Patents by Inventor Maxim S. Shatalov
Maxim S. Shatalov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12125940Abstract: A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.Type: GrantFiled: July 12, 2021Date of Patent: October 22, 2024Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky
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Publication number: 20240266160Abstract: Systems for providing a gas sample from a physical vapor transport system include a sampling tube with a first end connected to a crucible retort of the physical vapor transport system to sample a gas phase. The systems include a heater around at least a part of the sampling tube to maintain a temperature within the sampling tube. The sampling tube is integrated with an orifice and a skimmer with a skimmer divergent nozzle. An output of the skimmer is connected to a gas analyzer. An output of the sampling tube is connected to a differential pumping port.Type: ApplicationFiled: February 2, 2024Publication date: August 8, 2024Inventor: Maxim S. Shatalov
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Publication number: 20240113251Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.Type: ApplicationFiled: November 27, 2023Publication date: April 4, 2024Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Patent number: 11945735Abstract: A solution for irradiating a flowing fluid through a channel with ultraviolet radiation is provided. Ultraviolet radiation sources can be located within the channel in order to direct ultraviolet radiation towards the flowing fluid and/or the interior of the channel. A valve can be located adjacent to the channel to control the flow rate of the fluid. A control system can control and adjust the ultraviolet radiation based on the flow rate of the fluid and a user input component can receive a user input for the control system to adjust the ultraviolet radiation. The ultraviolet radiation sources, the control system, the user input component, and any other components that require electricity can receive power from a rechargeable power supply. An electrical generator located within the channel can convert energy from the fluid flowing through the channel into electricity for charging the rechargeable power supply.Type: GrantFiled: November 15, 2021Date of Patent: April 2, 2024Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky
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Publication number: 20240093354Abstract: A system for processing powder includes a process tube connected to load lock chamber via a vacuum valve. The load lock chamber includes first and second stations. Each of the first and second stations is configured to receive a barrel containing powder to be treated. A mechanical transfer mechanism is configured to: move a barrel containing powder to be treated from the first station into the process tube; move a barrel containing powder to be treated from the second station into the process tube; move a barrel containing treated powder from the process tube to the first station; and move a barrel containing treated powder from the process tube to the second station.Type: ApplicationFiled: September 18, 2023Publication date: March 21, 2024Inventors: Maxim S. Shatalov, Paul J. Decker, Samuel J. Wright, William S. Linss
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Patent number: 11925153Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.Type: GrantFiled: February 11, 2022Date of Patent: March 12, 2024Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov, Arthur Peter Barber, III
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Publication number: 20230416095Abstract: Methods permit the growth of two or more nanomaterials in a common process chamber in the same batch run, either simultaneously or sequentially, using one or a combination of CVD, CVI, or other techniques. The methods described can be beneficial for forming nanosilicon-containing nanocarbon structures suitable for use as a battery anode material.Type: ApplicationFiled: June 20, 2023Publication date: December 28, 2023Inventors: Maxim S. Shatalov, Samuel J. Wright, Mikhail Gaevski
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Patent number: 11830963Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.Type: GrantFiled: February 9, 2022Date of Patent: November 28, 2023Assignee: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Patent number: 11791438Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.Type: GrantFiled: March 11, 2021Date of Patent: October 17, 2023Assignee: Sensor Electronic Technology, Inc.Inventors: Mikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
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Patent number: 11751310Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.Type: GrantFiled: December 16, 2020Date of Patent: September 5, 2023Assignee: Sensor Electronic Technology, Inc.Inventors: Arthur Peter Barber, III, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Robert M. Kennedy
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Patent number: 11611011Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.Type: GrantFiled: October 1, 2020Date of Patent: March 21, 2023Assignee: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Patent number: 11508871Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.Type: GrantFiled: October 1, 2020Date of Patent: November 22, 2022Assignee: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Patent number: 11375595Abstract: An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.Type: GrantFiled: October 7, 2019Date of Patent: June 28, 2022Assignee: Sensor Electronic Technology, Inc.Inventors: Arthur Peter Barber, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Robert M. Kennedy
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Publication number: 20220159912Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.Type: ApplicationFiled: February 11, 2022Publication date: May 26, 2022Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov, Arthur Peter Barber, III
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Publication number: 20220165909Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.Type: ApplicationFiled: February 9, 2022Publication date: May 26, 2022Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Publication number: 20220165910Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.Type: ApplicationFiled: February 9, 2022Publication date: May 26, 2022Applicant: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
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Publication number: 20220118148Abstract: A light fixture includes a housing forming a cavity to permit airflow therethrough. A filter is disposed within the airflow of the cavity. An ultraviolet light emitting diode is disposed within the cavity and is directed to concurrently treat the airflow and the filter to destroy biomaterial therein.Type: ApplicationFiled: October 19, 2021Publication date: April 21, 2022Inventors: Maxim S. Shatalov, Michael Handerhan
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Publication number: 20220073377Abstract: A solution for irradiating a flowing fluid through a channel with ultraviolet radiation is provided. Ultraviolet radiation sources can be located within the channel in order to direct ultraviolet radiation towards the flowing fluid and/or the interior of the channel. A valve can be located adjacent to the channel to control the flow rate of the fluid. A control system can control and adjust the ultraviolet radiation based on the flow rate of the fluid and a user input component can receive a user input for the control system to adjust the ultraviolet radiation. The ultraviolet radiation sources, the control system, the user input component, and any other components that require electricity can receive power from a rechargeable power supply. An electrical generator located within the channel can convert energy from the fluid flowing through the channel into electricity for charging the rechargeable power supply.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky
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Publication number: 20220061228Abstract: A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet and/or blue-ultraviolet radiation to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.Type: ApplicationFiled: November 9, 2021Publication date: March 3, 2022Applicant: Sensor Electronic Technology, Inc.,Inventors: Arthur Peter Barber, III, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
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Patent number: RE48943Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.Type: GrantFiled: March 10, 2020Date of Patent: February 22, 2022Assignee: SENSOR ELECTRONIC TECHNOLOGY, INC.Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska