provided. The methods include the steps of subjecting an oxide surface to a plasma to create hydroxyl functionalities on the surface and reacting the hydroxyl functionalities with epoxy group-containing molecules in situ in the absence of plasma. Biomolecules may be immobilized on the resulting functionalized surfaces. The methods may be used to treat a variety of oxide surfaces, including glass, quartz, silica and metal oxides.

Abstract: Methods for producing plasma-treated, functionalized inorganic oxide surfaces are provided. The methods include the steps of subjecting an oxide surface to a plasma to create hydroxyl functionalities on the surface and reacting the hydroxyl functionalities with epoxy group-containing molecules in situ in the absence of plasma. Biomolecules may be immobilized on the resulting functionalized surfaces. The methods may be used to treat a variety of oxide surfaces, including glass, quartz, silica and metal oxides.

Abstract: Carbon nanotube Schottky barrier photovoltaic cells and methods and apparatus for making the cells are provided. The photovoltaic cells include at least one contact made from a first contact material, at least one contact made from a second contact material and a plurality of photoconducting carbon nanotubes bridging the contacts. A Schottky barrier is formed at the interface between the first contact material and the carbon nanotubes while at the interface between the second contact material and the carbon nanotubes, a Schottky barrier for the opposite carrier is formed, or a small, or no Schottky barrier is formed. It is the Schottky barrier asymmetry that allows the photo-excited electron-hole pairs to escape from the carbon nanotube device.

Abstract: A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.

Abstract: Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

Abstract: The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Abstract: Devices and methods for depositing fluids on substrates in patterns of spots, lines, or other features use a nozzle, which is preferably configured similarly to a micropipette, having a piezoelectric crystal or other ultrasonic actuator coupled to one of its sides. The nozzle may be charged via capillary action by dipping it into a well containing the fluid to be deposited, and may then be positioned over a desired area of a substrate, at which point activation of the ultrasonic actuator at ultrasonic frequencies will eject the fluid onto the substrate. The needle may subsequently be dipped into a well of rinsing fluid for cleaning. Spots or lines on the order of 5 micrometers width may be generated, making the invention particularly suitable for use in biological applications such as microarray production and in microelectronics applications such as the printing of organic circuitry.

Abstract: Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a template layer, such as silicon, of a substrate having a sacrificial layer on which the template layer is formed. The grown layer has a lattice mismatch with the template layer so that it is strained as deposited. A top layer of crystalline material, such as silicon, is grown on the alloy layer to form a multilayer structure with the grown layer and the template layer. The sacrificial layer is preferentially etched away to release the multilayer structure from the sacrificial layer, relaxing the grown layer and straining the crystalline layers interfaced with it.

Abstract: Untethered micro or nanoscale probes may be dispersed within tissue to be individually addressed through external electromagnetic radiation to create local electrical currents used for direct stimulation, alteration of cellular potentials, or the release or modification of contained or attached chemical compounds.

Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic longitudinal modulation, which may be a compositional modulation or a strain-induced modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.

Abstract: This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Abstract: The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.

Abstract: Methods for producing plasma-treated, functionalized carbon-containing surfaces are provided. The methods include the steps of subjecting a carbon-containing substrate to a plasma to create surface active sites on the surface of the substrate and reacting the surface active sites with stable spacer molecules in the absence of plasma. Biomolecules may be immobilized on the resulting functionalized surfaces. The methods may be used to treat a variety of carbon-containing substrates, including polymeric surfaces, diamond-like carbon films and carbon nanotubes and nanoparticles.

Abstract: Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as silicon-germanium, is grown onto a template layer, such as silicon, of a substrate having a sacrificial layer on which the template layer is formed. The grown layer has a lattice mismatch with the template layer so that it is strained as deposited. A top layer of crystalline material, such as silicon, is grown on the alloy layer to form a multilayer structure with the grown layer and the template layer. The sacrificial layer is preferentially etched away to release the multilayer structure from the sacrificial layer, relaxing the grown layer and straining the crystalline layers interfaced with it.

Abstract: A method of forming a suspended semiconductor film is provided comprising providing a semiconductor structure including a layer of semiconductor film over a sacrificial layer, the semiconductor film secured to a substrate; depositing a film of material over the semiconductor film that has a tensile or compressive strain with respect to the semiconductor film patterning the deposited film to leave opposed segments spaced from each other by a central portion of the semiconductor film; patterning the semiconductor film and removing the sacrificial layer beneath the semiconductor film to leave a semiconductor film section anchored to the substrate at at least two anchor positions, with the film segments remaining on the semiconductor film adjacent to the anchor positions and spaced from each other by the central position of the suspended semiconductor film such that the film segments apply a tensile or compressive stress to the suspended semiconductor film.