Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.

Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.

Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.

Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.

Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.

Abstract: A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.

Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.

Abstract: A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.

Abstract: A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.

Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.

Abstract: A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.

Abstract: A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.

Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.

Abstract: An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.

Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.

Abstract: A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.

Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.

Abstract: A dynamic optical crossbar array includes a first set of parallel transparent electrode lines, a bottom set of parallel electrode lines that cross said transparent electrode lines, and an optically variable material disposed between said first set of transparent electrode lines and said bottom set of electrode lines.

Abstract: A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.

Abstract: In one example, an oxide-based negative differential resistance comparator circuit includes a composite NDR device that includes a first electrode, a first thin film oxide-based negative differential resistance (NDR) layer in contact with the first electrode and a central conductive portion. The composite NDR device also includes a second thin film oxide-based NDR layer disposed adjacent to the first NDR layer and a second electrode. A resistor may be placed in series with the composite NDR device and an electrical energy source can apply applying a voltage across the first electrode and second electrode. The composite NDR device produces a threshold based comparator functionality in the comparator circuit.