Abstract: A class B microwave, push-pull, balanced amplifier and an amplifying element for use therein is disclosed. A field-effect transistor having at least two gates, two drains and a common source has, inter alia, a center-tapped output transformer connected across the drains. A branch including a DC voltage source connects the center-tap of the transformer and the common source of the field effect transistor. Parasitic loss mechanisms associated with the source contacts and leads are eliminated because the current in the branch connecting the source to the transformer is not at the signal frequency. The FET can comprise a semiconductor body having alternating drain and source electrodes with gate electrodes therebetween. Source electrodes are connected in common. Alternate drain electrodes are connected to one output terminal; the remaining drain electrodes are connected to the other output terminal.

Abstract: A method for fabricating superior ohmic contacts in a III-V semiconductor wafer by virtue of double donor (or double acceptor) impurity complex formation. A typical III-V, e.g., GaAs, semiconductor device is fabricated by depositing a thin Si.sub.3 N.sub.4 layer and then regions are opened, by photoresist methods, upon which ohmic contacts are to be made. New resist is applied over the wafer and the ohmic contact regions are again opened. Si ions are now implanted to form the active channel and the drain and source regions (in an FET device). The resist layer is removed, a layer of Ge is laid down and a layer of Se over the Ge. The Ge layer is coated with a layer of SiO.sub.2, Si.sub.3 N.sub.4 or a mixture of both, and annealed, causing the Ge and Se to diffuse rapidly into the Si ion implant region. The SiO.sub.2, Si.sub.3 N.sub.4 and excess surface Ge and Se is now removed.

Abstract: A spin stabilized, earth orbitting satellite having a phased array antenna capable of radiating a plurality of steered electromagnetic beams to predetermined earth locations. The antenna array extends around the satellite and is made up of individual elements which are energized through semiconductor diode devices by electron beams. The electron beams are controlled by fields having the same frequency as the spin frequency of the satellite.

Abstract: A method for making reproducible FET's with gate dimensions in the submiceter range, reduced source-gate channel resistance, and reduced gate and source contact resistances comprising forming, in order, on a semi-insulating substrate, of GaAs, an N-type GaAs layer, an (N+) GaAs layer and an (N++) Ge layer, using a photolith process with a mask to form the gate channel region therein, forming a refractory metal layer covering the whole top of the device, forming a gold layer on the refractory metal, using a photolith method with a common mask and etch process to cut the gate, source and drain electrodes to their desired sizes and using a plasma etch process to cut away, except for a stalk supporting the gate Au electrode, the remaining refractory metal from a portion of the gate channel lying between the gate and source electrode region and lying between the gate and drain electrode region.

Abstract: An array antenna capable of simultaneously radiating several microwave parns wherein the antenna elements are individually energized by p-n junction devices that are controlled by electron beams.

Abstract: Method and means for controlling the phase of an output signal comprising an electron beam device having traveling-wave-type deflection plates to which an input signal is fed, means controlling the velocity or position of the electron beam and p-n semiconductor diode means for amplifying the signal which modulates the electron beam which irradiates the diode, the phase of the output signal being related either to the velocity of the electron beam or its position on the semiconductor diode.

Abstract: The semiconductor target of a GEISHA or EBIC device is integrated with an jection laser diode to form a unitary structure. The electrons created in the GEISHA by impact ionization are swept directly into the injection laser to cause lasing action. This eliminates the need for transmission line connecting the GEISHA to the injection laser diode.