Abstract: An example system for maintaining the shape of a circuit board includes metal balls that are configured not to collapse in whole or part in response to a force below a predefined force and a temperature below a predefined temperature. The metal balls are configured to support a substrate and are part of electrical connections between the substrate and a circuit board. The system includes a fixture configured to apply force to the substrate while the substrate is subjected to the temperature. The fixture is configured to distribute the force across a surface of the substrate that is not in contact with the metal balls such that the force applied by the fixture and the support of the substrate by the metal balls maintains a shape of the substrate at the temperature.

Abstract: An example system for maintaining the shape of a circuit board includes metal balls that are configured not to collapse in whole or part in response to a force below a predefined force and a temperature below a predefined temperature. The metal balls are configured to support a substrate and are part of electrical connections between the substrate and a circuit board. The system includes a fixture configured to apply force to the substrate while the substrate is subjected to the temperature. The fixture is configured to distribute the force across a surface of the substrate that is not in contact with the metal balls such that the force applied by the fixture and the support of the substrate by the metal balls maintains a shape of the substrate at the temperature.

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.

Abstract: A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.