Patents by Inventor Max Zhang

Max Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200253041
    Abstract: An example system for maintaining the shape of a circuit board includes metal balls that are configured not to collapse in whole or part in response to a force below a predefined force and a temperature below a predefined temperature. The metal balls are configured to support a substrate and are part of electrical connections between the substrate and a circuit board. The system includes a fixture configured to apply force to the substrate while the substrate is subjected to the temperature. The fixture is configured to distribute the force across a surface of the substrate that is not in contact with the metal balls such that the force applied by the fixture and the support of the substrate by the metal balls maintains a shape of the substrate at the temperature.
    Type: Application
    Filed: February 26, 2019
    Publication date: August 6, 2020
    Inventors: Heng-Kit Too, Xue-Bin Tan, Max Zhang, Rocky Tao, Brian Brecht, Iris Weng, Hale Deng
  • Patent number: 10147762
    Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: December 4, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • Patent number: 10096651
    Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: October 9, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang
  • Patent number: 10074695
    Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: September 11, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Stanley Williams, Max Zhang, Zhiyong Li
  • Patent number: 9885937
    Abstract: A dynamic optical crossbar array includes a first set of parallel transparent electrode lines, a bottom set of parallel electrode lines that cross said transparent electrode lines, and an optically variable material disposed between said first set of transparent electrode lines and said bottom set of electrode lines.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: February 6, 2018
    Assignee: Hewlett Packard Enerprise Development LP
    Inventors: Jianhua Yang, Alexandre M. Bratkovski, David A. Fattal, Minxian Max Zhang
  • Patent number: 9793473
    Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: October 17, 2017
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
  • Publication number: 20170271409
    Abstract: A resistive memory device includes a first electrode, a memristor coupled in electrical series with the first electrode, a second electrode coupled in electrical series with the memristor, a selector coupled in electrical series with the second electrode, and a third electrode coupled in electrical series with the selector. The memristor includes oxygen or nitrogen elements. The selector includes a composite dielectric material of a first dielectric material, a second dielectric material that is different from the first dielectric material, and a dopant material including a cation having a migration rate faster than the oxygen or the nitrogen elements of the memristor. The first dielectric material and the second dielectric material are present in a ratio ranging from 1:9 to 9:1, and a concentration of the dopant material in the composite dielectric material ranges from about 1% up to 50%.
    Type: Application
    Filed: January 29, 2015
    Publication date: September 21, 2017
    Inventors: Jianhua Yang, Ning Ge, Katy Samuels, Minxian Max Zhang
  • Publication number: 20170271589
    Abstract: A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a negative differential resistance selector that is in series with a memristor switching material at a junction formed at a cross-point between two conductors of one of the plurality of resistive memory devices.
    Type: Application
    Filed: January 26, 2015
    Publication date: September 21, 2017
    Inventors: Minxian Max Zhang, Jianhua Yang, Zhiyong Li, R. Stanley Williams
  • Publication number: 20170271410
    Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.
    Type: Application
    Filed: February 11, 2015
    Publication date: September 21, 2017
    Inventors: Minxian Max Zhang, Kathryn Samuels, Jianhua Joshua Yang, R. Stanley Williams, Zhiyong Li
  • Publication number: 20170243924
    Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.
    Type: Application
    Filed: December 19, 2014
    Publication date: August 24, 2017
    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
    Inventors: Jianhua YANG, Stanley WILLIAMS, Max ZHANG, Zhiyong LI
  • Publication number: 20170141160
    Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.
    Type: Application
    Filed: June 26, 2014
    Publication date: May 18, 2017
    Inventors: Minxian Max ZHANG, Jianhua YANG, R. Stanley WILLIAMS
  • Patent number: 9558869
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 31, 2017
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Publication number: 20160218285
    Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
    Type: Application
    Filed: September 5, 2013
    Publication date: July 28, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
  • Patent number: 9331278
    Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: May 3, 2016
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li, Minxian Max Zhang
  • Publication number: 20160043312
    Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.
    Type: Application
    Filed: March 13, 2013
    Publication date: February 11, 2016
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 9257645
    Abstract: A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: February 9, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, Feng Miao
  • Publication number: 20160028005
    Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
    Type: Application
    Filed: September 30, 2015
    Publication date: January 28, 2016
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • Publication number: 20150380133
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Patent number: 9224949
    Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: December 29, 2015
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Patent number: 9224821
    Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: December 29, 2015
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Minxian Max Zhang, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams